AO4302
30V N-Channel MOSFET
30
36
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 23A
R
DS(ON)
(at V
GS
=10V) < 4mΩ
R
DS(ON)
(at V
GS
= 4.5V) < 5mΩ
ESD Protected
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
Drain-Source Voltage
30
The AO4302 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
G
D
S
SOIC-8
Top View Bottom View
D
D
DD
S
SSG
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
2.3
T
A
=70°C
Junction and Storage Temperature Range -55 to 150 °C
Power Dissipation
B
P
D
T
A
=25°C W
3.6
Thermal Characteristics UnitsParameter Typ Max
V±20Gate-Source Voltage
Drain-Source Voltage
30
V
mJ120 A49
T
A
=25°C
T
A
=70°C
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
Avalanche Current
C
A
I
D
23
18
316
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
11 65
15
°C/W
R
θJA
27
52 35
G
D
S
SOIC-8
Top View Bottom View
D
D
DD
S
S
S
G
Rev 0: February 2011
www.aosmd.com Page 1 of 6
AO4302
Symbol Min Typ Max Units
BV
DSS
30 36 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±10
V
GS(th)
Gate Threshold Voltage 1.3 1.8 2.3 V
I
D(ON)
316 A
3.2 4.0
T
J
=125°C 4.8 6.0
3.9 5.0 mΩ
g
FS
120 S
V
SD
0.7 1 V
I
S
5 A
C
iss
2310 2891 3470 pF
C
oss
330 474 620 pF
C
rss
150 256 360 pF
R
g
0.7 1.6 2.4 Ω
Q
g
(10V) 41 51.9 63 nC
Q
g
(4.5V) 19 24.8 30 nC
Q
gs
7.5 nC
Q
gd
10.9 nC
t
D(on)
7.0 ns
t
4.8
ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
=10V, V
=15V, R
=0.75
Ω
,
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=18A
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
Zero Gate Voltage Drain Current µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Gate-Body leakage current
Forward Transconductance
Gate Drain Charge
Total Gate Charge
t
r
4.8
ns
t
D(off)
41.5 ns
t
f
8.8 ns
t
rr
11 13.8 17 ns
Q
rr
24 30.8 37 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: February 2011 www.aosmd.com Page 2 of 6
AO4302
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
6
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=18A
VGS=10V
ID=20A
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3V
10V
4.5V
0
10
20
30
40
50
60
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
0
1
2
3
4
5
6
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=18A
VGS=10V
ID=20A
0
2
4
6
8
10
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
ID=20A
25°C
125
°
C
0
10
20
30
40
50
60
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3V
10V
4.5V
Rev 0: February 2011 www.aosmd.com Page 3 of 6
AO4302
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=20A
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
100ms
10ms
1.0
10.0
100.0
1000.0
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
0
2
4
6
8
10
0 10 20 30 40 50 60
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=15V
ID=20A
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
100ms
10ms
1.0
10.0
100.0
1000.0
1 10 100 1000
IAR (A) Peak Avalanche Current
Time in avalanche, tA(µ
µµ
µs)
Figure 9: Single Pulse Avalanche capability (Note C)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
Rev 0: February 2011 www.aosmd.com Page 4 of 6
AO4302
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
Rev 0: February 2011 www.aosmd.com Page 5 of 6
AO4302
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vgs
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 0: February 2011 www.aosmd.com Page 6 of 6
