BFR93AWTR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1992

File under Discrete Semiconductors, SC14

1995 Sep 18

DISCRETE SEMICONDUCTORS

BFR93AW

NPN 5 GHz wideband transistor

1995 Sep 18 2

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

FEATURES

•High power gain

•Gold metallization ensures

excellent reliability

•SOT323 (S-mini) package.

APPLICATIONS

It is designed for use in RF amplifiers,

mixers and oscillators with signal

frequencies up to 1 GHz.

DESCRIPTION

Silicon NPN transistor encapsulated

in a plastic SOT323 (S-mini) package.

The BFR93AW uses the same crystal

as the SOT23 version, BFR93A.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Marking code: R2.

Fig.1 SOT323

handbook, 2 columns

MBC870

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−15 V

VCEO collector-emitter voltage open base −−12 V

ICcollector current (DC) −−35 mA

Ptot total power dissipation up to Ts=93°C; note 1 −−300 mW

hFE DC current gain IC= 30 mA; VCE =5V 40 90 −

re feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz;

Tamb =25°C−0.6 −pF

fTtransition frequency IC= 30 mA; VCE = 5 V; f = 500 MHz 4 5 −GHz

GUM maximum unilateral power

gain IC= 30 mA; VCE = 8 V; f = 1 GHz;

Tamb =25°C−13 −dB

IC= 30 mA; VCE = 8 V; f = 2 GHz;

Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE = 8 V; f = 1 GHz;

Γs=Γopt

−1.5 −dB

Tjjunction temperature −−150 °C

1995 Sep 18 3

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITION MIN. MAX. UNIT

VCBO collector-base voltage open emitter −15 V

VCEO collector-emitter voltage open base −12 V

VEBO emitter-base voltage open collector −2V

Ccollector current (DC) −35 mA

Ptot total power dissipation up to Ts=93°C; see Fig.2; note 1 −300 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Fig.2 Power derating curve.

0 50 100 200

200

MLB540

150T ( C)

Ptot

(mW)

300

400

100

THERMAL CHARACTERISTICS

Note to the Limiting values and Thermal characteristics

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITION VALUE UNIT

Rth j-s thermal resistance from junction to

soldering point up to Ts=93°C; note 1 190 K/W

1995 Sep 18 4

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

CHARACTERISTICS

Tj=25°C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero and

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector leakage current IE= 0; VCB =5V −−50 nA

hFE DC current gain IC= 30 mA; VCE = 5 V 40 90 −

Cccollector capacitance IE=i

e= 0; VCB = 5 V; f = 1 MHz −0.7 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V;

f = 1 MHz −2.3 −pF

Cre feedback capacitance IC= 0; VCE = 5 V; f = 1 MHz −0.6 −pF

fTtransition frequency IC= 30 mA; VCE =5V;

f = 500 MHz 45−GHz

GUM maximum unilateral power

gain; note 1 IC= 30 mA; VCE =8V;

f = 1 GHz; Tamb =25°C−13 −dB

IC= 30 mA; VCE =8V;

f = 2 GHz; Tamb =25°C−8−dB

F noise ﬁgure IC= 5 mA; VCE =8V;

f = 1 GHz; Γs=Γopt

−1.5 −dB

IC= 5 mA; VCE =8V;

f = 2 GHz; Γs=Γopt

−2.1 −dB

GUM 10 s21 2

11 2

–()1s

22 2

–()

------------------------------------------------------------ dB.log=

1995 Sep 18 5

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.3 DC current gain as a function of collector

current; typical values.

VCE =5V.

handbook, halfpage

0102030

120

MCD087

hFE

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

IC= 0; f = 1 MHz.

MBG203

(pF)

0.8

0.6

0.4

0.2

12 16

VCB (V)

Fig.5 Transition frequency as a function

of collector current; typical values.

VCE = 5 V; f = 500 MHz; Tamb =25°C.

MBG204

102

101

(GHz)

IC (mA)

1995 Sep 18 6

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.6 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 500 MHz.

010 20

MBG202

GUM

MSG

IC (mA)

gain

(dB)

Fig.7 Gain as a function of collector current;

typical values.

VCE = 8 V; f = 1 GHz.

010 20

MBG201

MSG

GUM

gain

(dB)

IC (mA)

Fig.8 Gain as a function of frequency;

typical values.

VCE = 8 V; IC= 10 mA.

handbook, halfpage

010

MBG200

102103104

f (MHz)

GUM

Gmax

MSG

gain

(dB)

Fig.9 Gain as a function of frequency;

typical values.

VCE = 8 V; IC=30mA.

handbook, halfpage

010

MGB207

102103104

f (MHz)

GUM

Gmax

MSG

gain

(dB)

1995 Sep 18 7

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.10 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

010

MGC901

101

1 GHz

500 MHz

f = 2 GHz

(dB)

IC (mA)

Fig.11 Minimum noise figure as a function of

collector current; typical values.

VCE =8V.

handbook, halfpage

MGC900

f (MHz) 104

103

102

IC = 30 mA

10 mA

5 mA

(dB)

Fig.12 Common emitter noise figure circles; typical values.

f = 500 MHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

handbook, full pagewidth

MGC879

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o0.5

0.2

0.5

F = 4 dB

F = 3 dB

F = 2 dB

opt

F = 1.4 dB

min

0.2

1 5

180 0.2 0.5

1995 Sep 18 8

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.13 Common emitter noise figure circles; typical values.

f = 1 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

handbook, full pagewidth

MGC880

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.50.2

0.2

F = 2.5 dB

F = 3 dB

F = 4 dB

0.2

opt

F = 2 dB

min

0G = 13 dB

G = 13.8 dB

max

G = 12 dB

G = 11 dB

f = 2 GHz; VCE = 8 V; IC= 10 mA; Zo=50Ω.

Fig.14 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MGC881

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

21 5

180o

0.5

0.2

0.2 (4)

(3)

(2)

(5)

(6)

(7) (8)

(1)

0.2

00.5

(1) Γopt; Fmin = 3 dB.

(2) F = 3.5 dB.

(3) F = 4 dB.

(4) F = 5 dB.

(5) Γms;G

max = 8.1 dB.

(6) G = 7 dB.

(7) G = 6 dB.

(8) G = 5 dB.

1995 Sep 18 9

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.15 Common emitter input reflection coefficient (s11); typical values.

VCE = 8 V; IC= 30 mA; Zo=50Ω.

handbook, full pagewidth

MGC878

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

VCE = 8 V; IC= 30 mA.

Fig.16 Common emitter forward transmission coefficient (s21); typical values.

handbook, full pagewidth

MGC898

90o

135o

180o

90o

50 40 30 20 10

45o

135o45o

40 MHz 3 GHz

1995 Sep 18 10

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

Fig.17 Common emitter reverse transmission coefficient (s12); typical values.

VCE = 8 V; IC= 30 mA.

handbook, full pagewidth

MGC899

90o

135o

180o

90o

0.5 0.4 0.3 0.2 0.1

45o

135o45o

40 MHz

3 GHz

VCE = 8 V; IC= 30 mA; Zo=50Ω.

Fig.18 Common emitter output reflection coefficient (s22); typical values.

handbook, full pagewidth

MGC877

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

1995 Sep 18 11

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

PACKAGE OUTLINE

Dimensions in mm.

Fig.19 SOT323.

handbook, full pagewidth

0.25

0.10

0.2

0.2 A

0.65

1.3

2.2

1.8

0.40

0.30

1.35

1.15

2.2

2.0

detail X

1.1

max

0.1

0.0

1.0

0.8

0.3

0.1

0.2

MBC871

1995 Sep 18 12

Philips Semiconductors Product speciﬁcation

NPN 5 GHz wideband transistor BFR93AW

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.