IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
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Thank you for your cooperation and understanding,
WeEn Semiconductors
Philips Semiconductors Product specification
Thyristors BT145 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT145- 500R 600R 800R
bidirectional blocking voltage VDRM, Repetitive peak off-state 500 600 800 V
capability and high thermal cycling VRRM voltages
performance. Typical applications IT(AV) Average on-state current 16 16 16 A
include motor control, industrial and IT(RMS) RMS on-state current 25 25 25 A
domestic lighting, heating and static ITSM Non-repetitive peak on-state 300 300 300 A
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state - 50016001800 V
voltages
IT(AV) Average on-state current half sine wave; Tmb ≤ 101 ˚C - 16 A
IT(RMS) RMS on-state current all conduction angles - 25 A
ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 300 A
t = 8.3 ms - 330 A
I2tI
2
t for fusing t = 10 ms - 450 A2s
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
IGM Peak gate current - 5 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power - 20 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT145 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance - - 1.0 K/W
junction to mounting base
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current VD = 12 V; IT = 0.1 A - 5 35 mA
ILLatching current VD = 12 V; IGT = 0.1 A - 25 80 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 20 60 mA
VTOn-state voltage IT = 30 A - 1.1 1.5 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.0 V
VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, IROff-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.2 1.0 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; 200 500 - V/µs
off-state voltage exponential waveform; gate open circuit
tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
tqCircuit commutated VD = 67% VDRM(max); Tj = 125 ˚C; - 70 - µs
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs
October 1997 2 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT145 series
Fig.1. Maximum on-state dissipation, P
tot
, versus
average on-state current, I
T(AV)
, where a = form
factor = I
T(RMS)
/ I
T(AV)
.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
10ms.
Fig.3. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
101˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20
0
5
10
15
20
25 a = 1.57
1.9
2.2
2.8
4
BT145
IF(AV) / A
Ptot / W Tmb(max) / C
125
120
115
110
105
100
conduction
angle form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1 10 100 1000
0
50
100
150
200
250
300
350 BT145
Number of half cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
1000
10000 BT145
ITSM / A
10us 100us 1ms 10ms
100
T / s
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50 BT145
surge duration / s
IT(RMS) / A
-50 0 50 100 150
0
5
10
15
20
25
30 BT145
Tmb / C
IT(RMS) / A
101 C
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT151
Tj / C
VGT(Tj)
VGT(25 C)
October 1997 3 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT145 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D
/dt versus junction temperature T
j
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2
0
10
20
30
40
50
typ max
BT145
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.045 V
Rs = 0.011 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BT145
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT145
Tj / C
IH(Tj)
IH(25 C)
0 50 100 150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
gate open circuit
October 1997 4 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT145 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x) 123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1997 5 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT145 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997 6 Rev 1.200
