D D3PAK G APT4016SN S 400V 31.0A 0.16 POWER MOS IV (R) N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT4016SN UNIT 400 Volts 31 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 360 Watts Linear Derating Factor 2.9 W/C VGSM PD TJ,TSTG TL 124 Volts -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 400 Volts 31 Amps On State Drain Current 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID [Cont.]) MAX 0.16 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 THERMAL CHARACTERISTICS Symbol Characteristic RJC Junction to Case RJA Junction to Ambient MIN TYP 0.34 40 C/W USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-4055 Rev B CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol APT4016SN Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 2850 3500 Coss Output Capacitance VDS = 25V 690 900 Crss Reverse Transfer Capacitance f = 1 MHz 280 400 Qg Total Gate Charge Qgs 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 130 200 VDD = 0.5 VDSS 20 30 ID = ID [Cont.] @ 25C 60 90 30 Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf VGS = 15V 15 VDD = 0.5 VDSS 42 84 ID = ID [Cont.] @ 25C 90 135 RG = 1.8 65 130 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol IS ISM MIN 31 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) 350 700 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) 4.5 9 C TYP MAX UNIT 124 SAFE OPERATING AREA CHARACTERISTICS Characteristic Symbol Test Conditions MIN SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 360 SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 360 ILM 124 Inductive Current Clamped 1 Repetitive Rating: Pulse width limited by maximum junction Watts Amps 3 See MIL-STD-750 Method 3471 temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.01 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-4055 Rev B 0.5 t1 0.01 t2 0.005 SINGLE PULSE 0.001 10-5 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT4016SN 30 VGS=10V 6.5V 24 6V 18 12 5.5V 6 5V VGS=10V ID, DRAIN CURRENT (AMPERES) 6.5V 24 6V 18 12 5.5V 6 5V 4.5V 4.5V 0 0 24 VDS> ID (ON) x RDS (ON)MAX. 500SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = +25C TJ = +125C 18 12 6 TJ = +125C TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 32 24 16 8 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 2.50 TJ = 25C 2SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] 2.00 GS 1.50 VGS=10V 1.00 0.50 D VGS=20V 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55C BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 30 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-4055 Rev B ID, DRAIN CURRENT (AMPERES) 30 APT4016SN 10,000 10S 100 OPERATION HERE LIMITED BY RDS (ON) 5,000 10mS 100mS 1 DC TC =+25C TJ =+150C SINGLE PULSE .1 I = I [Cont.] D VDS=80V VDS=200V 12 VDS=320V 8 4 0 1,000 500 Crss .01 .05 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 16 Coss 100 1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 1mS 10 D Ciss 100S IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 200 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 50 TJ =+150C TJ =+25C 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 3 Drain (Heat Sink) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 11.51 (.453) 11.61 (.457) Revised 4/18/95 0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 050-4055 Rev B 13.41 (.528) 13.51 (.532) Source Drain Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated