APT4016SN - Advanced Power Technology

APT4016SN 400V 31.0A 0.16Ω

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

POWER MOS IV

050-4055 Rev B

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

VDSS

IDM

VGS

VGSM

TJ,TSTG

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

PAK

APT4016SN

400

124

±30

±40

360

2.9

-55 to 150

300

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)

Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BVDSS

ID(ON)

RDS(ON)

IDSS

IGSS

VGS(TH)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN TYP MAX

400

31 0.16

250

1000

±100

THERMAL CHARACTERISTICS

Symbol

RθJC

RθJA

MIN TYP MAX

0.34

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 5792 15 15 FAX: (33) 5 56 47 97 61

Symbol

ISM

VSD

t rr

Q rr

DYNAMIC CHARACTERISTICS

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

MIN TYP MAX

2850 3500

690 900

280 400

130 200

20 30

60 90

15 30

42 84

90 135

65 130

UNIT

APT4016SN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

050-4055 Rev B

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

µC

MIN TYP MAX

124

1.3

350 700

4.5 9

MIN TYP MAX

360

124

Test Conditions

VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.

IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

Symbol

SOA1

SOA2

ILM

Characteristic

Safe Operating Area

Inductive Current Clamped

UNIT

Watts

Amps

SAFE OPERATING AREA CHARACTERISTICS

1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471

temperature.

2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.1

0.05

0.01

0.005

0.001

ZθJC, THERMAL IMPEDANCE (°C/W)

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 4080120160200 0123456

0 2 4 6 8 10 0 20 40 60 80 100

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT4016SN

ID = 0.5 ID [Cont.]

VGS = 10V

2.5

2.0

1.5

1.0

0.5

0.0

TJ = 25°C

2µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

VGS = 10V @ 0.5 ID [Cont.]

VGS=10V

VGS=20V

TJ = -55°CTJ = +25°C

TJ = +125°C

TJ = +25°CTJ = -55°C

VGS=10V

6.5V

5.5V

4.5V

5.5V

4.5V

6.5V

VGS=10V 30

2.50

2.00

1.50

1.00

0.50

1.2

1.1

1.0

0.9

0.8

0.7

1.4

1.2

1.0

0.8

0.6

0.4

VDS> ID (ON) x RDS (ON)MAX.

500µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

050-4055 Rev B

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

1 5 10 50 100 400 .01 .05 .1 .5 1 5 10 50

0 40 80 120 160 200 0 0.5 1.0 1.5 2.0 2.5 3.0

APT4016SN

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

ID = ID [Cont.]

10,000

5,000

1,000

500

100

200

100

Ciss

Coss

Crss

TJ =+150°CT

=+25°C

VDS=80V

VDS=320V

VDS=200V

OPERATION HERE

LIMITED BY RDS (ON)

10µS

100µS

1mS

10mS

100mS

050-4055 Rev B

D3PAK Package Outline

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052) 5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Drain

(Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

1.04 (.041)

1.15 (.045)

Revised

4/18/95