127
■Silicon MOS FETs
●For Small Signal
∆: Tentative ❇: 2.5 V Drive
FETs, IPD, IGBTs, GaAs MMICs
Application Struc-
ture Part No.
Absolute Maximum Ratings (T
a
= 25 °C)
Electrical Characteristics (Ta = 25 °C)
Package
VDS
✽VDSS
(V)
VGSO
(V)
ID
(A)
PD
(mW)
|Yfs|
min.
✽typ.
(mS)
RDS(on)
max.
✽typ.
(Ω)
ton
max.
✽typ.
(ns)
toff
max.
✽typ.
(ns)
No.
Digital/
analog
switching
N-ch 2SK0601
(2SK601)
80 20 0.5
1 000
✽300 ✽2✽15 ✽20
MiniP3-F1 D34
2SK0614
(2SK614) 750 TO-92-A1 D56
2SK0615
(2SK615) 1 000 M-A1 D65
2SK0655
(2SK655)
50
80.1
200
20
50
10 20
NS-A1/NS-B1 D61/
D62
2SK0656
(2SK656) 1 000 1 000
2SK0657
(2SK657) 400
10 20
M-A1 D65
2SK0664
(2SK664)
150
SMini3-G1 D17
2SK0665
(2SK665) 20 40 1 000 1 000
2SK1228
❇
50
10 0.05 ✽39 ✽27 2 000 2 000 Mini3-G1 D26
2SK1374
❇
SMini3-G1 D17
2SK3539
± 7 0.1 20 ✽8✽200 ✽200∆2SK3546J SSMini3-F1 D8
∆2SK3547 SSSMini3-F1 D5
2SK2211 30
± 20
1 1 000 500 ✽0.48 ✽12 ✽160 MiniP3-F1 D34
2SK3064 ✽30 0.1 150 15
30
✽✽
150 ✽35 SMini3-G1 D17
P-ch 2SJ0536 ✽–30 – 0.1 8
50
✽✽
100 ✽25
Note) In the tables, part numbers show the Matsushita unified part numbers. And the part numbers in parentheses show the conventional ones.
