Utility microSD L500650 Rev. GV Utility microSD Engineering Specification Document Number: L500650 Revision: GV (c) 2020 | Delkin Devices Inc. 1 Utility microSD L500650 Rev. GV Overview Capacity 4GB up to 128GB Bus Speed Mode 4GB~128GB: UHS-I Flash Interface Flash Type: MLC Power ConsumptionNote1 Power Up Current < 250uA Standby Current < 1000uA Read Current < 400mA Write Current < 400mA Performance Read: Up to 95 MB/s Write: Up to 90 MB/s CPRM (Content Protection for Recordable Media) -40C ~ 85C Operation Temperature Range MTBF More than 3,000,000 hours Advanced Flash Management Static and Dynamic Wear Leveling Bad Block Management SMART Function Auto-Read Refresh Embedded Mode (Standard) Data Clone System (Optional) Storage Temperature Range -25C ~ 85C RoHS compliant EMI compliant Notes: 1. Varies by capacity, please see Section "5.1 Power Consumption" for details. (c) 2020 | Delkin Devices Inc. 2 Utility microSD L500650 Rev. GV Performance and Power Consumption Performance Capacity TestMetrixTest @500MB Power Consumption (Maximum) Read (mA) Write (mA) Idle (uA) 20 60 90 200 95 25 70 95 300 16GB 95 55 110 100 300 32GB 95 95 160 100 300 64GB 95 95 170 140 300 128GB 95 90 400 400 1000 Read (MB/s) Write (MB/s) 4GB 90 8GB NOTE: For more details on Power Consumption, please refer to Section 5.1. Power Consumption figures shown are maximum values and may vary with usage model, SDR configuration or host platform. (c) 2020 | Delkin Devices Inc. 3 Utility microSD L500650 Rev. GV Table of Contents 1. Introduction ............................................................................................................. 6 1.1. General Description ........................................................................................... 6 1.2. 1.2.1. 1.2.2. 1.2.3. 1.2.4. 1.2.5. 1.2.6. 1.2.7. Flash Management ............................................................................................ 7 Error Correction Code (ECC) .................................................................. 7 Wear Leveling ......................................................................................... 7 Bad Block Management .......................................................................... 7 Smart Function ........................................................................................ 7 Auto-Read Refresh ................................................................................. 8 Data Clone System (DCS) ...................................................................... 8 Embedded Mode ..................................................................................... 8 2. Product Specification overview ............................................................................. 9 2.1. Performance .................................................................................................... 10 2.2. Part Numbers ................................................................................................... 10 3. Environmental Specifications .............................................................................. 11 3.1. 3.1.1. 3.1.2. 3.1.3. 3.1.4. 3.1.5. Environmental Conditions ................................................................................ 11 Temperature and Humidity .................................................................... 11 Shock & Vibration .................................................................................. 11 Durability ............................................................................................... 11 Electrostatic Discharge (ESD) ............................................................... 11 EMI Compliance .................................................................................... 11 3.2. MTBF ............................................................................................................... 11 4. SD Card Comparison ............................................................................................ 13 5. Electrical Specifications ....................................................................................... 14 5.1. Power Consumption ......................................................................................... 14 5.2. 5.2.1. 5.2.2. 5.2.3. 5.2.4. DC Characteristics ........................................................................................... 14 Bus Operation Conditions for 3.3V Signaling ........................................ 14 Bus Signal Line Load ............................................................................ 16 Power Up Time ...................................................................................... 17 Power Up Time of Card ......................................................................... 18 5.3. 5.3.1. 5.3.2. 5.3.3. 5.3.4. AC Characteristics ........................................................................................... 19 microSD Interface Timing (Default) ....................................................... 19 microSD Interface Timing (High-Speed Mode) ...................................... 20 microSD Interface Timing (SDR12, SDR25 and SDR 50 Modes) ......... 21 microSD Interface Timing (DDR50 Mode) ............................................. 23 (c) 2020 | Delkin Devices Inc. 4 Utility microSD 6. Interface ................................................................................................................. 25 6.1. 7. L500650 Rev. GV Pad Assignment and Descriptions ................................................................... 25 SMART ................................................................................................................... 27 7.1. 7.1.1. 7.1.2. Direct Host Access to SMART Data via SD General Command (CMD56) ....... 27 Process for Retrieving SMART Data ..................................................... 28 Definitions for Response Data Bytes ..................................................... 30 7.2. Direct Host Access via DLL for Windows or Linux Operating Systems ............ 31 7.3. 7.3.1. Access via Delkin SMART Dashboard Utility ................................................... 32 Dashboard Field Descriptions ............................................................... 33 8. Physical Dimensions ............................................................................................ 34 List of Tables Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC, SDXC ........................... 13 Table 5-1 Power Consumption by Capacity (Maximum)................................. 14 Table 5-2 Threshold Level for High Voltage Range......................................... 14 Table 5-3 Peak Voltage and Leakage Current .................................................. 15 Table 5-4 Threshold Level for 1.8V Signaling .................................................. 15 Table 5-5 Input Leakage Current for 1.8V Signaling ....................................... 15 (c) 2020 | Delkin Devices Inc. 5 Utility microSD L500650 Rev. GV 1. INTRODUCTION 1.1. General Description Delkin's Utility microSD card version 3.0 is fully compliant with the specification released by the SD Card Association. The Command List supports [Part 1 Physical Layer Specification Version 3.01 Final] definitions and Card Capacity of Non-secure Area, Secure Area Supports [Part 3 Security Specification Ver3.00 Final] Specifications. The Utility microSD 3.0 card utilizes the standard 8-pin interface, designed to operate at a maximum operating frequency of 100MHz. It can alternate between SD mode and SPI mode communication protocols. SD also has the benefits of lower power consumption and high capacity, up to 128GB, in the smallest form factor available. Delkin's Utility microSD 3.0 card is an extremely popular choice today based on its high performance, excellent reliability and wide compatibility. It is ideal for OEM applications in semiindustrial, medical, handheld, and other markets requiring a controlled, yet cost-effective solution. (c) 2019 | Delkin Devices Inc. 6 Utility microSD L500650 Rev. GV 1.2. Flash Management 1.2.1. Error Correction Code (ECC) Flash memory cells will deteriorate with use, which might generate random bit errors in the stored data. Thus, Delkin's SD/microSD 3.0 controller applies the BCH ECC Algorithm, which can detect and correct errors that occur during the Read process, ensure data has been read correctly, as well as protect data from corruption. 1.2.2. Wear Leveling NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases, the flash media are not used evenly. If some areas are updated more frequently than others, the lifetime of the device would be reduced significantly. Thus, Wear Leveling techniques are applied to extend the lifespan of NAND Flash by evenly distributing write and erase cycles across the media. Delkin's SD 3.0 controller utilizes an advanced Wear Leveling algorithm, which can efficiently spread out the flash usage through the whole flash media area. Moreover, by implementing both dynamic and static Wear Leveling algorithms, the life expectancy of the NAND Flash is greatly improved. 1.2.3. Bad Block Management Bad blocks are blocks that include one or more invalid bits, and their reliability is not guaranteed. Blocks that are identified and marked as bad by the manufacturer are referred to as "Initial Bad Blocks". Bad blocks that are developed during the lifespan of the flash are named "Later Bad Blocks". Delkin's SD 3.0 controller implements an efficient bad block management algorithm to detect the factory-produced bad blocks and manages any bad blocks that develop with use. This practice further prevents data being stored into bad blocks and improves the data reliability. 1.2.4. Smart Function SMART, an acronym for Self-Monitoring, Analysis and Reporting Technology, is a special function that allows a memory device to automatically monitor its health. Delkin provides a dashboard to observe Utility SD and microSD cards. Note that this tool can only support Delkin Utility or Industrial SD and microSD cards which are SMART-enabled and contain specific controllers. This dashboard will display the controller version, flash type, firmware version, endurance life ratio, good block ratio, and so forth. In addition, a warning message will appear under the following 3 conditions: (1) When the life ratio remained is less than 10%, (c) 2019 | Delkin Devices Inc. 7 Utility microSD L500650 Rev. GV (2) When the amount of abnormal power on is more than 3,500 cycles, and (3) When there are less than 5 usable blocks for replacing bad blocks. 1.2.5. Auto-Read Refresh Auto-Read Refresh is especially applied on devices that mostly read data but rarely write data, GPS systems, for example. When blocks are continuously read, then the device cannot activate wear leveling since it is only applied while writing data. Thus, errors can accumulate and become uncorrectable. Therefore, to avoid the accumulation of errors that exceed the quantity correctable by the controller's ECC, which would result in bad blocks, Delkin's controller firmware will automatically refresh the bit errors when the error number in one block approaches the threshold, ex., 24 bits. 1.2.6. Data Clone System (DCS) DCS is a function which minimizes the chance of data loss in the event of sudden power interruption. When power loss occurs during writing, there will always be a chance for data become corrupted. To counter this, Delkin's SD controller firmware will write an extra copy of the data to a buffer block. In the event of a sudden power loss, during the next power up, ECC will be checked on the original target block. If ECC was discovered, the firmware will copy the data from the buffer block and replace the corrupted data in the original target block. This will greatly reduce the chance of the corrupted data. This is an optional configuration for Utility microSD, which will affect card performance and requires a different part number. 1.2.7. Embedded Mode Embedded mode is a function specially designed for Linux or customized OS use. Often under nonWindows OS, the default FAT system will not be used. In this case, the wear leveling mechanism of the SD cards will be affected, or even disabled in some cases. Embedded mode ensures that under any circumstances, the wear leveling mechanism will be activated, to keep the usage of blocks even throughout the card's life cycle. Embedded mode is enabled as a standard feature on the Utility microSD cards denoted in this specification. (c) 2019 | Delkin Devices Inc. 8 Utility microSD L500650 Rev. GV 2. PRODUCT SPECIFICATION OVERVIEW Capacity 4GB up to 128GB Operation Temp. Range -25~85C Storage Temp. Range -40~+85C Support SD system specification version 3.0 Card capacity of non-secure area and secure area support [Part 3 Security Specification Ver3.0 Final] Specifications Supports SD SPI mode Designed for read-only and read/write cards Bus Speed Mode (use 4 parallel data lines) UHS-I mode SDR104: 1.8V signaling, frequency up to 208MHz, up to 104MB/sec Note: Timing in 1.8V signaling is different from that of 3.3V signaling. The command list supports [Part 1 Physical Layer Specification Ver3.01 Final] definitions Copyright Protection Mechanism Compliant with the highest security of SDMI standard Supports CPRM (Content Protection for Recordable Media) of SD Card Card removal during read operation will never harm the content Password Protection of cards (optional) Built-in write protection features (permanent and temporary) +4KV/-4KV ESD protection in contact pads Operation voltage range: 2.7 ~ 3.6V (c) 2019 | Delkin Devices Inc. 9 Utility microSD L500650 Rev. GV 2.1. Performance Capacity Sequential UHS Mode Speed Class Read (MB/s) Write (MB/s) 4GB UHS-I Speed Class 1 90 20 8GB UHS-I Speed Class 1 95 25 16GB UHS-I Speed Class 3 95 55 32GB UHS-I Speed Class 3 95 95 64GB UHS-I Speed Class 3 95 95 128GB UHS-I Speed Class 3 95 90 NOTES: 1. Benchmark performance measured with TestMetrix Test (@500MB). 2.2. Part Numbers Utility microSD (c) 2019 | Delkin Devices Inc. Capacity Part Number 4GB S404APYE9-U1000-3 8GB S408APGE9-U1000-3 16GB S416APGE9-U3000-3 32GB S432APGE9-U3000-3 64GB S464APG5S-U3000-3 128GB S41HAPGAC-U30003 10 Utility microSD L500650 Rev. GV 3. ENVIRONMENTAL SPECIFICATIONS 3.1. Environmental Conditions 3.1.1. Temperature and Humidity Storage Temperature Range -40C ~ 85C Operation Temperature Range -25C ~ 85C Humidity 95% RH under 40C 3.1.2. Shock & Vibration Shock Specification 1500G, 0.5ms duration, 3 axes Vibration Specification 20Hz ~80Hz/1.52mm displacement, 80Hz~2000Hz / 20G Acceleration, 3 axes 3.1.3. Durability Mating Cycles 10,000 mating cycles 3.1.4. Electrostatic Discharge (ESD) Contact 4KV Air 8KV 3.1.5. EMI Compliance FCC: CISPR22 CE: EN55022 BSMI 13438 3.2. MTBF MTBF, an acronym for Mean Time Between Failures, is a measure of a device's reliability. Its value represents the average time between a repair and the next failure. The measure is typically in units of hours. The higher the MTBF value, the higher the reliability of the device. The predicted result of (c) 2019 | Delkin Devices Inc. 11 Utility microSD L500650 Rev. GV Delkin's Utility SD is more than 3,000,000 hours at temperatures up to 25C. (c) 2019 | Delkin Devices Inc. 12 Utility microSD L500650 Rev. GV 4. SD CARD COMPARISON Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC, SDXC SD3.0 Standard (Backward compatible to 2.0 host) Byte (1 byte unit) SD3.0 SDHC (Backward compatible to 2.0 host) Block (512 byte unit) Block (512 byte unit) HCS/CCS bits of ACMD41 Supported Supported Supported CMD8 (SEND_IF_COND) Supported Supported Supported CMD16 (SET_BLOCKLEN) Supported Supported (Only CMD42) Supported (Only CMD42) Partial Read Supported Not Supported Not Supported Lock/Unlock Function Write Protect Groups Supply Voltage 2.0v - 2.7v (for initialization) Total Bus Capacitance for each signal line CSD Version (CSD_STRUCTURE Value) Speed Class Mandatory Optional Mandatory Not Supported Mandatory Not Supported Not Supported Not Supported Not Supported 40pF 40pF 40pF 1.0 (0x0) 2.0 (0x1) 2.0 (0x1) Optional Mandatory Mandatory Addressing Mode (c) 2019 | Delkin Devices Inc. SD3.0 SDXC 13 Utility microSD L500650 Rev. GV 5. ELECTRICAL SPECIFICATIONS 5.1. Power Consumption The table below is the power consumption for Delkin Utility microSD cards by capacity. Table 5-1 Power Consumption by Capacity (Maximum) Capacity Read (mA) Write (mA) Idle (uA) 4GB 60 90 200 8GB 70 95 300 16GB 110 100 300 32GB 160 100 300 64GB 170 140 300 128GB 400 400 1000 NOTE: 1. Power Consumption shown is maximum and will vary by usage model, SDR configuration, or platform. 5.2. DC Characteristics 5.2.1. Bus Operation Conditions for 3.3V Signaling Table 5-2 Threshold Level for High Voltage Range Parameter Symbol Min. Max Unit Supply Voltage VDD 2.7 3.6 V Output High Voltage VOH 0.75*VDD Output Low Voltage VOL Input High Voltage VIH Input Low Voltage VIL Power Up Time (c) 2019 | Delkin Devices Inc. V 0.125*VDD V 0.625*VDD VDD+0.3 V VSS-0.3 0.25*VDD V 250 ms Condition IOH=-2mA VDD Min IOL=2mA VDD Min From 0V to VDD min 14 Utility microSD L500650 Rev. GV Table 5-3 Peak Voltage and Leakage Current Parameter Symbol Peak voltage on all lines Min Max. Unit -0.3 VDD+0.3 V 10 uA 10 uA Remarks All Inputs Input Leakage Current -10 All Outputs Output Leakage -10 Current Table 5-4 Threshold Level for 1.8V Signaling Parameter Symbol Min. Max Unit VDD 2.7 3.6 V VDDIO 1.7 1.95 V Output High Voltage VOH 1.4 - V IOH=-2mA Output Low Voltage VOL - 0.45 V IOL=2mA Input High Voltage VIH 1.27 2.00 V Input Low Voltage VIL Vss-0.3 0.58 V Supply Voltage Regulator Voltage Condition Generated by VDD Table 5-5 Input Leakage Current for 1.8V Signaling Parameter Input Leakage Current (c) 2019 | Delkin Devices Inc. Symbol Min Max. Unit -2 2 uA Remarks DAT3 pull-up is disconnected. 15 Utility microSD L500650 Rev. GV 5.2.2. Bus Signal Line Load Figure 5-1 Bus Circuitry Diagram Bus Operation Conditions - Signal Line's Load Total Bus Capacitance = CHOST + CBUS + N CCARD Parameter Pull-up resistance Total bus capacitance for each signal line symbol RCMD RDAT Min Max Unit Remark 10 100 k to prevent bus floating 1 card CL 40 CCAR pin D Maximum signal line inductance (pin1) Capacity Connected to Power Line (c) 2019 | Delkin Devices Inc. CHOST+CBUS shall not exceed 30 pF Card Capacitance for each signal Pull-up resistance inside card pF 10 pF 16 nH 90 k 5 uF RDAT 3 CC 10 May be used for card detection To prevent inrush current 16 Utility microSD L500650 Rev. GV 5.2.3. Power Up Time Host needs to keep power line level less than 0.5V and more than 1ms before power ramp up. Power On or Power Cycle Followings are requirements for Power on and Power cycle to assure a reliable SD Card hard reset. (1) Voltage level shall be below 0.5V. (2) Duration shall be at least 1ms. Power Supply Ramp Up The power ramp up time is defined from 0.5V threshold level up to the operating supply voltage which is stable between VDD (min.) and VDD (max.) and host can supply SDCLK. Followings are recommendations of Power ramp up: (1) Voltage of power ramp up should be monotonic as much as possible. (2) The minimum ramp up time should be 0.1ms. (3) The maximum ramp up time should be 35ms for 2.7-3.6V power supply. Power Down and Power Cycle (1) When the host shuts down the power, the card VDD shall be lowered to less than 0.5Volt for a minimum period of 1ms. During power down, DAT, CMD, and CLK should be disconnected or driven to logical 0 by the host to avoid a situation that the operating current is drawn through the signal lines. (2) If the host needs to change the operating voltage, a power cycle is required. Power cycle means the power is turned off and supplied again. Power cycle is also needed for accessing cards that are already in Inactive State. To create a power cycle the host shall follow the power down description before power up the card (i.e. the card VDD shall be once lowered to less than 0.5Volt for a minimum period of 1ms). (c) 2019 | Delkin Devices Inc. 17 Utility microSD L500650 Rev. GV 5.2.4. Power Up Time of Card A device shall be ready to accept the first command within 1ms from detecting VDD min.Device may use up to 74 clocks for preparation before receiving the first command. Valid voltage range for all commands (c) 2019 | Delkin Devices Inc. 18 Utility microSD L500650 Rev. GV 5.3. AC Characteristics 5.3.1. microSD Interface Timing (Default) Parameter Symbol Min Max Unit Remark Clock CLK (All values are referred to min(VIH) and max(VIL) Clock frequency Data fPP Ccard 10 pF 0 25 MHz Transfer Mode (1 card) Clock frequency Ccard 10 pF fOD 0(1)/100 400 kHz Identification Mode (1 card) Ccard 10 pF Clock low time tWL 10 ns (1 card) Ccard 10 pF Clock high time tWH 10 ns (1 card) Ccard 10 pF Clock rise time tTLH 10 ns (1 card) Ccard 10 pF Clock fall time tTHL 10 ns (1 card) Inputs CMD, DAT (referenced to CLK) Ccard 10 pF Input set-up time tISU 5 ns (1 card) Ccard 10 pF Input hold time tIH 5 ns (1 card) Outputs CMD, DAT (referenced to CLK) Output Delay time CL40 pF during Data Transfer tODLY 0 14 ns (1 card) Mode Output Delay time CL40 pF during Identification tODLY 0 50 ns (1 card) Mode (1) 0Hz means to stop the clock. The given minimum frequency range is for cases were continues clock is required. (c) 2019 | Delkin Devices Inc. 19 Utility microSD L500650 Rev. GV 5.3.2. microSD Interface Timing (High-Speed Mode) Parameter Symbol Min Max Unit Remark Clock CLK (All values are referred to min(VIH) and max(VIL) Clock frequency Data fPP 0 50 MHz Ccard 10 pF (1 card) Transfer Mode Clock low time tWL 7 ns Ccard 10 pF (1 card) Clock high time tWH 7 ns Ccard 10 pF (1 card) Clock rise time tTLH 3 ns Ccard 10 pF (1 card) Clock fall time tTHL 3 ns Ccard 10 pF (1 card) Inputs CMD, DAT (referenced to CLK) Input set-up time tISU 6 ns Ccard 10 pF (1 card) Input hold time tIH 2 ns Ccard 10 pF (1 card) Outputs CMD, DAT (referenced to CLK) Output Delay time during tODLY 14 ns CL 40 pF (1 card) Data Transfer Mode Output Hold time TOH 2.5 ns CL 15 pF (1 card) Total System capacitance CL 40 pF CL 15 pF (1 card) of each line (1) In order to satisfy severe timing, the host shall drive only one card. (c) 2019 | Delkin Devices Inc. 20 Utility microSD L500650 Rev. GV 5.3.3. microSD Interface Timing (SDR12, SDR25 and SDR 50 Modes) Input: Symbol Min Max Unit tCLK 4.80 - ns tCR, tCF - 0.2* tCLK ns Clock Duty 30 70 % Remark 208MHz (Max.), Between rising edge, VCT= 0.975V tCR, tCF < 2.00ns (max.) at 100MHz, CCARD=10pF SDR50 SDR 104 Input Timing: Symbol tIS tIH Symbol tIS tIH Min 1.40 0.80 Min 3.00 0.80 (c) 2019 | Delkin Devices Inc. Max Max - Unit ns ns Unit ns ns SDR104 Mode CCARD =10pF, VCT= 0.975V CCARD =5pF, VCT= 0.975V SDR50 Mode CCARD =10pF, VCT= 0.975V CCARD =5pF, VCT= 0.975V 21 Utility microSD L500650 Rev. GV Output: Symbol Min Max Unit tODLY - 7.5 ns tODLY - 14 ns - ns TOH 1.5 Remark tCLK>=10.0ns, CL=30pF, using driver Type B, for SDR50 tCLK>=20.0ns, CL=40pF, using driver Type B, for SDR25 and SDR12, Hold time at the tODLY (min.), CL=15pF Output (SDR104 mode): Symbol tOP tOP tODW Min -350 0.60 (c) 2019 | Delkin Devices Inc. Max 2 +1550 - Unit UI ps UI Remark Card Output Phase Delay variable due to temperature change after tuning tODW = 2.88ns at 208MHz 22 Utility microSD L500650 Rev. GV 5.3.4. microSD Interface Timing (DDR50 Mode) Symbol Min Max Unit Remark tCLK 20 - ns 50MHz (Max.), Between rising edge tCR, tCF - 0.2* tCLK ns tCR, tCF < 4.00ns (max.) at 50MHz, CCARD=10pF Clock Duty 45 55 % (c) 2019 | Delkin Devices Inc. 23 Utility microSD L500650 Rev. GV Parameter Symbol Min Max Unit Input CMD (referenced to CLK rising edge) Input set-up time tISU 6 - ns Input hold time tIH 0.8 - ns Output CMD (referenced to CLK rising edge) Output Delay time during Data Transfer tODLY 13.7 ns Mode Output Hold time TOH 1.5 - ns Remark Ccard 10 pF (1 card) Ccard 10 pF (1 card) CL30 pF (1 card) CL15 pF (1 card) Inputs DAT (referenced to CLK rising and falling edges) Ccard 10 pF Input set-up time tISU2x 3 ns (1 card) Ccard 10 pF Input hold time tIH2x 0.8 ns (1 card) Outputs DAT (referenced to CLK rising and falling edges) Output Delay time CL25 pF during Data Transfer tODLY2x 7.0 ns (1 card) Mode CL15 pF Output Hold time TOH2x 1.5 ns (1 card) (c) 2019 | Delkin Devices Inc. 24 Utility microSD L500650 Rev. GV 6. INTERFACE 6.1. Pad Assignment and Descriptions pin SD Mode SPI Mode Name Type1 Description DAT2 I/O/PP Data Line[bit2] RSV CD/DAT3 I/O/PP 2 3 Card Detect/ Data Line[bit3] CS I3 Chip Select (neg true) 3 CMD PP Command/Response DI I Data In 4 VDD S Supply voltage VDD S Supply voltage 5 CLK I Clock SCLK I Clock 6 VSS S Supply voltage ground VSS S Supply voltage ground 7 DAT0 I/O/PP Data Line[bit0] DO O/PP Data Out 8 DAT1 I/O/PP Data Line[bit1] RSV 1 2 Name Type Description (1) S: power supply, I: input; O: output using push-pull drivers; PP:I/O using push-pull drivers (2) The extended DAT lines (DAT1-DAT3)are input on power up. They start to operate as DAT lines after SET_BUS_WIDTH command. The Host shall keep its own DAT1-DAT3 lines in input mode, as well, while they are not used. It is defined so, in order to keep compatibility to MultiMedia Cards. (3) At power up this line has a 50KOhm pull up enabled in the card. This resistor serves two functions Card detection and Mode Selection. For Mode Selection, the host can drive the line high or let it be pulled high to select SD mode. If the host wants to select SPI mode it should drive the line low. For Card detection, the host detects that the line is pulled high. This pull-up should be disconnected by the user during regular data transfer period, with SET_CLR_CARD_DETECT (ACMD42) command. (c) 2019 | Delkin Devices Inc. 25 Utility microSD L500650 Rev. GV Name Width CID 128bit Description Card identification number; card individual number for identification. Mandatory Relative card address; local system address of a card, dynamically RCA1 16bit suggested by the card and approved by the host during initialization. Mandatory DSR 16bit CSD 128bit SCR 64bit OCR 32bit SSR 512bit OCR 32bit Driver Stage Register; to configure the card's output drivers. Optional Card Specific Data; information about the card operation conditions. Mandatory SD Configuration Register; information about the SD Memory Card's Special Features capabilities Mandatory Operation conditions register. Mandatory. SD Status; information about the card proprietary features Mandatory Card Status; information about the card status Mandatory (1) RCA register is not used (or available) in SPI mode. (c) 2019 | Delkin Devices Inc. 26 Utility microSD L500650 Rev. GV 7. SMART 7.1. Direct Host Access to SMART Data via SD General Command (CMD56) CMD 56 is structured as a 32-bit argument. The implementation of the general purpose functions will arrange the CMD56 argument into the following format: [31:24] [23:16] Argument #3 Bit [0] Argument #2 [15:18] Argument #1 [7:1] [0] Index "1/0" Indicates Read Mode when bit is set to [1] or Write Mode when bit is cleared [0]. Depending on the function, either Read Mode or Write Mode can be used. Bit [7:1] Indicates the index of the function to be executed: - Read Mode - Index = 0x10 Get SMART Command Information Write Mode Index = 0x08 Pre-Load SMART Command Information Bit [15:8] Function argument #1 (1-byte) Bit [23:16] Function argument #2 (1-byte) Bit [31:24] Function argument #3 (1-byte) (c) 2019 | Delkin Devices Inc. 27 Utility microSD L500650 Rev. GV 7.1.1. Process for Retrieving SMART Data STEP 1: Write Mode - [0x08] Pre-Load SMART Command Information Sequence Command Pre-Load SMART CMD56 Argument [0] "0" (Write Mode) [1:7] "0001 000" Command Expected Data No Expected Data (Index = 0x08) [8:511] All `0' Reserved) Information STEP 2: Read Mode - [0x10] Get SMART Command Information Sequence Command Argument Expected Data Get SMART CMD56 [0] 1 sector (512 bytes) of response data "1" (Read Mode) Command Information [1:7] Byte [0-8] Flash ID "0010 000" Byte [9-10] IC Version (Index = 0x10) Byte [11-12] FW Version Byte [13] Reserved Byte [14] CE Number Byte [15] Reserved Byte [16-17] Maximum Bad Block Replacement Byte [18] Reserved Byte [32-63] Bad Block Count per CE Byte [64-65] Good Block Rate (%) Byte [66-79] Reserved Byte [80-83] Total Erase Count Byte [84-95] Reserved Byte [96-97] Calculated Remaining Life (%) Byte [98-99] Average Erase Count Byte [100-101] Minimum Erase Count Byte [102-103] Maximum Erase Count Byte [104-111] Reserved Byte [112-115] Power Cycle Count Byte [116-127] Reserved Byte [128-129] Abnormal Power Down Count Byte [130-159] Reserved Byte [160-161] Total Refresh Count Byte [176-183] Product "Marker" Byte [184-511] Reserved [8:511] All `0' Reserved) (c) 2019 | Delkin Devices Inc. 28 Utility microSD L500650 Rev. GV Note: Both steps are required to retrieve SMART data - Pre-Load SMART Command followed by Get SMART Command, and must be in accordance with the SD Association standard flowchart for CMD56 (below.) Extracted from the SD Specifications Part 1 Physical Layer Simplified Specification Version 3.01. (c) 2019 | Delkin Devices Inc. 29 Utility microSD L500650 Rev. GV 7.1.2. Definitions for Response Data Bytes Response Data Description Flash ID NAND Flash Type IC Version Controller Version FW Version Firmware Version CE Number Number of chip enables active Maximum Bad Block Replacement Number of spare blocks remaining Bad Block Count per CE Number of initial & new bad blocks per chip enable Good Block Rate (%) Percent of total blocks that are still marked good Total Erase Count Total number of block erases at the card level Calculated Remaining Card Life [(Rated P/E cycles - Current Erase Count) / Rated P/E Cycles] * 100% Average Erase Count Average erase count over all blocks Minimum Erase Count Minimum erase count over all blocks Maximum Erase Count Maximum erase count over all blocks Power Cycle Count Number of normal power up sequences Abnormal Power Down Count Number of unexpected power interruptions Total Refresh Count Total read refresh count Product "Marker" Product type (c) 2019 | Delkin Devices Inc. 30 Utility microSD L500650 Rev. GV 7.2. Direct Host Access via DLL for Windows or Linux Operating Systems Note: Card must be in Idle state before and while accessing card as per steps below. API entry: int Get_Smart_Data(char drive_letter, unsigned char *buffer, int buffer_len, int *bytes_read); Arguments: 1: Drive letter is a character of the drive letter, i.e. `E' 2: buffer is a pointer to a pre-allocated array to store SMART data, min 512 bytes 3: buffer_len indicates to the API the size of the buffer, typically it is 512 bytes 4: bytes_read indicates the number of bytes returned in the buffer Return Value: 0 is success; Non zero is fail, with the following definitions: 1: "Initial Command Flow Fail" 2: "Read Capacity Fail" 3: "Switch To Vendor Mode Fail" 4: "Send Smart Info Command Fail" 5: "Get Command Response Fail" 6: "Command Response Info Incorrect" 7: "Read Command Info Fail" 8: "Check Command State Fail" 9: "Close Command Flow Fail" (c) 2019 | Delkin Devices Inc. 31 Utility microSD L500650 Rev. GV 7.3. Access via Delkin SMART Dashboard Utility Delkin customers will be able to download the Delkin SMART dashboard utility (for Windows OS only) at www.delkinindustrial.com on the Engineering Specification page, or by contacting your Delkin Devices Account Manager. SMART data is accessed by inserting a card in a USB reader or directly in a laptop SD slot (with an SD adapter.) Below is a screen shot of the dashboard with sample data: Instructions for use: 1. Insert microSD in card reader or in SD slot on laptop (in SD adapter) 2. Select appropriate drive letter on Dashboard 3. Click "Go" (c) 2019 | Delkin Devices Inc. 32 Utility microSD L500650 Rev. GV 7.3.1. Dashboard Field Descriptions Response Data Description FW Version Firmware Version Total Refresh Count Total read refresh count Total Power Up Count Number of normal power up sequences Abnormal Power Off Number of unexpected power interruptions Average Erase Count Average erase count over all blocks Maximum Erase Count Maximum erase count over all blocks Total Erase Count Total number of block erases at the card level Erase Endurance Flash program / erase cycle rating per block Endurance Life Ratio Good Block Ratio [(Rated P/E cycles - Current Erase Count) / Rated P/E Cycles] * 100% Percent of total blocks that are still marked good Remaining Spare Block Count Number of spare blocks remaining Bad Block Scan Bad blocks in flash from inception, prior to card use - Initial (per die) Bad Block Scan - New (per die) (c) 2019 | Delkin Devices Inc. Bad blocks created after card use 33 Utility microSD L500650 Rev. GV 8. PHYSICAL DIMENSIONS Dimension Value Length 15mm 0.1mm Width 11mm 0.1mm Thickness 1mm 0.1mm Refer to SD Association microSD Addendum standard for further dimensional details. https://www.sdcard.org/ WARNING: This product may contain chemicals known to the State of California to cause cancer, birth defects, or other reproductive harm. For more information go to www.p65warnings.ca.gov. (c) 2019 | Delkin Devices Inc. 34