Utility microSD L500650 Rev. GV
© 2020 | Delkin Devices Inc. 2
Overview
⚫ Capacity
◼ 4GB up to 128GB
⚫ Bus Speed Mode
◼ 4GB~128GB: UHS-I
⚫ Flash Interface
￭ Flash Type: MLC
⚫ Power ConsumptionNote1
◼ Power Up Current < 250uA
◼ Standby Current < 1000uA
◼ Read Current < 400mA
◼ Write Current < 400mA
⚫ Performance
◼ Read: Up to 95 MB/s
◼ Write: Up to 90 MB/s
⚫ CPRM (Content Protection for
Recordable Media)
⚫ MTBF
◼ More than 3,000,000 hours
⚫ Advanced Flash Management
◼ Static and Dynamic Wear
Leveling
◼ Bad Block Management
◼ SMART Function
◼ Auto-Read Refresh
◼ Embedded Mode (Standard)
◼ Data Clone System (Optional)
⚫ Storage Temperature Range
◼ -40°C ~ 85°C
⚫ Operation Temperature Range
◼ -25°C ~ 85°C
⚫ RoHS compliant
⚫ EMI compliant
Notes:
1. Varies by capacity, please see Section “5.1 Power Consumption” for details.
Utility microSD L500650 Rev. GV
© 2020 | Delkin Devices Inc. 3
Performance and Power Consumption
Capacity
Performance
Power Consumption
(Maximum)
TestMetrixTest @500MB
Read
(mA)
Write
(mA)
Idle
(uA)
Read
(MB/s)
Write
(MB/s)
4GB
90
20
60
90
200
8GB
95
25
70
95
300
16GB
95
55
110
100
300
32GB
95
95
160
100
300
64GB
95
95
170
140
300
128GB
95
90
400
400
1000
NOTE:
For more details on Power Consumption, please refer to Section 5.1.
Power Consumption figures shown are maximum values and may vary with usage model,
SDR configuration or host platform.
Utility microSD L500650 Rev. GV
© 2020 | Delkin Devices Inc. 4
Table of Contents
1. Introduction ............................................................................................................. 6
1.1. General Description ........................................................................................... 6
1.2. Flash Management ............................................................................................ 7
1.2.1. Error Correction Code (ECC) .................................................................. 7
1.2.2. Wear Leveling ......................................................................................... 7
1.2.3. Bad Block Management .......................................................................... 7
1.2.4. Smart Function ........................................................................................ 7
1.2.5. Auto-Read Refresh ................................................................................. 8
1.2.6. Data Clone System (DCS) ...................................................................... 8
1.2.7. Embedded Mode ..................................................................................... 8
2. Product Specification overview ............................................................................. 9
2.1. Performance .................................................................................................... 10
2.2. Part Numbers ................................................................................................... 10
3. Environmental Specifications .............................................................................. 11
3.1. Environmental Conditions ................................................................................ 11
3.1.1. Temperature and Humidity .................................................................... 11
3.1.2. Shock & Vibration .................................................................................. 11
3.1.3. Durability ............................................................................................... 11
3.1.4. Electrostatic Discharge (ESD) ............................................................... 11
3.1.5. EMI Compliance .................................................................................... 11
3.2. MTBF ............................................................................................................... 11
4. SD Card Comparison ............................................................................................ 13
5. Electrical Specifications ....................................................................................... 14
5.1. Power Consumption ......................................................................................... 14
5.2. DC Characteristics ........................................................................................... 14
5.2.1. Bus Operation Conditions for 3.3V Signaling ........................................ 14
5.2.2. Bus Signal Line Load ............................................................................ 16
5.2.3. Power Up Time ...................................................................................... 17
5.2.4. Power Up Time of Card ......................................................................... 18
5.3. AC Characteristics ........................................................................................... 19
5.3.1. microSD Interface Timing (Default) ....................................................... 19
5.3.2. microSD Interface Timing (High-Speed Mode) ...................................... 20
5.3.3. microSD Interface Timing (SDR12, SDR25 and SDR 50 Modes) ......... 21
5.3.4. microSD Interface Timing (DDR50 Mode) ............................................. 23
Utility microSD L500650 Rev. GV
© 2020 | Delkin Devices Inc. 5
6. Interface ................................................................................................................. 25
6.1. Pad Assignment and Descriptions ................................................................... 25
7. SMART ................................................................................................................... 27
7.1. Direct Host Access to SMART Data via SD General Command (CMD56) ....... 27
7.1.1. Process for Retrieving SMART Data ..................................................... 28
7.1.2. Definitions for Response Data Bytes ..................................................... 30
7.2. Direct Host Access via DLL for Windows or Linux Operating Systems ............ 31
7.3. Access via Delkin SMART Dashboard Utility ................................................... 32
7.3.1. Dashboard Field Descriptions ............................................................... 33
8. Physical Dimensions ............................................................................................ 34
List of Tables
Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC, SDXC ........................... 13
Table 5-1 Power Consumption by Capacity (Maximum) ................................. 14
Table 5-2 Threshold Level for High Voltage Range ......................................... 14
Table 5-3 Peak Voltage and Leakage Current .................................................. 15
Table 5-4 Threshold Level for 1.8V Signaling .................................................. 15
Table 5-5 Input Leakage Current for 1.8V Signaling ....................................... 15
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 6
1. INTRODUCTION
1.1. General Description
Delkin’s Utility microSD card version 3.0 is fully compliant with the specification released by the
SD Card Association. The Command List supports [Part 1 Physical Layer Specification Version
3.01 Final] definitions and Card Capacity of Non-secure Area, Secure Area Supports [Part 3
Security Specification Ver3.00 Final] Specifications.
The Utility microSD 3.0 card utilizes the standard 8-pin interface, designed to operate at a maximum
operating frequency of 100MHz. It can alternate between SD mode and SPI mode communication
protocols. SD also has the benefits of lower power consumption and high capacity, up to 128GB,
in the smallest form factor available.
Delkin’s Utility microSD 3.0 card is an extremely popular choice today based on its high
performance, excellent reliability and wide compatibility. It is ideal for OEM applications in semi-
industrial, medical, handheld, and other markets requiring a controlled, yet cost-effective solution.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 7
1.2. Flash Management
1.2.1. Error Correction Code (ECC)
Flash memory cells will deteriorate with use, which might generate random bit errors in the stored
data. Thus, Delkin’s SD/microSD 3.0 controller applies the BCH ECC Algorithm, which can detect
and correct errors that occur during the Read process, ensure data has been read correctly, as well
as protect data from corruption.
1.2.2. Wear Leveling
NAND Flash devices can only undergo a limited number of program/erase cycles, and in most cases,
the flash media are not used evenly. If some areas are updated more frequently than others, the
lifetime of the device would be reduced significantly. Thus, Wear Leveling techniques are applied to
extend the lifespan of NAND Flash by evenly distributing write and erase cycles across the media.
Delkin’s SD 3.0 controller utilizes an advanced Wear Leveling algorithm, which can efficiently spread
out the flash usage through the whole flash media area. Moreover, by implementing both dynamic
and static Wear Leveling algorithms, the life expectancy of the NAND Flash is greatly improved.
1.2.3. Bad Block Management
Bad blocks are blocks that include one or more invalid bits, and their reliability is not guaranteed.
Blocks that are identified and marked as bad by the manufacturer are referred to as “Initial Bad
Blocks”. Bad blocks that are developed during the lifespan of the flash are named “Later Bad Blocks”.
Delkin’s SD 3.0 controller implements an efficient bad block management algorithm to detect the
factory-produced bad blocks and manages any bad blocks that develop with use. This practice
further prevents data being stored into bad blocks and improves the data reliability.
1.2.4. Smart Function
SMART, an acronym for Self-Monitoring, Analysis and Reporting Technology, is a special function
that allows a memory device to automatically monitor its health. Delkin provides a dashboard to
observe Utility SD and microSD cards. Note that this tool can only support Delkin Utility or
Industrial SD and microSD cards which are SMART-enabled and contain specific controllers.
This dashboard will display the controller version, flash type, firmware version, endurance life ratio,
good block ratio, and so forth. In addition, a warning message will appear under the following 3
conditions:
(1) When the life ratio remained is less than 10%,
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 8
(2) When the amount of abnormal power on is more than 3,500 cycles, and
(3) When there are less than 5 usable blocks for replacing bad blocks.
1.2.5. Auto-Read Refresh
Auto-Read Refresh is especially applied on devices that mostly read data but rarely write data, GPS
systems, for example. When blocks are continuously read, then the device cannot activate wear
leveling since it is only applied while writing data. Thus, errors can accumulate and become
uncorrectable. Therefore, to avoid the accumulation of errors that exceed the quantity correctable
by the controller’s ECC, which would result in bad blocks, Delkin’s controller firmware will
automatically refresh the bit errors when the error number in one block approaches the threshold,
ex., 24 bits.
1.2.6. Data Clone System (DCS)
DCS is a function which minimizes the chance of data loss in the event of sudden power interruption.
When power loss occurs during writing, there will always be a chance for data become corrupted.
To counter this, Delkin’s SD controller firmware will write an extra copy of the data to a buffer block.
In the event of a sudden power loss, during the next power up, ECC will be checked on the original
target block. If ECC was discovered, the firmware will copy the data from the buffer block and replace
the corrupted data in the original target block. This will greatly reduce the chance of the corrupted
data. This is an optional configuration for Utility microSD, which will affect card performance and
requires a different part number.
1.2.7. Embedded Mode
Embedded mode is a function specially designed for Linux or customized OS use. Often under non-
Windows OS, the default FAT system will not be used. In this case, the wear leveling mechanism of
the SD cards will be affected, or even disabled in some cases. Embedded mode ensures that under
any circumstances, the wear leveling mechanism will be activated, to keep the usage of blocks even
throughout the card’s life cycle. Embedded mode is enabled as a standard feature on the Utility
microSD cards denoted in this specification.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 9
2. PRODUCT SPECIFICATION OVERVIEW
⚫ Capacity
￭ 4GB up to 128GB
⚫ Operation Temp. Range
￭ -25~85°C
⚫ Storage Temp. Range
￭ -40~+85°C
⚫ Support SD system specification version 3.0
⚫ Card capacity of non-secure area and secure area support [Part 3 Security
Specification Ver3.0 Final] Specifications
⚫ Supports SD SPI mode
⚫ Designed for read-only and read/write cards
⚫ Bus Speed Mode (use 4 parallel data lines)
￭ UHS-I mode
➢ SDR104: 1.8V signaling, frequency up to 208MHz, up to 104MB/sec
Note: Timing in 1.8V signaling is different from that of 3.3V signaling.
⚫ The command list supports [Part 1 Physical Layer Specification Ver3.01 Final]
definitions
⚫ Copyright Protection Mechanism
￭ Compliant with the highest security of SDMI standard
⚫ Supports CPRM (Content Protection for Recordable Media) of SD Card
⚫ Card removal during read operation will never harm the content
⚫ Password Protection of cards (optional)
⚫ Built-in write protection features (permanent and temporary)
⚫ +4KV/-4KV ESD protection in contact pads
⚫ Operation voltage range: 2.7 ~ 3.6V
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 10
2.1. Performance
Capacity
Mode
UHS
Speed Class
Sequential
Read
(MB/s)
Write (MB/s)
4GB
UHS-I
Speed Class 1
90
20
8GB
UHS-I
Speed Class 1
95
25
16GB
UHS-I
Speed Class 3
95
55
32GB
UHS-I
Speed Class 3
95
95
64GB
UHS-I
Speed Class 3
95
95
128GB
UHS-I
Speed Class 3
95
90
NOTES:
1. Benchmark performance measured with TestMetrix Test (@500MB).
2.2. Part Numbers
Utility microSD
Capacity
Part Number
4GB
S404APYE9-U1000-3
8GB
S408APGE9-U1000-3
16GB
S416APGE9-U3000-3
32GB
S432APGE9-U3000-3
64GB
S464APG5S-U3000-3
128GB
S41HAPGAC-U3000-
3
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 11
3. ENVIRONMENTAL SPECIFICATIONS
3.1. Environmental Conditions
3.1.1. Temperature and Humidity
⚫ Storage Temperature Range
￭ -40°C ~ 85°C
⚫ Operation Temperature Range
￭ -25°C ~ 85°C
⚫ Humidity
￭ 95% RH under 40°C
3.1.2. Shock & Vibration
⚫ Shock Specification
￭ 1500G, 0.5ms duration, 3 axes
⚫ Vibration Specification
￭ 20Hz ~80Hz/1.52mm displacement, 80Hz~2000Hz / 20G Acceleration, 3 axes
3.1.3. Durability
⚫ Mating Cycles
￭ 10,000 mating cycles
3.1.4. Electrostatic Discharge (ESD)
⚫ Contact
￭ ± 4KV
⚫ Air
￭ ± 8KV
3.1.5. EMI Compliance
⚫ FCC: CISPR22
⚫ CE: EN55022
⚫ BSMI 13438
3.2. MTBF
MTBF, an acronym for Mean Time Between Failures, is a measure of a device’s reliability. Its value
represents the average time between a repair and the next failure. The measure is typically in units
of hours. The higher the MTBF value, the higher the reliability of the device. The predicted result of
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 12
Delkin’s Utility SD is more than 3,000,000 hours at temperatures up to 25°C.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 13
4. SD CARD COMPARISON
Table 4-1 Comparing SD3.0 Standard, SD3.0 SDHC, SDXC
SD3.0 Standard
(Backward
compatible to 2.0
host)
SD3.0 SDHC
(Backward
compatible to 2.0
host)
SD3.0 SDXC
Addressing Mode
Byte
(1 byte unit)
Block
(512 byte unit)
Block
(512 byte unit)
HCS/CCS bits of ACMD41
Supported
Supported
Supported
CMD8 (SEND_IF_COND)
Supported
Supported
Supported
CMD16 (SET_BLOCKLEN)
Supported
Supported
(Only CMD42)
Supported
(Only CMD42)
Partial Read
Supported
Not Supported
Not Supported
Lock/Unlock Function
Mandatory
Mandatory
Mandatory
Write Protect Groups
Optional
Not Supported
Not Supported
Supply Voltage 2.0v – 2.7v
(for initialization)
Not Supported
Not Supported
Not Supported
Total Bus Capacitance for
each signal line
40pF
40pF
40pF
CSD Version
(CSD_STRUCTURE Value)
1.0 (0x0)
2.0 (0x1)
2.0 (0x1)
Speed Class
Optional
Mandatory
Mandatory
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 14
5. ELECTRICAL SPECIFICATIONS
5.1. Power Consumption
The table below is the power consumption for Delkin Utility microSD cards by capacity.
Table 5-1 Power Consumption by Capacity (Maximum)
Capacity
Read (mA)
Write (mA)
Idle (uA)
4GB
60
90
200
8GB
70
95
300
16GB
110
100
300
32GB
160
100
300
64GB
170
140
300
128GB
400
400
1000
NOTE:
1. Power Consumption shown is maximum and will vary by usage model, SDR configuration,
or platform.
5.2. DC Characteristics
5.2.1. Bus Operation Conditions for 3.3V Signaling
Table 5-2 Threshold Level for High Voltage Range
Parameter
Symbol
Min.
Max
Unit
Condition
Supply Voltage
VDD
2.7
3.6
V
Output High Voltage
VOH
0.75*VDD
V
IOH=-2mA VDD
Min
Output Low Voltage
VOL
0.125*VDD
V
IOL=2mA VDD
Min
Input High Voltage
VIH
0.625*VDD
VDD+0.3
V
Input Low Voltage
VIL
VSS-0.3
0.25*VDD
V
Power Up Time
250
ms
From 0V to VDD
min
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 15
Table 5-3 Peak Voltage and Leakage Current
Parameter
Symbol
Min
Max.
Unit
Remarks
Peak voltage on all
lines
-0.3
VDD+0.3
V
All Inputs
Input Leakage Current
-10
10
uA
All Outputs
Output Leakage
Current
-10
10
uA
Table 5-4 Threshold Level for 1.8V Signaling
Table 5-5 Input Leakage Current for 1.8V Signaling
Parameter
Symbol
Min
Max.
Unit
Remarks
Input Leakage Current
-2
2
uA
DAT3 pull-up is
disconnected.
Parameter
Symbol
Min.
Max
Unit
Condition
Supply Voltage
VDD
2.7
3.6
V
Regulator Voltage
VDDIO
1.7
1.95
V
Generated by
VDD
Output High Voltage
VOH
1.4
-
V
IOH=-2mA
Output Low Voltage
VOL
-
0.45
V
IOL=2mA
Input High Voltage
VIH
1.27
2.00
V
Input Low Voltage
VIL
Vss-0.3
0.58
V
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 16
5.2.2. Bus Signal Line Load
Figure 5-1 Bus Circuitry Diagram
Bus Operation Conditions – Signal Line’s Load
Total Bus Capacitance = CHOST + CBUS + N CCARD
Parameter
symbol
Min
Max
Unit
Remark
Pull-up resistance
RCMD
RDAT
10
100
kΩ
to prevent bus floating
Total bus capacitance for each
signal line
CL
40
pF
1 card
CHOST+CBUS shall
not exceed 30 pF
Card Capacitance for each signal
pin
CCAR
D
10
pF
Maximum signal line inductance
16
nH
Pull-up resistance inside card
(pin1)
RDAT
3
10
90
kΩ
May be used for card
detection
Capacity Connected to Power
Line
CC
5
uF
To prevent inrush current
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 17
5.2.3. Power Up Time
Host needs to keep power line level less than 0.5V and more than 1ms before power ramp up.
Power On or Power Cycle
Followings are requirements for Power on and Power cycle to assure a reliable SD Card hard
reset.
(1) Voltage level shall be below 0.5V.
(2) Duration shall be at least 1ms.
Power Supply Ramp Up
The power ramp up time is defined from 0.5V threshold level up to the operating supply voltage
which is stable between VDD (min.) and VDD (max.) and host can supply SDCLK.
Followings are recommendations of Power ramp up:
(1) Voltage of power ramp up should be monotonic as much as possible.
(2) The minimum ramp up time should be 0.1ms.
(3) The maximum ramp up time should be 35ms for 2.7-3.6V power supply.
Power Down and Power Cycle
(1) When the host shuts down the power, the card VDD shall be lowered to less than 0.5Volt for a
minimum period of 1ms. During power down, DAT, CMD, and CLK should be disconnected or
driven to logical 0 by the host to avoid a situation that the operating current is drawn through
the signal lines.
(2) If the host needs to change the operating voltage, a power cycle is required. Power cycle
means the power is turned off and supplied again. Power cycle is also needed for accessing
cards that are already in Inactive State. To create a power cycle the host shall follow the power
down description before power up the card (i.e. the card VDD shall be once lowered to less
than 0.5Volt for a minimum period of 1ms).
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 18
5.2.4. Power Up Time of Card
A device shall be ready to accept the first command within 1ms from detecting VDD min.Device
may use up to 74 clocks for preparation before receiving the first command.
Valid voltage range for
all commands
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 19
5.3. AC Characteristics
5.3.1. microSD Interface Timing (Default)
Parameter
Symbol
Min
Max
Unit
Remark
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data
Transfer Mode
fPP
0
25
MHz
Ccard≤10 pF
(1 card)
Clock frequency
Identification Mode
fOD
0(1)/100
400
kHz
Ccard≤10 pF
(1 card)
Clock low time
tWL
10
ns
Ccard≤10 pF
(1 card)
Clock high time
tWH
10
ns
Ccard≤10 pF
(1 card)
Clock rise time
tTLH
10
ns
Ccard≤10 pF
(1 card)
Clock fall time
tTHL
10
ns
Ccard≤10 pF
(1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time
tISU
5
ns
Ccard≤10 pF
(1 card)
Input hold time
tIH
5
ns
Ccard≤10 pF
(1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time
during Data Transfer
Mode
tODLY
0
14
ns
CL≤40 pF
(1 card)
Output Delay time
during Identification
Mode
tODLY
0
50
ns
CL≤40 pF
(1 card)
(1) 0Hz means to stop the clock. The given minimum frequency range is for cases were
continues clock is required.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 20
5.3.2. microSD Interface Timing (High-Speed Mode)
Parameter
Symbol
Min
Max
Unit
Remark
Clock CLK (All values are referred to min(VIH) and max(VIL)
Clock frequency Data
Transfer Mode
fPP
0
50
MHz
Ccard ≤ 10 pF (1 card)
Clock low time
tWL
7
ns
Ccard ≤ 10 pF (1 card)
Clock high time
tWH
7
ns
Ccard ≤ 10 pF (1 card)
Clock rise time
tTLH
3
ns
Ccard ≤ 10 pF (1 card)
Clock fall time
tTHL
3
ns
Ccard ≤ 10 pF (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time
tISU
6
ns
Ccard ≤ 10 pF (1 card)
Input hold time
tIH
2
ns
Ccard ≤ 10 pF (1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during
Data Transfer Mode
tODLY
14
ns
CL ≤ 40 pF (1 card)
Output Hold time
TOH
2.5
ns
CL ≤ 15 pF (1 card)
Total System capacitance
of each line¹
CL
40
pF
CL ≤ 15 pF (1 card)
(1) In order to satisfy severe timing, the host shall drive only one card.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 21
5.3.3. microSD Interface Timing (SDR12, SDR25 and SDR 50 Modes)
Input:
Symbol
Min
Max
Unit
Remark
tCLK
4.80
-
ns
208MHz (Max.), Between rising edge, VCT=
0.975V
tCR, tCF
-
0.2* tCLK
ns
tCR, tCF < 2.00ns (max.) at 100MHz,
CCARD=10pF
Clock
Duty
30
70
%
SDR50 SDR 104 Input Timing:
Symbol
Min
Max
Unit
SDR104 Mode
tIS
1.40
-
ns
CCARD =10pF, VCT= 0.975V
tIH
0.80
-
ns
CCARD =5pF, VCT= 0.975V
Symbol
Min
Max
Unit
SDR50 Mode
tIS
3.00
-
ns
CCARD =10pF, VCT= 0.975V
tIH
0.80
-
ns
CCARD =5pF, VCT= 0.975V
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 22
Output:
Symbol
Min
Max
Unit
Remark
tODLY
-
7.5
ns
tCLK>=10.0ns, CL=30pF, using driver Type B, for
SDR50
tODLY
-
14
ns
tCLK>=20.0ns, CL=40pF, using driver Type B, for
SDR25 and SDR12,
TOH
1.5
-
ns
Hold time at the tODLY (min.), CL=15pF
Output (SDR104 mode):
Symbol
Min
Max
Unit
Remark
tOP
-
2
UI
Card Output Phase
ΔtOP
-350
+1550
ps
Delay variable due to temperature change after tuning
tODW
0.60
-
UI
tODW = 2.88ns at 208MHz
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 23
5.3.4. microSD Interface Timing (DDR50 Mode)
Symbol
Min
Max
Unit
Remark
tCLK
20
-
ns
50MHz (Max.), Between rising edge
tCR, tCF
-
0.2* tCLK
ns
tCR, tCF < 4.00ns (max.) at 50MHz, CCARD=10pF
Clock Duty
45
55
%
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 24
Parameter
Symbol
Min
Max
Unit
Remark
Input CMD (referenced to CLK rising edge)
Input set-up time
tISU
6
-
ns
Ccard≤10 pF
(1 card)
Input hold time
tIH
0.8
-
ns
Ccard≤ 10 pF
(1 card)
Output CMD (referenced to CLK rising edge)
Output Delay time
during Data Transfer
Mode
tODLY
13.7
ns
CL≤30 pF
(1 card)
Output Hold time
TOH
1.5
-
ns
CL≥15 pF
(1 card)
Inputs DAT (referenced to CLK rising and falling edges)
Input set-up time
tISU2x
3
-
ns
Ccard≤10 pF
(1 card)
Input hold time
tIH2x
0.8
-
ns
Ccard≤10 pF
(1 card)
Outputs DAT (referenced to CLK rising and falling edges)
Output Delay time
during Data Transfer
Mode
tODLY2x
-
7.0
ns
CL≤25 pF
(1 card)
Output Hold time
TOH2x
1.5
-
ns
CL≥15 pF
(1 card)
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 25
6. INTERFACE
6.1. Pad Assignment and Descriptions
pin
SD Mode
SPI Mode
Name
Type1
Description
Name
Type
Description
1
DAT2
I/O/PP
Data Line[bit2]
RSV
2
CD/DAT3
2
I/O/PP
3
Card Detect/
Data Line[bit3]
CS
I 3
Chip Select
(neg true)
3
CMD
PP
Command/Response
DI
I
Data In
4
VDD
S
Supply voltage
VDD
S
Supply voltage
5
CLK
I
Clock
SCLK
I
Clock
6
VSS
S
Supply voltage
ground
VSS
S
Supply voltage
ground
7
DAT0
I/O/PP
Data Line[bit0]
DO
O/PP
Data Out
8
DAT1
I/O/PP
Data Line[bit1]
RSV
(1) S: power supply, I: input; O: output using push-pull drivers; PP:I/O using push-pull drivers
(2) The extended DAT lines (DAT1-DAT3)are input on power up. They start to operate as DAT
lines after SET_BUS_WIDTH command. The Host shall keep its own DAT1-DAT3 lines in
input mode, as well, while they are not used. It is defined so, in order to keep compatibility
to MultiMedia Cards.
(3) At power up this line has a 50KOhm pull up enabled in the card. This resistor serves two
functions Card detection and Mode Selection. For Mode Selection, the host can drive the
line high or let it be pulled high to select SD mode. If the host wants to select SPI mode it
should drive the line low. For Card detection, the host detects that the line is pulled high.
This pull-up should be disconnected by the user during regular data transfer period, with
SET_CLR_CARD_DETECT (ACMD42) command.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 26
Name
Width
Description
CID
128bit
Card identification number; card individual number for identification.
Mandatory
RCA1
16bit
Relative card address; local system address of a card, dynamically
suggested by the card and approved by the host during initialization.
Mandatory
DSR
16bit
Driver Stage Register; to configure the card’s output drivers.
Optional
CSD
128bit
Card Specific Data; information about the card operation conditions.
Mandatory
SCR
64bit
SD Configuration Register; information about the SD Memory Card's
Special Features capabilities Mandatory
OCR
32bit
Operation conditions register. Mandatory.
SSR
512bit
SD Status; information about the card proprietary features
Mandatory
OCR
32bit
Card Status; information about the card status
Mandatory
(1) RCA register is not used (or available) in SPI mode.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 27
7. SMART
7.1. Direct Host Access to SMART Data via SD General Command (CMD56)
CMD 56 is structured as a 32-bit argument. The implementation of the general purpose functions
will arrange the CMD56 argument into the following format:
[31:24] [23:16] [15:18] [7:1] [0]
Argument #3
Argument #2
Argument #1
Index
“1/0”
Bit [0] Indicates Read Mode when bit is set to [1] or Write Mode when bit is cleared [0].
Depending on the function, either Read Mode or Write Mode can be used.
Bit [7:1] Indicates the index of the function to be executed:
- Read Mode
▪ Index = 0x10 Get SMART Command Information
- Write Mode
▪ Index = 0x08 Pre-Load SMART Command Information
Bit [15:8] Function argument #1 (1-byte)
Bit [23:16] Function argument #2 (1-byte)
Bit [31:24] Function argument #3 (1-byte)
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 28
7.1.1. Process for Retrieving SMART Data
STEP 1:
Write Mode – [0x08] Pre-Load SMART Command Information
Sequence
Command
Argument
Expected Data
Pre-Load
SMART
Command
Information
CMD56
[0] “0” (Write Mode)
[1:7] “0001 000”
(Index = 0x08)
[8:511] All ‘0’ Reserved)
No Expected Data
STEP 2:
Read Mode – [0x10] Get SMART Command Information
Sequence
Command
Argument
Expected Data
Get SMART
Command
Information
CMD56
[0] “1” (Read Mode)
[1:7] “0010 000”
(Index = 0x10)
[8:511] All ‘0’ Reserved)
1 sector (512 bytes) of response data
Byte [0-8] Flash ID
Byte [9-10] IC Version
Byte [11-12] FW Version
Byte [13] Reserved
Byte [14] CE Number
Byte [15] Reserved
Byte [16-17] Maximum Bad Block Replacement
Byte [18] Reserved
Byte [32-63] Bad Block Count per CE
Byte [64-65] Good Block Rate (%)
Byte [66-79] Reserved
Byte [80-83] Total Erase Count
Byte [84-95] Reserved
Byte [96-97] Calculated Remaining Life (%)
Byte [98-99] Average Erase Count
Byte [100-101] Minimum Erase Count
Byte [102-103] Maximum Erase Count
Byte [104-111] Reserved
Byte [112-115] Power Cycle Count
Byte [116-127] Reserved
Byte [128-129] Abnormal Power Down Count
Byte [130-159] Reserved
Byte [160-161] Total Refresh Count
Byte [176-183] Product “Marker”
Byte [184-511] Reserved
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 29
Note: Both steps are required to retrieve SMART data - Pre-Load SMART Command
followed by Get SMART Command, and must be in accordance with the SD Association
standard flowchart for CMD56 (below.)
Extracted from the SD Specifications Part 1 Physical Layer Simplified Specification Version 3.01.
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 30
7.1.2. Definitions for Response Data Bytes
Response Data Description
Flash ID NAND Flash Type
IC Version Controller Version
FW Version Firmware Version
CE Number Number of chip enables active
Maximum Bad Block Replacement Number of spare blocks remaining
Bad Block Count per CE Number of initial & new bad blocks per chip enable
Good Block Rate (%) Percent of total blocks that are still marked good
Total Erase Count Total number of block erases at the card level
Calculated Remaining Card Life [(Rated P/E cycles – Current Erase Count) / Rated P/E Cycles] * 100%
Average Erase Count Average erase count over all blocks
Minimum Erase Count Minimum erase count over all blocks
Maximum Erase Count Maximum erase count over all blocks
Power Cycle Count Number of normal power up sequences
Abnormal Power Down Count Number of unexpected power interruptions
Total Refresh Count Total read refresh count
Product “Marker” Product type
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 31
7.2. Direct Host Access via DLL for Windows or Linux Operating
Systems
Note: Card must be in Idle state before and while accessing card as per steps below.
API entry:
int Get_Smart_Data(char drive_letter, unsigned char *buffer, int buffer_len, int *bytes_read);
Arguments:
1: Drive letter is a character of the drive letter, i.e. ‘E’
2: buffer is a pointer to a pre-allocated array to store SMART data, min 512 bytes
3: buffer_len indicates to the API the size of the buffer, typically it is 512 bytes
4: bytes_read indicates the number of bytes returned in the buffer
Return Value:
0 is success; Non zero is fail, with the following definitions:
1: "Initial Command Flow Fail"
2: "Read Capacity Fail"
3: "Switch To Vendor Mode Fail"
4: "Send Smart Info Command Fail"
5: "Get Command Response Fail"
6: "Command Response Info Incorrect"
7: "Read Command Info Fail"
8: "Check Command State Fail"
9: "Close Command Flow Fail"
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 32
7.3. Access via Delkin SMART Dashboard Utility
Delkin customers will be able to download the Delkin SMART dashboard utility (for Windows OS
only) at www.delkinindustrial.com on the Engineering Specification page, or by contacting your
Delkin Devices Account Manager. SMART data is accessed by inserting a card in a USB reader
or directly in a laptop SD slot (with an SD adapter.) Below is a screen shot of the dashboard with
sample data:
Instructions for use:
1. Insert microSD in card reader or in SD slot on laptop (in SD adapter)
2. Select appropriate drive letter on Dashboard
3. Click “Go”
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 33
7.3.1. Dashboard Field Descriptions
Response Data Description
FW Version Firmware Version
Total Refresh Count Total read refresh count
Total Power Up Count Number of normal power up sequences
Abnormal Power Off Number of unexpected power interruptions
Average Erase Count Average erase count over all blocks
Maximum Erase Count Maximum erase count over all blocks
Total Erase Count Total number of block erases at the card level
Erase Endurance Flash program / erase cycle rating per block
Endurance Life Ratio [(Rated P/E cycles – Current Erase Count) / Rated P/E Cycles] * 100%
Good Block Ratio Percent of total blocks that are still marked good
Remaining Spare Block Count Number of spare blocks remaining
Bad Block Scan - Initial (per die) Bad blocks in flash from inception, prior to card use
Bad Block Scan - New (per die) Bad blocks created after card use
Utility microSD L500650 Rev. GV
© 2019 | Delkin Devices Inc. 34
8. PHYSICAL DIMENSIONS
Dimension
Value
Length
15mm ± 0.1mm
Width
11mm ± 0.1mm
Thickness
1mm ± 0.1mm
Refer to SD Association microSD Addendum standard for further
dimensional details. https://www.sdcard.org/
WARNING: This product may contain chemicals known to the State of California to cause cancer,
birth defects, or other reproductive harm. For more information go to www.p65warnings.ca.gov.
