RB731U Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Each envelope contains three diodes. Features * available in SMD6 (IMD, SC-59) package * part marking, D3P Applications * general detection circuits high speed switching Note: Care must be taken when installing and in operation to protect these diodes from static electricity. Absolute maximum ratings (T, = 25C) Dimensions (Units : mm) 2.9+0.2 +0? ee 0.8+0.1 1.9+0.2 0,95 0.95 yy fy ry a q- is 6d] oO | o~0. | = | Fo OTe 42 a 0.379-4. | 1.9 | 0.95,0.95 : 0.451036 0.95,0.45 i I O08 : ~0.6 0.15 ~S-bel, '5olo6)) |" Qo 4 : : 2. oO bo 4 hoe 0.8 Min Parameter Symbol Limits Unit Conditions Peak reverse voltage Vam 25 V DC reverse voltage Vr 20 Vv Mean rectifying current lo 30 mA Peak forward surge Irom 200 mA |At60Hz for 1 cycle Junction temperature T; 125 C Storage temperature Tstg ~40 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol} Min |Typical) Max Unit Conditions Forward voltage Ve 0.26 0.37 Vv le =1.0mA Reverse current IR 0.11 1 HA |VR=10V Capacitance between _ _ terminals C 2.0 pF |VR=1V,f=1MHz Diodes Roum 185 RB731U Schottky barrier diodes Electrical characteristic curves lE 400 u Typ. pulse measurement 1 ~ <4 oom < Wu a = - 10m a 5 = Iu ry) bi o ing xc im 3 8 a wu 100 % 100 w 2 Ww z 5 ive} & 10 yu a 10n Va Tn 0 0.4 . 0 0 FORWARD VOLTAGE : Vr iv: REVERSE VOLTAGE : Vx iV! Figure 1 Figure 2 2 4 6 8 0 REVERSE VOLTAGE | Va (Vv) Figure 3 CAPACITANCE BETWEEN TERMINALS : Cr (pF) o 186 RONM Diodes