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Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
Data Sheet
www.microchip.com
Features
Firmware Hub for Intel 8xx Chipsets
8 Mbit SuperFlash memory array for code/data
storage
1024K x8
Flexible Erase Capability
Uniform 4 KByte Sectors
Uniform 64 KByte overlay blocks
64 KByte Top Boot Block protection
Chip-Erase for PP Mode Only
Single 3.0-3.6V Read and Write Operations
Superior Reliability
Endurance:100,000 Cycles (typical)
Greater than 100 years Data Retention
Low Power Consumption
Active Read Current: 6 mA (typical)
Standby Current: 10 µA (typical)
Fast Sector-Erase/Byte-Program Operation
Sector-Erase Time: 18 ms (typical)
Block-Erase Time: 18 ms (typical)
Chip-Erase Time: 70 ms (typical)
Byte-Program Time: 14 µs (typical)
Chip Rewrite Time: 15 seconds (typical)
Single-pulse Program or Erase
Internal timing generation
Two Operational Modes
Firmware Hub Interface (FWH) Mode for
In-System operation
Parallel Programming (PP) Mode for fast
production programming
Firmware Hub Hardware Interface Mode
5-signal communication interface supporting byte Read
and Write
33 MHz clock frequency operation
WP# and TBL# pins provide hardware write
protect for entire chip and/or top Boot Block
Block Locking Register for all blocks
Standard SDP Command Set
Data# Polling and Toggle Bit for End-of-Writedetection
5 GPI pins for system design flexibility
4 ID pins for multi-chip selection
Parallel Programming (PP) Mode
11-pin multiplexed address and
8-pin data I/O interface
Supports fast In-System or PROM programming for
manufacturing
CMOS and PCI I/O Compatibility
Packages Available
32-lead PLCC
32-lead TSOP (8mm x 14mm)
40-lead TSOP (10mm x 20mm)
Non-Pb (lead-free) packages available
All non-Pb (lead-free) devices are RoHS compliant
8 Mbit Firmware Hub
SST49LF008A
The SST49LF008A flash memory devices are designed to be read-compatible
with the Intel® 82802 Firmware Hub (FWH) device for PC-BIOS application.
These devices provide protection for the storage and update of code and data in
addition to adding system design flexibility through five general purpose inputs.
Two interface modes are supported by the SST49LF008A: Firmware Hub (FWH)
Interface mode for in-system programming and Parallel Programming (PP) mode
for fast factory programming of PC-BIOS applications.
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Product Description
The SST49LF008A flash memory devices are designed to be read-compatible with the Intel® 82802
Firmware Hub (FWH) device for PC-BIOS application. These devices provide protection for the storage
and update of code and data in addition to adding system design flexibility through five general pur-
pose inputs. Two interface modes are supported by the SST49LF008A: Firmware Hub (FWH) Interface
mode for in-system programming and Parallel Programming (PP) mode for fast factory programming of
PC-BIOS applications.
The SST49LF008A flash memory devices are manufactured with SST’s proprietary, high performance
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reli-
ability and manufacturability compared with alternate approaches. The SST49LF008A devices signifi-
cantly improve performance and reliability, while lowering power consumption.
The SST49LF008A devices write (Program or Erase) with a single 3.0-3.6V power supply. They use
less energy during Erase and Program than alternative flash memory technologies. The total energy
consumed is a function of the applied voltage, current and time of application. Since for any given volt-
age range, the SuperFlash technology uses less current to program and has a shorter Erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash memory
technologies. The SST49LF008A products provide a maximum Byte-Program time of 20 µsec. The
entire memory can be erased and programmed byte-by-byte typically in 15 seconds when using status
detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation.
The SuperFlash technology provides fixed Erase and Program times independent of the number of
Erase/Program cycles performed. Therefore the system software or hardware does not have to be cal-
ibrated or correlated to the cumulated number of Erase/Program cycles as is necessary with alterna-
tive flash memory technologies, whose Erase and Program time increase with accumulated Erase/
Program cycles.
To protect against inadvertent write, the SST49LF008A devices employ hardware and software data
(SDP) protection schemes. It is offered with typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
To meet high density, surface mount requirements, the SST49LF008A devices are offered in a 32-lead
TSOP package. In addition, the SST49LF008A is offered in 32-lead PLCC and 40-lead TSOP pack-
ages. See Figures 2, 3, and 4 for pin assignments and Table 1 for pin descriptions.
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Functional Block Diagram
Figure 1: Functional Block Diagram
1161 B1.2
Y-Decoder
I/O Buffers and Data Latches
Address Buffers Latches
X-Decoder SuperFlash
Memory
Control Logic
CLK
RST#
IC
FGPI[4:0]
Programmer
Interface
WP#
TBL#
INIT#
ID[3:0]
FWH4
R/C#
OE#
WE#
A[10:0]
DQ[7:0]
FWH[3:0]
FWH
Interface
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8 Mbit Firmware Hub
SST49LF008A
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Pin Assignments
Figure 2: Pin Assignments for 32-lead TSOP (8mm x 14mm)
Figure 3: Pin Assignments for 32-lead PLCC
NC
NC
NC
VSS (VSS)
IC (IC)
A10 (FGPI4)
R/C# (CLK)
VDD (VDD)
NC
RST# (RST#)
A9 (FGPI3)
A8 (FGPI2)
A7 (FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE# (INIT#)
WE# (FWH4)
VDD (VDD)
DQ7 (RES)
DQ6 (RES)
DQ5 (RES)
DQ4 (RES)
DQ3 (FWH3)
VSS (VSS)
DQ2 (FWH2)
DQ1 (FWH1)
DQ0 (FWH0)
A0 (ID0)
A1 (ID1)
A2 (ID2)
A3 (ID3)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1161 32-tsop P1.0
Standard Pinout
Top View
Die Up
( ) Designates FWH Mode
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7(FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
A3 (ID3)
A2 (ID2)
A1 (ID1)
A0 (ID0)
DQ0 (FWH0)
IC (IC)
VSS (VSS)
NC
NC
VDD (VDD)
OE# (INIT#)
WE# (FWH4)
NC
DQ7 (RES)
4 3 21323130
A8 (FGPI2)
A9 (FGPI3)
RST# (RST#)
NC
VDD (VDD)
R/C# (CLK)
A10 (FGPI4)
32-lead PLCC
Top View
1161 32-plcc P2.3
14 15 16 17 18 19 20
DQ1 (FWH1)
DQ2 (FWH2)
VSS (VSS)
DQ3 (FWH3)
DQ4 (RES)
DQ5 (RES)
DQ6 (RES)
( ) Designates FWH Mode
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 4: Pin Assignments for 40-lead TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1232 40-tsop P1.0
Standard Pinout
Top View
Die Up
NC (NC)
IC (IC)
NC (NC)
NC (NC)
NC (NC)
NC (NC)
A10 (FGPI4)
NC (NC)
R/C# (CLK)
VDD
NC (NC)
RST# (RST#)
NC (NC)
NC (NC)
A9 (FGPI3)
A8 (FGPI2)
A7 (FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
VSS
VDD
(FWH4) WE#
(INIT#) OE#
(NC) NC
(RES) DQ7
(RES) DQ6
(RES) DQ5
(RES) DQ4
(NC) NC
VSS
VSS
(FWH3) DQ3
(FWH2) DQ2
(FWH1) DQ1
(FWH0) DQ0
(ID0) A0
(ID1) A1
(ID2) A2
(ID3) A3
( ) Designates FWH Mode
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Table 1: Pin Description
Symbol Pin Name Type1
Interface
FunctionsPP FWH
A10-A0Address I X Inputs for low-order addresses during Read and Write opera-
tions. Addresses are internally latched during a Write cycle. For
the programming interface, these addresses are latched by R/
C# and share the same pins as the high-order address inputs.
DQ7-DQ0Data I/O X To output data during Read cycles and receive input data during
Write cycles. Data is internally latched during a Write cycle. The
outputs are in tri-state when OE# is high.
OE# Output Enable I X To gate the data output buffers
WE# Write Enable I X To control the Write operations
IC Interface
Configuration
Pin
I X X This pin determines which interface is operational. When held
high, programmer mode is enabled and when held low, FWH
mode is enabled. This pin must be setup at power-up or before
return from reset and not change during device operation. This pin
is internally pulled- down with a resistor between 20-100 K
INIT# Initialize I X This is the second reset pin for in-system use. This pin is inter-
nally combined with the RST# pin; If this pin or RST# pin is
driven low, identical operation is exhibited.
ID[3:0] Identification
Inputs
I X These four pins are part of the mechanism that allows multiple
parts to be attached to the same bus. The strapping of these
pins is used to identify the component.The boot device must
have ID[3:0]=0000 and it is recommended that all subsequent
devices should use sequential up-count strapping. These pins
are internally pulled-down with a resistor between 20-100 K
FGPI[4:0] General Pur-
pose Inputs
I X These individual inputs can be used for additional board flexibil-
ity. The state of these pins can be read through GPI_REG regis-
ter. These inputs should be at their desired state before the start
of the PCI clock cycle during which the read is attempted, and
should remain in place until the end of the Read cycle. Unused
GPI pins must not be floated.
TBL# Top Block Lock I X When low, prevents programming to the Boot Block sectors at top of
memory. When TBL# is high it disables hardware write protection for
the top block sectors. This pin cannot be left unconnected.
FWH[3:0] FWH I/Os I/O X I/O Communications
CLK Clock I X To provide a clock input to the control unit
FWH4 FWH Input I X Input Communications
RST# Reset I X X To reset the operation of the device
WP# Write Protect I X When low, prevents programming to all but the highest address-
able blocks. When WP# is high it disables hardware write protec-
tion for these blocks. This pin cannot be left unconnected.
R/C# Row/Column
Select
I X Select For the Programming interface, this pin determines whether
the address pins are pointing to the row addresses, or to the column
addresses.
RES Reserved X These pins must be left unconnected.
VDD Power Supply PWR X X To provide power supply (3.0-3.6V)
VSS Ground PWR X X Circuit ground (OV reference) All VSS pins must be grounded.
NC No Connection I X X Unconnected pins
T1.4 25085
1. I = Input, O = Output
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8 Mbit Firmware Hub
SST49LF008A
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Microchip Technology Company
Device Memory Map
Figure 5: Device Memory Map for SST49LF008A
0FFFFFH
0F0000H
0EFFFFH
0E0000H
0DFFFFH
0D0000H
0CFFFFH
0C0000H
0BFFFFH
0B0000H
0AFFFFH
0A0000H
09FFFFH
090000H
08FFFFH
080000H
07FFFFH
070000H
06FFFFH
060000H
05FFFFH
050000H
04FFFFH
040000H
03FFFFH
030000H
02FFFFH
020000H
01FFFFH
010000H
00FFFFH
Block 7
Block 8
Block 6
Block 5
Block 4
Block 3
Block 2
Block 1
Block 15
Block 14
Block 13
Block 12
Block 11
Block 10
Block 9
Block 0
(64 KByte)
1161 F08.0
WP# for
Block 0 14
TBL#
4 KByte Sector 1
4 KByte Sector 2
4 KByte Sector 15
4 KByte Sector 0
Boot Block
002000H
001000H
000000H
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Design Considerations
SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible
between VDD and VSS less than 1 cm away from the VDD pin of the device. Additionally, a low fre-
quency 4.7 µF electrolytic capacitor from VDD to VSS should be placed within 1 cm of the VDD pin. If you
use a socket for programming purposes add an additional 1-10 µF next to each socket.
The RST# pin must remain stable at VIH for the entire duration of an Erase operation. WP# must
remain stable at VIH for the entire duration of the Erase and Program operations for non-Boot Block
sectors. To write data to the top Boot Block sectors, the TBL# pin must also remain stable at VIH for the
entire duration of the Erase and Program operations.
Product Identification
The product identification mode identifies the device as the SST49LF008A and manufacturer as SST.
Mode Selection
The SST49LF008A flash memory devices can operate in two distinct interface modes: the Firmware
Hub Interface (FWH) mode and the Parallel Programming (PP) mode. The IC (Interface Configuration
pin) is used to set the interface mode selection. If the IC pin is set to logic High, the device is in PP
mode; while if the IC pin is set Low, the device is in the FWH mode. The IC selection pin must be con-
figured prior to device operation. The IC pin is internally pulled down if the pin is not connected. In
FWH mode, the device is configured to interface with its host using Intel’s Firmware Hub proprietary
protocol. Communication between Host and the SST49LF008A occurs via the 4-bit I/O communication
signals, FWH [3:0] and the FWH4. In PP mode, the device is programmed via an 11-bit address and
an 8-bit data I/O parallel signals. The address inputs are multiplexed in row and column selected by
control signal R/C# pin. The column addresses are mapped to the higher internal addresses, and the
row addresses are mapped to the lower internal addresses. See the Device Memory Map in Figure 5
for address assignments.
Table 2: Product Identification
Byte Data
JEDEC ID
Address
Location
Manufacturer’s ID 0000H BFH FFBC0000H
Device ID
SST49LF008A 0001H 5AH FFBC0001H
T2.7 25085
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Firmware Hub (FWH) Mode
Device Operation
The FWH mode uses a 5-signal communication interface, FWH[3:0] and FWH4, to control operations
of the SST49LF008A. Operations such as Memory Read and Memory Write uses Intel FWH propriety
protocol. JEDEC Standard SDP (Software Data Protection) Byte-Program, Sector-Erase and Block-
Erase command sequences are incorporated into the FWH memory cycles. Chip-Erase is only avail-
able in PP Mode.
The device enters standby mode when FWH4 is high and no internal operation is in progress. The
device is in ready mode when FWH4 is low and no activity is on the FWH bus.
Firmware Hub Interface Cycles
Addresses and data are transferred to and from the SST49LF008A by a series of “fields,” where each
field contains 4 bits of data. SST49LF008A supports only single-byte Read and Write, and all fields are
one clock cycle in length. Field sequences and contents are strictly defined for Read and Write opera-
tions. Addresses in this section refer to addresses as seen from the SST49LF008A’s “point of view,”
some calculation will be required to translate these to the actual locations in the memory map (and
vice versa) if multiple memory devices are used on the bus. Tables 3 and 4 list the field sequences for
Read and Write cycles.
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Figure 6: Single-Byte Read Waveforms
Table 3: FWH Read Cycle
Clock
Cycle
Field
Name
Field Contents
FWH[3:0]1
FWH[3:0]
Direction Comments
1 START 1101 IN FWH4 must be active (low) for the part to respond. Only the
last start field (before FWH4 transitions high) should be recog-
nized. The START field contents indicate a FWH memory
Read cycle.
2 IDSEL 0000 to 1111 IN Indicates which FWH device should respond. If the to IDSEL (ID
select) field matches the value ID[3:0], then that particular device will
respond to the whole bus cycle.
3-9 IMADDR YYYY IN These seven clock cycles make up the 28-bit memory address.
YYYY is one nibble of the entire address. Addresses are trans-
ferred most-significant nibble first.
10 IMSIZE 0000 (1 byte) IN A field of this size indicates how many bytes will be or trans-
ferred during multi-byte operations. The SST49LF008A will only
support single-byte operation. IMSIZE=0000b
11 TAR0 1111 IN
then Float
In this clock cycle, the master (Intel ICH) has driven the bus
then float to all ‘1’s and then floats the bus, prior to the next
clock cycle. This is the first part of the bus “turnaround cycle.”
12 TAR1 1111 (float) Float
then OUT
The SST49LF008A takes control of the bus during this cycle.
During the next clock cycle, it will be driving “sync data.”
13 RSYNC 0000 (READY) OUT During this clock cycle, the FWH will generate a “ready-sync”
(RSYNC) indicating that the least-significant nibble of the least-
significant byte will be available during the next clock cycle.
14 DATA YYYY OUT YYYY is the least-significant nibble of the least-significant data byte.
15 DATA YYYY OUT YYYY is the most-significant nibble of the least-significant data byte.
16 TAR0 1111 OUT
then Float
In this clock cycle, the SST49LF008A has driven the bus to all
ones and then floats the bus prior to the next clock cycle. This
is the first part of the bus “turnaround cycle.”
17 TAR1 1111 (float) Float then
IN
The master (Intel ICH) resumes control of the bus during this
cycle.
T3.3 25085
1. Field contents are valid on the rising edge of the present clock cycle.
CLK
FWH4
FWH[3:0]
1161 F09.0
STR TAR RSYNCIMSIMADDRIDS DATA TAR
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Figure 7: Write Waveforms
Table 4: FWH Write Cycle
Clock
Cycle
Field
Name
Field Contents
FWH[3:0]1
FWH[3:0]
Direction Comments
1 START 1110 IN FWH4 must be active (low) for the part to respond. Only
the last start field (before FWH4 transitions high) should
be recognized. The START field contents indicate a FWH
memory Read cycle.
2 IDSEL 0000 to 1111 IN Indicates which SST49LF008A device should respond.
If the IDSEL (ID select) field matches the value
ID[3:0], then that particular device will respond to the
whole bus cycle.
3-9 IMADDR YYYY IN These seven clock cycles make up the 28-bit memory
address. YYYY is one nibble of the entire address.
Addresses are transferred most-significant nibble first.
10 IMSIZE 0000 (1 byte) IN This size field indicates how many bytes will be trans-
ferred during multi-byte operations. The FWH only
supports single-byte writes. IMSIZE=0000b
11 DATA YYYY IN This field is the least-significant nibble of the data byte.
This data is either the data to be programmed into the
flash memory or any valid flash command.
12 DATA YYYY IN This field is the most-significant nibble of the data byte.
13 TAR0 1111 IN then Float In this clock cycle, the master (Intel ICH) has driven the
then float bus to all ‘1’s and then floats the bus prior to
the next clock cycle. This is the first part of the bus “turn-
around cycle.”
14 TAR1 1111 (float) Float then OUT The SST49LF008A takes control of the bus during this
cycle. During the next clock cycle it will be driving the
“sync” data.
15 RSYNC 0000 OUT The SST49LF008A outputs the values 0000, indicating
that it has received data or a flash command.
16 TAR0 1111 OUT then Float In this clock cycle, the SST49LF008A has driven the bus
to all then float ‘1’s and then floats the bus prior to the
next clock cycle. This is the first part of the bus “turn-
around cycle.”
17 TAR1 1111 (float) Float then IN The master (Intel ICH) resumes control of the bus during this
cycle.
T4.4 25085
1. Field contents are valid on the rising edge of the present clock cycle.
CLK
FWH4
FWH[3:0]
1161 F10.0
STR DATA TARTA R
RSYNC
IMSIMADDRIDS
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8 Mbit Firmware Hub
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Abort Mechanism
If FWH4 is driven low for one or more clock cycles during a FWH cycle, the cycle will be terminated
and the device will wait for the ABORT command. The host may drive the FWH[3:0] with ‘1111b’
(ABORT command) to return the device to Ready mode. If abort occurs during a Write operation, the
data may be incorrectly altered.
Response To Invalid Fields
During FWH operations, the FWH will not explicitly indicate that it has received invalid field sequences.
The response to specific invalid fields or sequences is as follows:
Address out of range:
The FWH address sequence is 7 fields long (28 bits), but only the last five address fields (20 bits) will
be decoded by SST49LF008A.
Address A22 has the special function of directing reads and writes to the flash core (A22=1) or to the
register space (A22=0).
Invalid IMSIZE field:
If the FWH receives an invalid size field during a Read or Write operation, the device will reset and no
operation will be attempted. The SST49LF008A will not generate any kind of response in this situation.
Invalid-size fields for a Read/Write cycle are anything but 0000b.
Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of
device memory in the SST49LF008A. The TBL# pin is used to write protect 16 boot sectors (64 KByte)
at the highest flash memory address range for the SST49LF008A. WP# pin write protects the remain-
ing sectors in the flash memory.
An active low signal at the TBL# pin prevents Program and Erase operations of the top boot sectors.
When TBL# pin is held high, write protection of the top boot sectors is then determined by the Boot
Block Locking register. The WP# pin serves the same function for the remaining sectors of the device
memory. The TBL# and WP# pins write protection functions operate independently of one another.
Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or
Erase operation. A logic level change occurring at the TBL# or WP# pin during a Program or Erase
operation could cause unpredictable results. TBL# and WP# pins cannot be left unconnected.
TBL# is internally OR’ed with the top Boot Block Locking register. When TBL# is low, the top Boot
Block is hardware write protected regardless of the state of the Write-Lock bit for the Boot Block Lock-
ing register. Clearing the Write-Protect bit in the register when TBL# is low will have no functional
effect, even though the register may indicate that the block is no longer locked.
WP# is internally OR’ed with the Block Locking register. When WP# is low, the blocks are hardware
write protected regardless of the state of the Write-Lock bit for the corresponding Block Locking regis-
ters. Clearing the Write-Protect bit in any register when WP# is low will have no functional effect, even
though the register may indicate that the block is no longer locked.
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Reset
AV
IL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function inter-
nally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initial-
ization.
During a Read operation, driving INIT# or RST# pins low deselects the device and places the output
drivers, FWH[3:0], in a high-impedance state. The reset signal must be held low for a minimal duration
of time TRSTP. A reset latency will occur if a reset procedure is performed during a Program or Erase
operation. See Table 19, Reset Timing Parameters for more information. A device reset during an
active Program or Erase will abort the operation and memory contents may become invalid due to data
being altered or corrupted from an incomplete Erase or Program operation.
Write Operation Status Detection
The SST49LF008A device provides two software means to detect the completion of a Write (Program
or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two
status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is incorpo-
rated into the FWH Read cycle. The actual completion of the nonvolatile write is asynchronous with the
system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ7or DQ6. In order to prevent spurious rejection, if an erroneous result
occurs, the software routine should include a loop to read the accessed location an additional two (2)
times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is
valid.
Data# Polling (DQ7)
When the SST49LF008A device is in the internal Program operation, any attempt to read DQ7will pro-
duce the complement of the true data. Once the Program operation is completed, DQ7will produce
true data. Note that even though DQ7may have valid data immediately following the completion of an
internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data
bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase
operation, any attempt to read DQ7will produce a ‘0’. Once the internal Erase operation is completed,
DQ7will produce a ‘1’. Proper status will not be given using Data# Polling if the address is in the invalid
range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6will produce
alternating ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation
is completed, the toggling will stop.
Multiple Device Selection
The four ID pins, ID[3:0], allow multiple devices to be attached to the same bus by using different ID
strapping in a system. When the SST49LF008A is used as a boot device, ID[3:0] must be strapped as
0000, all subsequent devices should use a sequential up-count strapping (i.e. 0001, 0010, 0011, etc.).
The SST49LF008A will compare the strapping values, if there is a mismatch, the device will ignore the
remainder of the cycle and go into standby mode. For further information regarding FWH device map-
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ping and paging, please refer to the Intel 82801(ICH) I/O Controller Hub documentation. Since there is
no ID support in PP Mode, to program multiple devices a stand-alone PROM programmer is recom-
mended.
Registers
There are three types of registers available on the SST49LF008A, the General Purpose Inputs regis-
ter, Block Locking registers and the JEDEC ID registers. These registers appear at their respective
address location in the 4 GByte system memory map. Unused register locations will read as 00H.
Attempts to read or write to any registers during internal Write operations will be ignored.
General Purpose Inputs Register
The GPI_REG (General Purpose Inputs Register) passes the state of FGPI[4:0] pins at power-up on
the SST49LF008A. It is recommended that the FGPI[4:0] pins are in the desired state before FWH4 is
brought low for the beginning of the bus cycle, and remain in that state until the end of the cycle. There
is no default value since this is a pass-through register. The GPI register for the boot device appears at
FFBC0100H in the 4 GByte system memory map, and will appear elsewhere if the device is not the
boot device. Register is not available for read when the device is in Erase/Program operation. See
Table 5 for the GPI_REG bits and function.
Table 5: General Purpose Inputs Register
Bit Function
Pin #
32-PLCC 32-TSOP 40-TSOP
7:5 Reserved - - -
4 FGPI[4]
Reads status of general
purpose input pin
30 6 7
3 FGPI[3]
Reads status of general
purpose input pin
31115
2 FGPI[2]
Reads status of general
purpose input pin
41216
1 FGPI[1]
Reads status of general
purpose input pin
51317
0 FGPI[0]
Reads status of general
purpose input pin
61418
T5.3 25085
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Block Locking Registers
SST49LF008A provides software controlled lock protection through a set of Block Locking registers.
The Block Locking Registers are read/write registers and it is accessible through standard addressable
memory locations specified in Table 6. Unused register locations will read as 00H.
Table 6: Block Locking Registers for SST49LF008A1
1. Default value at power up is 01H
Register Block Size Protected Memory Address Range Memory Map Register Address
T_BLOCK_LK 64K 0FFFFFH - 0F0000H FFBF0002H
T_MINUS01_LK 64K 0EFFFFH - 0E0000H FFBE0002H
T_MINUS02_LK 64K 0DFFFFH - 0D0000H FFBD0002H
T_MINUS03_LK 64K 0CFFFFH - 0C0000H FFBC0002H
T_MINUS04_LK 64K 0BFFFFH - 0B0000H FFBB0002H
T_MINUS05_LK 64K 0AFFFFH - 0A0000H FFBA0002H
T_MINUS06_LK 64K 09FFFFH - 090000H FFB90002H
T_MINUS07_LK 64K 08FFFFH - 080000H FFB80002H
T_MINUS08_LK 64K 07FFFFH - 070000H FFB70002H
T_MINUS09_LK 64K 06FFFFH - 060000H FFB60002H
T_MINUS10_LK 64K 05FFFFH - 050000H FFB50002H
T_MINUS11_LK 64K 04FFFFH - 040000H FFB40002H
T_MINUS12_LK 64K 03FFFFH - 030000H FFB30002H
T_MINUS13_LK 64K 02FFFFH - 020000H FFB20002H
T_MINUS14_LK 64K 01FFFFH -010000H FFB10002H
T_MINUS15_LK 64K 00FFFFH - 000000H FFB00002H
T6.4 25085
Table 7: Block Locking Register Bits
Reserved Bit [7..2] Lock-Down Bit [1] Write-Lock Bit [0] Lock Status
000000 0 0 Full Access
000000 0 1 Write Locked (Default State at Power-Up)
000000 1 0 Locked Open (Full Access Locked Down)
000000 1 1 Write Locked Down
T7.3 25085
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Write Lock
The Write-Lock bit, bit 0, controls the lock state described in Table 7. The default Write status of all
blocks after power-up is write locked. When bit 0 of the Block Locking register is set, Program and
Erase operations for the corresponding block are prevented. Clearing the Write-Lock bit will unprotect
the block. The Write-Lock bit must be cleared prior to starting a Program or Erase operation since it is
sampled at the beginning of the operation.
The Write-Lock bit functions in conjunction with the hardware Write Lock pin TBL# for the top Boot
Block. When TBL# is low, it overrides the software locking scheme. The top Boot Block Locking regis-
ter does not indicate the state of the TBL# pin.
The Write-Lock bit functions in conjunction with the hardware WP# pin for blocks 0 to 6. When WP# is
low, it overrides the software locking scheme. The Block Locking register does not indicate the state of
the WP# pin.
Lock Down
The Lock-Down bit, bit 1, controls the Block Locking register as described in Table 7. When in the FWH
interface mode, the default Lock Down status of all blocks upon power-up is not locked down. Once the
Lock-Down bit is set, any future attempted changes to that Block Locking register will be ignored. The
Lock-Down bit is only cleared upon a device reset with RST# or INIT# or power down. Current Lock
Down status of a particular block can be determined by reading the corresponding Lock-Down bit.
Once a block’s Lock-Down bit is set, the Write-Lock bits for that block can no longer be modified, and
the block is locked down in its current state of write accessibility.
JEDEC ID Registers
The JEDEC ID registers for the boot device appear at FFBC0000H and FFBC0001H in the 4 GByte
system memory map, and will appear elsewhere if the device is not the boot device. Register is not
available for read when the device is in Erase/Program operation. Unused register location will read as
00H. Refer to the relevant application note for details. See Table 2 for the device ID code.
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Parallel Programming Mode
Device Operation
Commands are used to initiate the memory operation functions of the device. The data portion of the
software command sequence is latched on the rising edge of WE#. During the software command
sequence the row address is latched on the falling edge of R/C# and the column address is latched on
the rising edge of R/C#.
Reset
AV
IL on RST# pin initiates a device reset.
Read
The Read operation of the SST49LF008A device is controlled by OE#. OE# is the output control and is
used to gate data from the output pins. Refer to the Read cycle timing diagram, Figure 13, for further
details.
Byte-Program Operation
The SST49LF008A device is programmed on a byte-by-byte basis. Before programming, one must
ensure that the sector, in which the byte which is being programmed exists, is fully erased. The Byte-
Program operation is initiated by executing a four-byte command load sequence for Software Data
Protection with address (BA) and data in the last byte sequence. During the Byte-Program operation,
the row address (A10-A0) is latched on the falling edge of R/C# and the column Address (A21-A11)is
latched on the rising edge of R/C#. The data bus is latched in the rising edge of WE#. The Program
operation, once initiated, will be completed, within 20 µs. See Figure 14 for Program operation timing
diagram, Figure 17 for timing waveforms, and Figure 25 for its flowchart. During the Program opera-
tion, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the
host is free to perform additional tasks. Any commands written during the internal Program operation
will be ignored.
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Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The
sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated
by executing a six-byte command load sequence for Software Data Protection with Sector-Erase com-
mand (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after
the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit
methods. See Figure 18 for Sector-Erase timing waveforms. Any commands written during the Sector-
Erase operation will be ignored.
Block-Erase Operation
The Block-Erase Operation allows the system to erase the device in 64 KByte uniform block size for
the SST49LF008A. The Block-Erase operation is initiated by executing a six-byte command load
sequence for Software Data Protection with Block-Erase command (50H) and block address. The
internal Block-Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined
using either Data# Polling or Toggle Bit methods. See Figure 19 for timing waveforms. Any commands
written during the Block-Erase operation will be ignored.
Chip-Erase
The SST49LF008A device provides a Chip-Erase operation only in PP Mode, which allows the user to
erase the entire memory array to the ‘1’s state. This is useful when the entire device must be quickly
erased.
The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command
sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal
Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the
only valid read is Toggle Bit or Data# Polling. See Table 9 for the command sequence, Figure 20 for
timing diagram, and Figure 28 for the flowchart. Any commands written during the Chip-Erase opera-
tion will be ignored.
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Write Operation Status Detection
The SST49LF008A device provides two software means to detect the completion of a Write (Program
or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two
status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled
after the rising edge of WE# which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a
Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with
either DQ7or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software
routine should include a loop to read the accessed location an additional two (2) times. If both reads
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST49LF008A device is in the internal Program operation, any attempt to read DQ7will pro-
duce the complement of the true data. Once the Program operation is completed, DQ7will produce
true data. Note that even though DQ7may have valid data immediately following the completion of an
internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data
bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase
operation, any attempt to read DQ7will produce a ‘0’. Once the internal Erase operation is completed,
DQ7will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# pulse for Program
operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# pulse.
See Figure 15 for Data# Polling timing diagram and Figure 26 for a flowchart. Proper status will not be
given using Data# Polling if the address is in the invalid range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6will produce
alternating ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation
is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is
valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block- or Chip-
Erase, the Toggle Bit is valid after the rising edge of sixth WE# pulse. See Figure 16 for Toggle Bit tim-
ing diagram and Figure 26 for a flowchart.
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Data Protection
The SST49LF008A device provides both hardware and software features to protect nonvolatile data
from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# pulse of less than 5 ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, WE# high will inhibit the Write operation. This prevents inadver-
tent writes during power-up or power-down.
Software Data Protection (SDP)
SST49LF008A provides the JEDEC approved Software Data Protection scheme for all data alteration
operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-
byte sequences. The three-byte load sequence is used to initiate the Program operation, providing
optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down.
Any Erase operation requires the inclusion of a six-byte load sequence. The SST49LF008A device is
shipped with the Software Data Protection permanently enabled. See Table 9 for the specific software
command codes. During SDP command sequence, invalid commands will abort the device to Read
mode, within TRC.
Table 8: Operation Modes Selection (PP Mode)
Mode RST# OE# WE# DQ Address
Read VIH VIL VIH DOUT AIN
Program VIH VIH VIL DIN AIN
Erase VIH VIH VIL X1Sector or Block address, XXH for Chip-
Erase
Reset VIL X X High Z X
Write Inhibit VIH VIL X High Z/DOUT X
XXV
IH High Z/DOUT X
Product Identification VIH VIL VIH Manufacturer’s ID (BFH)
Device ID2
A18-A1=VIL,A
0=VIL
A18-A1=VIL,A
0=VIH
T8.6 25085
1. X can be VIL or VIH, but no other value.
2. Device ID = 5AH for SST49LF008A
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Software Command Sequence
Table 9: Software Command Sequence
Command
Sequence
1st1
Write Cycle
1. FWH Mode uses consecutive Write cycles to complete a command sequence; PP Mode uses consecutive bus cycles to
complete a command sequence.
2nd1
Write Cycle
3rd1
Write Cycle
4th1
Write Cycle
5th1
Write Cycle
6th1
Write Cycle
Addr2
2. Address format A14-A0(Hex), Addresses A21-A15 can be VIL or VIH, but no other value, for the Command sequence in
PP Mode.
Data Addr2Data Addr2Data Addr2Data Addr2Data Addr2Data
Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA3
3. BA = Program Byte address
Data
Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX4
4. SAXfor Sector-Erase Address
30H
Block-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H BAX5
5. BAXfor Block-Erase Address
50H
Chip-Erase6
6. Chip-Erase is supported in PP Mode only
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID Entry7,8
7. SST Manufacturer’s ID = BFH, is read with A0=0,
With A19-A1= 0; 49LF008A Device ID = 5AH, is read with A0=1.
8. The device does not remain in Software Product ID mode if powered down.
5555H AAH 2AAAH 55H 5555H 90H
Software ID Exit9
9. Both Software ID Exit operations are equivalent.
XXH F0H
Software ID Exit95555H AAH 2AAAH 55H 5555H F0H
T9.6 25085
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Electrical Specifications
The AC and DC specifications for the FWH Interface signals (FWH[3:0], CLK, FWH4, and RST#) as
defined in Section 4.2.2 of the PCI Local Bus Specification, Rev. 2.1. Refer to Table 12 for the DC voltage
and current specifications. Refer to the tables on pages 24 through 29 for the AC timing specifications for
Clock, Read/Write, and Reset operations.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential1.................-2.0V to VDD+2.0V
1. Do not violate processor or chipset limitations on the INIT# pin.
Package Power Dissipation Capability (TA=25°C).................................... 1.0W
Surface Mount Solder Reflow Temperature2...........................260°C for 10 seconds
2. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest
information.
Output Short Circuit Current3................................................... 50mA
3. Outputs shorted for no more than one second. No more than one output shorted at a time. This note applies to non-PCI
outputs.
Table 10:Operating Range
Range Ambient Temp VDD
Commercial 0°C to +85°C 3.0-3.6V
T10.1 25085
Table 11:AC Conditions of Test1,2
1. See Figures 23 and 24
2. FWH interface signals use PCI load test conditions
Input Rise/Fall Time Output Load
3ns CL=30pF
T11.1 25085
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DC Characteristics
Table 12:DC Operating Characteristics (All Interfaces)
Symbol Parameter
Limits
Test Conditions1
1. Test conditions apply to PP mode.
Min Max
Unit
s
IDD Active VDD Current LCLK (FWH mode) and Address Input (PP
mode)=VILT/VIHT at f=33 MHz (FWH mode)or1/
TRC
min (PP Mode)
All other inputs=VIL or VIH
Read 12 mA All outputs = open, VDD=VDD Max
Write2
2. IDD active while Erase or Program is in progress.
24 mA See Note3
3. For PP Mode: OE# = WE# = VIH; For FWH mode:f=1/T
RC min, LFRAME# = VIH, CE# = VIL.
ISB Standby VDD Current
(FWH Interface)
100 µA LCLK (FWH mode) and Address Input (PP
mode)=VILT/VIHT
at f=33 MHz (FWH mode)or1/
TRC min (PP Mode)
LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,
VDD=VDD Max, All other inputs 0.9 VDD or 0.1
VDD
IRY4
4. The device is in Ready Mode when no activity is on the FWH bus.
Ready Mode VDD Cur-
rent
(FWH Interface)
10 mA LCLK (FWH mode) and Address Input (PP
mode)=VILT/VIHT
at f=33 MHz (FWH mode)or1/
TRC min (PP Mode)
LFRAME#=VIL, f=33 MHz, VDD=VDD Max
All other inputs 0.9 VDD or 0.1 VDD
IIInput Current for IC,
ID [3:0] pins
200 µA VIN=GND to VDD,V
DD=VDD Max
ILI Input Leakage Current 1 µA VIN=GND to VDD,V
DD=VDD Max
ILO Output Leakage Cur-
rent
AV
OUT=GND to VDD,V
DD=VDD Max
VIHI5
5. Do not violate processor or chipset specification regarding INIT# voltage.
INIT# Input High Volt-
age
1.0 VDD+0.
5
VV
DD=VDD Max
VILI5INIT# Input Low Volt-
age
-0.5 0.4 V VDD=VDD Min
VIL Input Low Voltage -0.5 0.3
VDD
VV
DD=VDD Min
VIH Input High Voltage 0.5
VDD
VDD+0.
5
VV
DD=VDD Max
VOL Output Low Voltage 0.1
VDD
VI
OL=1500µA, VDD=VDD Min
VOH Output High Voltage 0.9
VDD
VI
OH=-500 µA, VDD=VDD Min
T12.10 25085
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Table 13:Recommended System Power-up Timings
Symbol Parameter Minimum Units
TPU-READ1Power-up to Read Operation 100 µs
TPU-WRITE1Power-up to Write Operation 100 µs
T13.2 25085
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter
Table 14:Pin Impedance (VDD=3.3V, TA=25 °C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
CI/O1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance VI/O =0V 12pF
CIN1Input Capacitance VIN =0V 12pF
LPIN2
2. Refer to PCI spec.
Pin Inductance 20 nH
T14.4 25085
Table 15:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
NEND1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 10,000 Cycles JEDEC Standard A117
TDR1Data Retention 100 Years JEDEC Standard A103
ILTH1Latch Up 100 + IDD mA JEDEC Standard 78
T15.3 25085
Table 16:Clock Timing Parameters
Symbol Parameter Min Max Units
TCYC CLK Cycle Time 30 ns
THIGH CLK High Time 11 ns
TLOW CLK Low Time 11 ns
- CLK Slew Rate (peak-to-peak) 1 4 V/ns
- RST# or INIT# Slew Rate 50 mV/ns
T16.1 25085
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Figure 8: CLK Waveform
AC Characteristics (FWH Mode)
Table 17:Read/Write Cycle Timing Parameters, VDD =3.0-3.6V (FWH Mode)
Symbol Parameter Min Max Units
TCYC Clock Cycle Time 30 ns
TSU Data Set Up Time to Clock Rising 7 ns
TDH Clock Rising to Data Hold Time 0 ns
TVAL1
1. Minimum and maximum times have different loads. See PCI spec.
Clock Rising to Data Valid 2 11 ns
TBP Byte Programming Time 20 µs
TSE Sector-Erase Time 25 ms
TBE Block-Erase Time 25 ms
TSCE Chip-Erase Time 100 ms
TON Clock Rising to Active (Float to Active Delay) 2 ns
TOFF Clock Rising to Inactive (Active to Float Delay) 28 ns
T17.3 25085
1161 F11.0
0.4 VDD p-to-p
(minimum)
Tcyc
Thigh
Tlow
0.4 VDD
0.3 VDD
0.6 VDD
0.2 VDD
0.5 VDD
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Table 18:AC Input/Output Specifications, VDD =3.0-3.6V (FWH Mode)
Symbol Parameter
Limits
Test ConditionsMin Max Units
IOH(AC) Switching Current High -12 VDD
-17.1(VDD-VOUT)
Equation C1
mA
mA
0<V
OUT 0.3VDD
0.3VDD <V
OUT < 0.9VDD
0.7VDD <V
OUT <VDD
(Test Point) -32 VDD mA VOUT=0.7VDD
IOL(AC) Switching Current Low 16 VDD
26.7 VOUT
Equation D1mA
mA
VDD >VOUT 0.6VDD
0.6VDD >V
OUT > 0.1VDD
0.18VDD >V
OUT >0
(Test Point) 38 VDD mA VOUT=0.18VDD
ICL Low Clamp Current -25+(VIN+1)/0.015 mA -3 < VIN -1
ICH High Clamp Current 25+(VIN-VDD-1)/0.015 mA VDD+4 > VIN VDD+1
slewr2Output Rise Slew Rate 1 4 V/ns 0.2VDD-0.6VDD load
slewf2Output Fall Slew Rate 1 4 V/ns 0.6VDD-0.2VDD load
T18.3 25085
1. See PCI spec.
2. PCI specification output load is used.
Table 19:Reset Timing Parameters, VDD =3.0-3.6V (FWH Mode)
Symbol Parameter Min Max Units
TPRST VDD stable to Reset Low 1 ms
TKRST Clock Stable to Reset Low 100 µs
TRSTP RST# Pulse Width 100 ns
TRSTF RST# Low to Output Float 48 ns
TRST1
1. There will be a latency of TRSTE if a reset procedure is performed during a Program or Erase operation.
RST# High to FWH4 Low 1 µs
TRSTE RST# Low to reset during Sector-/Block-Erase or Program 10 µs
T19.5 25085
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Figure 9: Reset Timing Diagram
Figure 10:Output Timing Parameters
CLK
VDD
RST#/INIT#
FWH4
FWH[3:0]
1161 F12.0
TPRST
TKRST TRSTP
TRSTF
TRSTE Sector-/Block-Erase
or Program operation
aborted
TRST
T
VAL
V
TEST
V
TL
V
TH
T
OFF
T
ON
1161 F13.0
CLK
FWH [3:0]
(Valid Output Data)
FWH [3:0]
(Float Output Data)
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Figure 11:Input Timing Parameters
Table 20:Interface Measurement Condition Parameters
Symbol Value Units
VTH1
1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met
with no more overdrive than this.
VMAX specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may
use different voltage values, but must correlate results back to these parameters.
0.6 VDD V
VTL10.2 VDD V
VTEST 0.4 VDD V
VMAX10.4 VDD V
Input Signal Edge Rate 1 V/ns
T20.3 25085
TSU
TDH
Inputs
Valid
1161 F14.0
CLK
FWH [3:0]
(Valid Input Data)
VTEST
VTL
VMAX
VTH
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SST49LF008A
Data Sheet
A
Microchip Technology Company
AC Characteristics (PP Mode)
Table 21:Read Cycle Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol Parameter Min Max Units
TRC Read Cycle Time 270 ns
TRST RST# High to Row Address Setup 1 µs
TAS R/C# Address Set-up Time 45 ns
TAH R/C# Address Hold Time 45 ns
TAA Address Access Time 120 ns
TOE Output Enable Access Time 60 ns
TOLZ OE# Low to Active Output 0 ns
TOHZ OE# High to High-Z Output 35 ns
TOH Output Hold from Address Change 0 ns
T21.2 25085
Table 22:Program/Erase Cycle Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol Parameter Min Max Units
TRST RST# High to Row Address Setup 1 µs
TAS R/C# Address Setup Time 50 ns
TAH R/C# Address Hold Time 50 ns
TCWH R/C# to Write Enable High Time 50 ns
TOES OE# High Setup Time 20 ns
TOEH OE# High Hold Time 20 ns
TOEP OE# to Data# Polling Delay 40 ns
TOET OE# to Toggle Bit Delay 40 ns
TWP WE# Pulse Width 100 ns
TWPH WE# Pulse Width High 100 ns
TDS Data Setup Time 50 ns
TDH Data Hold Time 5 ns
TIDA Software ID Access and Exit Time 150 ns
TBP Byte Programming Time 20 µs
TSE Sector-Erase Time 25 ms
TBE Block-Erase Time 25 ms
TSCE Chip-Erase Time 100 ms
T22.2 25085
Table 23:Reset Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol Parameter Min Max Units
TPRST VDD stable to Reset Low 1 ms
TRSTP RST# Pulse Width 100 ns
TRSTF RST# Low to Output Float 48 ns
TRST1
1. There will be a reset latency of TRSTE or TRSTC if a reset procedure is performed during a Program or Erase operation.
RST# High to Row Address Setup 1 µs
TRSTE RST# Low to reset during Sector-/Block-Erase or Program 10 µs
TRSTC RST# Low to reset during Chip-Erase 50 µs
T23.1 25085
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 12:Reset Timing Diagram (PP Mode)
Figure 13:Read Cycle Timing Diagram (PP Mode)
VDD
RST#
Addresses
R/C#
DQ7-0
1161 F15.0
TPRST
TRSTP
TRSTF
TRSTE
Row Address
Sector-/Block-Erase
or Program operation
aborted
TRST
TRSTC Chip-Erase
aborted
1161 F16.0
Column Address
Data Valid High-Z
Row AddressColumn AddressRow Address
RST#
Addresses
R/C#
VIH
High-Z
TRST TRC
TAS TAH TAH
TAA
TOE
TOLZ TOHZ
TOH
TAS
WE#
OE#
DQ7-0
TRSTP
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 14:Write Cycle Timing Diagram (PP Mode)
Figure 15:Data# Polling Timing Diagram (PP Mode)
1161 F17.0
Column AddressRow Address
Data Valid
RST#
Addresses
R/C#
TRST
TAS TAH
TCWH
TWP TWPH
TOEH
TDH
TDS
TAH
TAS
WE#
OE#
DQ7-0
TOES
TRSTP
1161 F18.0
Addresses
R/C#
TOEP
Row Column
WE#
OE#
DQ7D#D D# D
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 16:Toggle Bit Timing Diagram (PP Mode)
Figure 17:Byte-Program Timing Diagram (PP Mode)
1161 F19.0
Addresses
R/C#
TOET
Row Column
WE#
OE#
DQ6D D
1161 F20.0
TWP TWPH TBP
Four-Byte Code for Byte-Program
5555 2AAA 5555 BA
SB0
BA = Byte-Program Address
SB1 SB2 SB3 Internal Program Starts
WE#
Addresses
R/C#
OE#
Data55AA A0
DQ7-0
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 18:Sector-Erase Timing Diagram (PP Mode)
Figure 19:Block-Erase Timing Diagram (PP Mode)
1161 F21.0
TWP TWPH
TSE
Six-Byte code for
Sector-Erase Operation
5555 2AAA 5555 5555 2AAA SAX
SB0
SAX= Sector Address
SB1 SB2 SB3 SB4 SB5 Internal Erasure Starts
WE#
Addresses
R/C#
OE#
55AA55AA 80 30
DQ7-0
1161 F22.0
TWP
TWPH TBE
Six-Byte code for
Block-Erase Operation
5555 2AAA 5555 5555 2AAA BAX
SB0 SB1 SB2 SB3 SB4 SB5 Internal Erasure Starts
WE#
Addresses
R/C#
OE#
55AA55AA 80 50
DQ7-0
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 20:Chip-Erase Timing Diagram (PP Mode)
Figure 21:Software ID Entry and Read (PP Mode)
1161 F23.0
TWP
TWPH
TSCE
Six-Byte code for Chip-Erase Operation
5555 2AAA 5555 5555 2AAA 5555
SB0 SB1 SB2 SB3 SB4 SB5 Internal Erasure Starts
WE#
Addresses
R/C#
OE#
55AA55AA 80 10
DQ7-0
1161 F24.2
Addresses
TIDA
DQ7-0
WE#
SW0
Device ID = 5AH for SST49LF008A
SW1 SW2
5555 2AAA 5555 0000 0001
OE#
R/C#
Three-byte sequence for
Software ID Entry
TWP
TWPH TAA
BF
Device ID
55AA 90
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
Figure 22:Software ID Exit and Reset (PP Mode)
Figure 23:AC Input/Output Reference Waveforms (PP Mode)
Figure 24:A Test Load Example (PP Mode)
1161 F25.0
Addresses
DQ7-0
TIDA
TWP
TWPH
WE#
SW0 SW1 SW2
5555 2AAA 5555
Three-Byte Sequence for
Software ID Exit and Reset
OE#
R/C#
AA 55 F0
1161 F26.0
REFERENCE POINTS OUTPUTINPUT VIT
VIHT
VILT
VOT
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Mea-
surement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise
and fall times (10% 90%) are <5 ns.
Note: VIT -V
INPUT Test
VOT -V
OUTPUT Test
VIHT -V
INPUT HIGH Test
VILT -V
INPUT LOW Test
1161 F27.0
TO TESTER
TO DUT
CL
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 25:Byte-Program Algorithm
1161 F28.0
Start
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: A0H
Address: 5555H
Load Byte
Address/Byte
Data
Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 26:Wait Options
1161 F29.0
Wait TBP,
TSCE, TBE
or TSE
Byte-
Program/Erase
Initiated
Internal Timer Toggle Bit
Ye s
Ye s
No
No
Program/Erase
Completed
Does DQ6
match
Read same
byte
Data# Polling
Program/Erase
Completed
Program/Erase
Completed
Read byte
Is DQ7=
true data
Read DQ7
Byte-
Program/Erase
Initiated
Byte-
Program/Erase
Initiated
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
Figure 27:Software Product Command Flowcharts
1161 F30.0
Write data: AAH
Address: 5555H
Software Product ID Entry
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: 90H
Address: 5555H
Wait TIDA
Read Software ID
Write data: AAH
Address: 5555H
Software Product ID Exit
Reset Command Sequence
Write data: 55H
Address: 2AAAH
Write data: F0H
Address: 5555H
Write data: F0H
Address: XXH
Return to normal
operation
Wait TIDA
Wait TIDA
Return to normal
operation
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Figure 28:Erase Command Sequence
1161 F31.0
Write data: AAH
Address: 5555H
Chip-Erase
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 10H
Address: 5555H
Write data: AAH
Address: 5555H
Wait Options
Chip erased
to FFH
Write data: AAH
Address: 5555H
Sector-Erase
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 30H
Address: SAX
Write data: AAH
Address: 5555H
Wait Options
Sector erased
to FFH
Write data: AAH
Address: 5555H
Block-Erase
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 50H
Address: BAX
Write data: AAH
Address: 5555H
Wait Options
Block erased
to FFH
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Product Ordering Information
Valid combinations for SST49LF008A
SST49LF008A-33-4C-WHE SST49LF008A-33-4C-NHE SST49LF008A-33-4C-EIE
Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST
sales representative to confirm availability of valid combinations and to determine availability of new combi-
nations.
SST 49 LF 008A - 33 - 4C - EIE
XX XX XXXX - XX - XX -XXX
Environmental Attribute
E1= non-Pb
Package Modifier
H = 32 leads
I = 40 leads
Package Type
N = PLCC
W = TSOP (type 1, die up, 8mm x
14mm)
E = TSOP (type 1, die up, 10mm x
20mm)
Operating Temperature
C = Commercial = 0°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Serial Access Clock Frequency
33 = 33 MHz
Version
A = Second Version
Device Density
008 = 8 Mbit
Voltage Range
L = 3.0-3.6V
Product Series
49 = Firmware Hub for Intel 8xx Chip-
sets
1. Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
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Microchip Technology Company
Packaging Diagrams
Figure 29:32-lead Plastic Lead Chip Carrier (PLCC)
SST Package Code: NH
.040
.030
.021
.013
.530
.490
.095
.075
.140
.125
.032
.026
.032
.026
.029
.023
.453
.447
.553
.547
.595
.585
.495
.485 .112
.106
.042
.048
.048
.042
.015 Min.
TOP VIEW SIDE VIEW BOTTOM VIEW
1232
.400
BSC
32-plcc-NH-3
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.
.050
BSC
.050
BSC
Optional
Pin #1
Identifier .020 R.
MAX. R.
x30°
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
Figure 30:32-lead Thin Small Outline Package (TSOP) 8mm x 14mm
SST Package Code: WH
32-tsop-WH-7
Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
1.20
max.
1mm
Pin # 1 Identifier
12.50
12.30
14.20
13.80
0.70
0.50
8.10
7.90 0.27
0.17
0.50
BSC
1.05
0.95
0.15
0.05
0.70
0.50
0°-
DETAIL
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
Figure 31:40-lead Thin Small Outline Package (TSOP) 10mm x 20mm
SST Package Code: EI
18.50
18.30
20.20
19.80
0.70
0.50
10.10
9.90
0.27
0.17
1.05
0.95
0.15
0.05
0.70
0.50
40-tsop-EI-7
Note: 1. Complies with JEDEC publication 95 MO-142 CD dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
Pin # 1 Identifier
0.50
BSC
1.20
max.
0°-
DETAIL
1mm
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
Table 24:Revision History
Revision Draft Changes Date
06 2002 Data Book
Changed Transient Voltage from -1.0V to VDD +1.0V to -2.0V to VDD
+2.0V to match Intel FWH spec per IBM requirement.
Added footnote for Transient Voltage.
Updated footnote for Output Short Circuit Current.
Updated Data# Polling description
Corrected the values in Table 5 on page 14: General Purpose Inputs
Register
Added note to Table 12 on page 23: DC Operating Characteristics
July 2001
07 Added 40-lead TSOP for SST49LF008A only
Corrected the IDD Test Conditions in Table 12 on page 23
June 2003
08 2004 Data Book
Updated document status to Data Sheet
Dec 2003
09 Removed 2 Mbit and 3 Mbit devices - refer to EOL Product Data Sheet
S71161(01)
Oct 2004
10 Removed 32-PLCC (NH/NHE) Package and associated MPNs for the 4
Mbit device
refer to EOL Product Data Sheet S71161(03).
Clarified the Solder Temperature Profile under “Absolute Maximum
Stress Ratings” on page 22
Nov 2004
11 Removed 4 Mbit WH/WHE device - refer to EOL Product Data Sheet
S71161(03)
Added statement that non-Pb devices are RoHS compliant to Features
section
Updated Surface Mount Solder Reflow Temperature information
Removed leaded part numbers
Applied new formatting
Mar 2006
AApplied new document format
Released document under letter revision system
Updated Spec number from S71161 to DS25085
Oct 2011
©2011 Silicon Storage Technology, Inc. DS25085A 10/11
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8 Mbit Firmware Hub
SST49LF008A
Data Sheet
A
Microchip Technology Company
©
2011 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.
SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Tech-
nology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.
Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.
Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of
Sale.
For sales office locations and information, please see www.microchip.com.
Silicon Storage Technology, Inc.
A Microchip Technology Company
www.microchip.com
ISBN:978-1-61341-713-3