1
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
PG-TO220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
*1
*2
*1: Internal body diode
*2: Integrated ESD diode
MOSFET
600VCoolMOSªP7PowerDevice
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
 commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
 lowRDS(on)*A(below1Ohm*mm²)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges
Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 120 mΩ
Qg,typ 36 nC
ID,pulse 78 A
Eoss @ 400V 4.0 µJ
Body diode diF/dt 900 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R120P7 PG-TO 220 FullPAK 60R120P7 see Appendix A
2
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
26
16 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 78 A TC=25°C
Avalanche energy, single pulse EAS - - 82 mJ ID=5.0A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.41 mJ ID=5.0A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 5.0 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 28 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current IS- - 26 A TC=25°C
Diode pulse current2) IS,pulse - - 78 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=26A,Tj=25°C
see table 8
Maximum diode commutation speed diF/dt - - 900 A/µsVDS=0...400V,ISD<=26A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min
1) Limited by Tj,max. Maximum Duty Cycle D = 0.50; TO-220 equivalent
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
4
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.49 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W -
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
5
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.41mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.100
0.234
0.120
-ΩVGS=10V,ID=8.2A,Tj=25°C
VGS=10V,ID=8.2A,Tj=150°C
Gate resistance RG-7-Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1544 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 27 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 50 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 524 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 21 - ns VDD=400V,VGS=13V,ID=8.2A,
RG=5.3Ω;seetable9
Rise time tr- 14 - ns VDD=400V,VGS=13V,ID=8.2A,
RG=5.3Ω;seetable9
Turn-off delay time td(off) - 81 - ns VDD=400V,VGS=13V,ID=8.2A,
RG=5.3Ω;seetable9
Fall time tf- 6 - ns VDD=400V,VGS=13V,ID=8.2A,
RG=5.3Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 8 - nC VDD=400V,ID=8.2A,VGS=0to10V
Gate to drain charge Qgd - 11 - nC VDD=400V,ID=8.2A,VGS=0to10V
Gate charge total Qg- 36 - nC VDD=400V,ID=8.2A,VGS=0to10V
Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=8.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
6
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=8.2A,Tj=25°C
Reverse recovery time trr - 207 - ns VR=400V,IF=4A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 1.9 - µC VR=400V,IF=4A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 19 - A VR=400V,IF=4A,diF/dt=100A/µs;
see table 8
7
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-5
10-4
10-3
10-2
10-1
100
101
102
10 µs
1 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-5
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
101
0.5
0.2
0.1
0.01
0.05
0.02
single pulse
ZthJC=f(tP);parameter:D=tp/T
8
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
20
40
60
80
100
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
70
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30 40 50 60
0.200
0.250
0.300
0.350
0.400
0.450
0.500
20 V
10 V
6.5 V
6 V
7 V
5.5 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[normalized]
-50 -25 0 25 50 75 100 125 150
0.000
0.500
1.000
1.500
2.000
2.500
3.000
RDS(on)=f(Tj);ID=8.2A;VGS=10V
9
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
20
40
60
80
100
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40 50
0
2
4
6
8
10
12
120 V 400 V
VGS=f(Qgate);ID=8.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
20
40
60
80
100
EAS=f(Tj);ID=5.0A;VDD=50V
10
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-50 -25 0 25 50 75 100 125 150
540
550
560
570
580
590
600
610
620
630
640
650
660
670
680
690
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
1
2
3
4
5
6
Eoss=f(VDS)
11
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
12
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
6PackageOutlines
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.862.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38
1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
10
21.03.2019
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3
Figure1OutlinePG-TO220FullPAK,dimensionsinmm
13
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSP7Webpage:www.infineon.com
•IFXCoolMOSP7applicationnote:www.infineon.com
•IFXCoolMOSP7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
14
600VCoolMOSªP7PowerDevice
IPA60R120P7
Rev.2.2,2020-01-29Final Data Sheet
RevisionHistory
IPA60R120P7
Revision:2020-01-29,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-05-18 Release of final version
2.1 2018-05-15 Updated diagram scalings; Nomenclature of product qualification grade was changed
2.2 2020-01-29 Updated package drawing, symbol ID and product validation
Trademarks
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Publishedby
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(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
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