DISCRETE SEMICONDUCTORS DAWA SlAlleler PMBT2907; PMBT2907A PNP switching transistors Product specification 1999 Apr 27 Supersedes data of 1997 Sep 04 ili s PHILIPS Semiconductors & DH I LI PSPhilips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A FEATURES PINNING e High current (max. 600 mA) PIN DESCRIPTION e Low voltage (max. 60 V). { base 2 emitter e Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. [4 3 3 NPN complements: PMBT2222 and PMBT2222A. 1 MARKING TYPE NUMBER MARKING CODE() H 1 H 5 2 PMBT2907 *2B Top view MAM256 PMBT2907A *2F Note 1. * =p: Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. | MAX. | UNIT Vcso collector-base voltage open emitter - 60 V VcEo collector-emitter voltage open base PMBT2907 - 40 V PMBT2907A - -60 V VeBo emitter-base voltage open collector - -5 Vv Io collector current (DC) - -600 |mA lom peak collector current - 800 mA IBu peak base current - 200 mA Prot total power dissipation Tamb 25 C - 250 mw Tstg storage temperature 65 +150 |C Tj junction temperature - 150 C Tamb operating ambient temperature 65 +150 |C 1999 Apr 27 2Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rih ja thermal resistance from junction to ambient note 1 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | MAX. | UNIT IcBo collector cut-off current le = 0; Veg =50 V PMBT2907 - -20 nA PMBT2907A - 10 nA collector cut-off current le = 0; Veg = -50 V; T) = 125 C PMBT2907 - -20 LA PMBT2907A - 10 LA lEBo emitter cut-off current Ic =0; Vegp=-5 V - 50 nA hee DC current gain Ic =-0.1 MA; Vee =-10V PMBT2907 35 - PMBT2907A 75 - DC current gain Ilo =-1 MA; Vee =-10 V PMBT2907 50 - PMBT2907A 100 - DC current gain Ic =-10 mA; Vee =-10V PMBT2907 75 - PMBT2907A 100 - DC current gain Io =-150 mA; Vce = -10 V 100 300 DC current gain Ic = -500 mA; Veg = -10 V PMBT2907 30 - PMBT2907A 50 - VecEsat collector-emitter saturation Ic =-150 mA; lp = -15 mA - 400 mV voltage Ic = -500 mA; Ip = -50 mA - -1.6 |V VBEsat base-emitter saturation voltage Ic =-150 mA; lp = -15 mA - -1.3 Vv Ic = 500 mA; Ip = -50 mA - -2.6 Vv Cy collector capacitance le =ig = 0; Veg =-10 V; f= 1 MHz - 8 pF Ce emitter capacitance Ic =ig = 0; Veg =-2 V; f= 1 MHz - 30 pF fr transition frequency Io =-50 mA; Veg = -20V; f= 100MHz | 200 - MHz 1999 Apr 27Phi lips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A SYMBOL PARAMETER CONDITIONS MIN. | MAX. | UNIT Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time Icon = -150 MA; IBon = 15 mA; - 40 ns ty delay time Bot = 15 MA - 12 ns t rise time - 30 ns lot turn-off time - 365 ns ts storage time - 300 ns t fall time - 65 ns Vea = Yc Rp b V b oscilloscope (probe) p , (probe) oscilloscope a 4502 4500 __, R2 DUT MGD624 ;=9.5 V; T = 500 us; tp = 10 us; t, = 1 <3 ns. R1 = 68 Q; R2 = 325 Q; Rg = 325 Q; Re = 160 Q. VeB =3.5 V; Vec =-29.5 V. Oscilloscope: input impedance Z = 50 Q. Fig.2 Test circuit for switching times. 1999 Apr 27 4Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D >] E>r{a] [JN f \ / \ | | \ | ! \ i | \ ! I | \ / L ] | NL | |. Me EVO 3 _L| I | | | | 1 1 1 2 | Ke: el | Lomo [e] detail X 0 4 2mm Lirrriiririitiiiiiiiiidt scale DIMENSIONS (mm are the original dimensions) Ay UNIT A max. bp c D E e ey He Lp Q v w 14 048 | 015 | 3.0 | 14 25 | 0.45 | 0.55 mm) o9 | %1 | o38 | 009 | 28 | 12 | 12% | %% | 24 | ots | 045 | OF | O41 REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SoT23 --} 97-02-28 5 1999 Apr 27Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, itis advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 27 6Philips Semiconductors Product specification PNP switching transistors PMBT2907; PMBT2907A NOTES 1999 Apr 27 7Philips Semiconductors Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp8 Philips Semiconductors Date of release: 1999 Apr 27 Document order number: 9397 750 05818 pet PHILIPS Lede