2SJ528(L), 2SJ528(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-641A (Z) 2nd. Edition Jul. 1998 Features * Low on-resistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 4 D 1 2 G 1 2 S 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -7 A -28 A -7 A -7 A 4.2 mJ 20 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalenche current Avalenche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SJ528(L),2SJ528(S) Electrical Characteristics (Ta = 25C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.17 0.22 I D = -4A, VGS = -10V Note4 resistance RDS(on) -- 0.24 0.37 I D = -4A, VGS = -4V Note4 Forward transfer admittance |yfs| 3.0 5.0 -- S I D = -4A, VDS = -10V Input capacitance Ciss -- 400 -- pF VDS = -10V Output capacitance Coss -- 220 -- pF VGS = 0 Reverse transfer capacitance Crss -- 75 -- pF f = 1MHz Turn-on delay time t d(on) -- 10 -- ns VGS = -10V, ID = -4A Rise time tr -- 40 -- ns RL = 7.5 Turn-off delay time t d(off) -- 75 -- ns Fall time tf -- 65 -- ns Body-drain diode forward voltage VDF -- -1.1 -- V I F = -7A, VGS = 0 Body-drain diode reverse recovery time -- 65 -- ns I F = -7A, VGS = 0 diF/ dt = 50A/s Note: Symbol t rr Note4 4. Pulse test 3 2SJ528(L),2SJ528(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 -100 10 s Drain Current I D (A) Channel Dissipation Pch (W) -30 30 20 10 -3 -1 -0.3 1 =1 0 s this area is limited by R DS(on) ) -0.1 -0.03 0 50 100 Case Temperature 150 Tc (C) 200 -4 V -10 V -6 V -5 V -8 -3.5 V -3 V VGS = -2.5 V -2 0 Typical Transfer Characteristics V DS = -10 V Pulse Test Pulse Test -6 -4 -30 -100 (V) DS -10 -2 -4 -6 -8 -10 Drain to Source Voltage V DS(V) Drain Current I D (A) -10 Ta = 25 C -0.1 -0.3 -1 -3 -10 Drain to Source Voltage V Typical Output Characteristics Drain Current I D (A) 10 0 m ms Op s( era 1s tio ho n( t) Tc = 25 Operation in DC -0.01 4 PW -10 -8 -6 -4 Tc = 75 C -2 0 25 C -25 C -1 -2 -3 -4 Gate to Source Voltage V GS (V) -5 2SJ528(L),2SJ528(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -1.6 -1.2 -0.8 -5 A -2 A -0.4 -1 A Static Drain to Source on State Resistance R DS(on) ( W) 0 -4 -8 -12 Gate to Source Voltage -1 A V GS = -4 V 0.1 0 -40 -5 A -1,-2 A 0.2 0.5 -10 V 0 40 80 120 160 Case Temperature Tc (C) VGS = -4 V 0.2 0.1 -10 V 0.05 0.02 Pulse Test 0.01 -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test -2 A 0.4 I D = -5 A 0.3 Drain to Source On State Resistance R DS(on) ( W) Pulse Test -0.1 -0.3 -1 -3 -10 Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) -2.0 Static Drain to Source on State Resistance vs. Drain Current 1 100 -30 -100 I D (A) Forward Transfer Admittance vs. Drain Current 30 10 Ta = -25 C 3 25 C 1 0.3 0.1 -0.1 -0.3 75 C V DS = -10 V Pulse Test -1 -3 -10 -30 Drain Current I D (A) -100 5 2SJ528(L),2SJ528(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 VGS = 0 f = 1 MHz 200 Capacitance C (pF) Reverse Recovery Time trr (ns) 500 100 50 20 Ciss 300 Coss 100 Crss 30 10 5 -0.1 1000 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 -1 -10 -20 -0.3 -3 Reverse Drain Current I DR (A) 0 -60 -80 -8 V DS V GS V DD = -10 V -25 V -50 V 32 8 16 24 Gate Charge Qg (nc) -40 -50 -12 -16 -20 40 1000 Switching Time t (ns) -40 -4 V GS (V) I D = -7 A -30 Switching Characteristics 0 Gate to Source Voltage V DS (V) Drain to Source Voltage -20 -100 0 6 V DD = -10 V -25 V -50 V -20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 -10 V GS = -10 V, V DD = -30 V Pw = 5 s, duty < 1 % 300 t d(off) 100 30 tf tr t d(on) 10 3 1 -0.1 -0.3 -1 -3 -10 -20 Drain Current I D (A) 2SJ528(L),2SJ528(S) Repetitive Avalanche Energy EAR (mJ) -10 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Pulse Test -8 -6 -10 V -4 V GS = 0, 5 V -5 V -2 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 Maximum Avalanche Energy vs. Channel Temperature Derating 10 I AP = -7 A V DD = -25 V duty < 0.1 % Rg > 50 W 8 6 4 2 0 25 V SD (V) 50 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50W 0 VDD 7 2SJ528(L),2SJ528(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 q ch - c(t) = g s (t) * q ch - c q ch - c = 6.25 C/W, Tc = 25 C 0.02 e uls 1 0.03 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 100 1m 10 m 100 m Pulse Width 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 1 Vin 10% D.U.T. RL 90% Vin -10 V 50W V DD = -30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ528(L),2SJ528(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 1.2 0.3 16.2 0.5 1.15 0.1 0.8 0.1 (0.7) 3.1 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) -- -- 0.42 g 9 2SJ528(L),2SJ528(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) -- Conforms 0.28 g 2SJ528(L),2SJ528(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) -- Conforms 0.28 g 11 2SJ528(L),2SJ528(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12