2SJ528(L), 2SJ528(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-641A (Z)
2nd. Edition
Jul. 1998
Features
• Low on-resistance RDS(on) = 0.17 Ω typ.
• 4 V gete drive devices
• High speed switching
Outline
123
44
123
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SJ528(L),2SJ528(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID–7 A
Drain peak current ID(pulse)Note1 –28 A
Body-drain diode reverse drain current IDR –7 A
Avalenche current IAP Note3 –7 A
Avalenche energy EAR Note3 4.2 mJ
Channel dissipation PchNote2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SJ528(L),2SJ528(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0
Zero gate voltege drain current IDSS — — –10 µAV
DS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µAV
GS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1mA, VDS = –10V
Static drain to source on state RDS(on) — 0.17 0.22 ΩID = –4A, VGS = –10V Note4
resistance RDS(on) — 0.24 0.37 ΩID = –4A, VGS = –4V Note4
Forward transfer admittance |yfs| 3.0 5.0 — S ID = –4A, VDS = –10V Note4
Input capacitance Ciss — 400 — pF VDS = –10V
Output capacitance Coss — 220 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time td(on) — 10 — ns VGS = –10V, ID = –4A
Rise time tr— 40 — ns RL = 7.5Ω
Turn-off delay time td(off) —75—ns
Fall time tf—65—ns
Body–drain diode forward voltage VDF — –1.1 — V IF = –7A, VGS = 0
Body–drain diode reverse
recovery time trr — 65 — ns IF = –7A, VGS = 0
diF/ dt = 50A/µs
Note: 4. Pulse test
2SJ528(L),2SJ528(S)
4
Main Characteristics
40
30
20
10
050 100 150 200
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3 –1 –3 –10
–10
–8
–6
–4
–2
0–2 –4 –6 –8 –10 0 –1–2–3–4–5
–30 –100
–100
–30
–3.5 V
–3 V
–10
–8
–6
–4
–2 –25 °C
25 °C
Tc = 75 °C
–10 V
–6 V
–5 V
Ta = 25 °C
100 µs
1 ms
10 µs
DS
Pulse Test
V = –10 V
–4 V
V = –2.5 V
GS
Pulse Test
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
DC Operation (Tc=25 )
2SJ528(L),2SJ528(S)
5
–2.0
–1.6
–1.2
–0.8
–0.4
0–4 –8 –12 –16 –20
0.5
0.4
0.3
0.2
0.1
–40 0 40 80 120 160
0
–10 V
GS
V = –4 V
1
0.5
0.05
0.02
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
–2 A
–1 A
0.2
0.1 –10 V
V = –4 V
GS
Pulse Test
Pulse Test
Pulse Test
–0.1 –3 –100
0.1
30
100
10
1
0.3
–0.3 –1 –10 –30
3
–5 A
–2 A
–1 A
75 °C
25 °C
Ta = –25 °C
V = –10 V
DS
Pulse Test
-1,–2 A
–5 A
I = –5 A
D
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
2SJ528(L),2SJ528(S)
6
500
200
100
20
50
10
5
–0.1 –0.3 –3 0 –10 –20 –30 –40 –50
5000
1000
300
100
0
–20
–40
–60
–80
0
0
–4
–8
–12
–16
–20–100 81624
32 40
1000
100
300
30
3
10
1
–0.1 –0.3 –1 –3 –10 –20
–1 –10
30
10
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
DS
V
GS
V
D
I = –7 A
V = –10 V
–25 V
–50 V
DD
V = –10 V
–25 V
–50 V
DD
tf
r
t
d(off)
t
d(on)
t
DD
V = –10 V, V = –30 V
Pw = 5 µs, duty < 1 %
GS
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
–20
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
2SJ528(L),2SJ528(S)
7
–10
–8
–6
–4
–2
0–0.4 –0.8 –1.2 –1.6 –2.0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50W
Vin
–15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
V = 0, 5 V
GS
–10 V
–5 V
Pulse Test 10
8
6
4
2
25 50 75 100 125 150
0
I = –7 A
V = –25 V
duty < 0.1 %
Rg > 50
AP
DD
W
Repetitive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
2SJ528(L),2SJ528(S)
8
Vin Monitor
D.U.T.
Vin
–10 V
RL
V
= –30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50W
90%
10%
tf
Switching Time Test Circuit Waveform
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
q g q
q
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
g
Normalized Transient Thermal Impedance vs. Pulse Width
2SJ528(L),2SJ528(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(2)
—
—
0.42 g
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
As of January, 2001
Unit: mm
2SJ528(L),2SJ528(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SJ528(L),2SJ528(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
(0.1)(0.1)
2SJ528(L),2SJ528(S)
12
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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