VS-30WQ04FN-M3
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Revision: 22-Nov-16 1Document Number: 93297
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High Performance Schottky Rectifier, 3.5 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-30WQ04FN-M3 surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 3.5 A
VR40 V
VF at IFSee Electrical table
IRM 24 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 8 mJ
Anode
13
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.5 A
VRRM 40 V
IFSM tp = 5 μs sine 500 A
VF3 Apk, TJ = 125 °C 0.49 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30WQ04FN-M3 UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 135 °C, rectangular waveform 3.5
A
Maximum peak one cycle non-repetitive
surge current. See fig. 7 IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
500
10 ms sine or 6 ms rect. pulse 80
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-30WQ04FN-M3
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Revision: 22-Nov-16 2Document Number: 93297
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
3 A TJ = 25 °C 0.53
V
6 A 0.67
3 A TJ = 125 °C 0.49
6 A 0.62
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
2mA
TJ = 125 °C 24
Threshold voltage VF(TO) TJ = TJ maximum 0.34 V
Forward slope resistance rt37.33 m
Typical junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ (1), TStg -40 to +150 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
See fig. 4 4.7 °C/W
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 30WQ04FN
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-30WQ04FN-M3
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Revision: 22-Nov-16 3Document Number: 93297
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
100
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.4 0.8 1.2 1.6 2.0 2.4 2.80
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
0.001
0.01
0.1
1
10
100
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
5 101520253035400
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
10 15 20 25 30 35 40 45
05
TJ = 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
VS-30WQ04FN-M3
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Revision: 22-Nov-16 4Document Number: 93297
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
110
115
120
125
135
140
145
150
130
155
Allowable Case Temperature (°C)
IF (AV) - Average Forward Current (A)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00 0.5 1.0
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
0
0.5
1.0
1.5
2.0
2.5
3.0
Average Power Loss (W)
IF (AV) - Average Forward Current (A)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00 0.5 1.0
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10
100
1000
I
FSM
- Non- Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100 1000 10 00010
At any rated load condition
and with rated VRRM applied
following surge
VS-30WQ04FN-M3
www.vishay.com Vishay Semiconductors
Revision: 22-Nov-16 5Document Number: 93297
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30WQ04FN-M3 75 3000 Antistatic plastic tube
VS-30WQ04FNTR-M3 2000 2000 13" diameter reel
VS-30WQ04FNTRL-M3 3000 3000 13" diameter reel
VS-30WQ04FNTRR-M3 3000 3000 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95288
www.vishay.com/doc?95630
1- Vishay Semiconductors product
2- Current rating (3.5 A)
3- Package identifier:
W = D-PAK
4- Schottky “Q” series
5- Voltage rating (04 = 40 V)
6- FN = TO-252AA (D-PAK)
7- None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
8
Device code
51 32 4 6 7 8
VS- 30 W Q 04 FN TRL -M3
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Jun-16 1Document Number: 95627
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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