VQ3001J/P
Vishay Siliconix
Document Number: 70221
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-1
Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85
P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6
FEATURES BENEFITS APPLICATIONS
DLow On-Resistance: 0.8/1.6 W
DLow Threshold: 1.5/–3.1 V
DLow Input Capacitance: 38/60 pF
DFast Switching Speed: 9/16 ns
DLow Input and Output Leakage
DLow Offset Voltage
DLow-Voltage Operation
DEasily Driven Without Buffer
DHigh-Speed Circuits
DLow Error Voltage
DDirect Logic-Level Interface: TTL/CMOS
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DSolid-State Relays
Plastic: VQ3001J
Sidebraze: VQ3001P
S3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D1D4
S1S4
G1G4
NC NC
G2G3
S2
D2D3
N
P
P
N
Device Marking
Top View
VQ3001J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot T raceability
xxyy = Date Code
VQ3001P
“S” fllxxyy
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Parameter Symbol N-Channel P-Channel Total Quad Unit
Drain-Source Voltage VDS 30 30
VQ3001J "20 "20 V
Gate-Source Voltage VQ3001P VGS "20 "20
Continuous Drain Current TA= 25_C0.85 –0.6
Continuous Drain Current
(TJ = 150_C) TA= 100_CID0.52 –0.37 A
Pulsed Drain CurrentaIDM 3 –2
TA= 25_C1.3 1.3 2
Power Dissipation TA= 100_CPD0.52 0.52 0.8 W
Thermal Resistance, Junction-to-Ambient RthJA 96.2 96.2 62.5 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
VQ3001J/P
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70221
S-04279—Rev. D, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
N-Channel P-Channel
Parameter Symbol Test Condition TypaMin Max Min Max Unit
Static
Drain-Source VGS = 0 V, ID = 10 mA55 30
Drain-Source
Breakdown Voltage V(BR)DSS VGS = 0 V, ID = –10 mA–55 –30
Gate-Source VDS = VGS, ID = 1 mA 1.5 0.8 2.5 V
Gate-Source
Threshold Voltage VGS(th) VDS = VGS, ID = –1 mA –3.1 –2–4.5
VDS = 0 V, VGS = "20 V "100 "100
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C"500 "500 nA
VDS = 24 V, VGS = 0 V 10
Zero-Gate VDS = –24 V, VGS = 0 V –10
m
Zero-Gate
Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C500 mA
VDS = –24 V, VGS = 0 V, TJ = 125_C–500
VDS = 10 V, VGS = 12 V 3 2
On-State Drain CurrentbID(on) VDS = –10 V, VGS = –12 V –2–1.5 A
VGS = 5 V, ID = 0.2 A 1.2 1.75
VGS = 12 V, ID = 1 A 0.81 1.0
Drain-Source
On-State ResistancebrDS(on) VGS = –12 V, ID = –1 A 1.6 2.0 W
On-State Resistance VGS = 12 V, ID = 1 A, TJ = 125_C1.65 2.0
VGS = –12 V, ID = –1 A, TJ = 125_C2.7 4.0
VDS = 10 V, ID = 0.5 A 500 250
Forward T ransconductancebgfs VDS = –10 V, ID = –0.5 A 390 200 mS
Dynamic
38 110
Input Capacitance Ciss 60 150
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz 33 110
Output Capacitance Coss P-Channel 45 100 pF
VDS = –15 V, VGS = 0 V, f = 1 MHz 8 35
Reverse Transfer Capacitance Crss 15 60
N-Channel
W
9 30
T urn-On Time tON VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W19 30
P-Channel
W
14 30 ns
Turn-Off Time tOFF VDD = –15 V, RL = 23 W
ID ^ –0.6 A, VGEN = –10 V, RG = 25 W16 30
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNDQ03/VPEA03
b. Pulse test: PW v300 ms duty cycle v2%.
VQ3001J/P
Vishay Siliconix
Document Number: 70221
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) N-CHANNEL
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A) TJ – Junction Temperature (_C)
2.0
012345
1.6
1.2
0.8
0.4
0
6 V
5 V
4 V
3 V
2 V
7 V 200
0 0.4 0.8 1.2 1.6 2.0
160
120
80
40
01.7 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
500
400
300
001 5
200
100
234
–55_C
25_C
TJ = 125_C
2.5
2.0
1.5
00 1.0
1.0
0.5
2.0 3.0
0 4 8 12 16 20
3
2
0
1
2.25
2.00
1.75
0.50 –50 –10 150
1.50
1.25
30 70 110
1.00
0.75
0.1 A
10 V
VGS = 10 V
VDS = 15 V ID = 0.2 A
1.0 A
0.5 A
VGS = 4.5 V
6 V
10 V
ID = 0.5 A
VGS = 10 V
0.5 1.5 2.5
ID – Drain Current (A)
ID – Drain Current (mA)
ID – Drain Current (mA)
rDS(on) – On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
VQ3001J/P
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70221
S-04279—Rev. D, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) N-CHANNEL
0.1 1 10
100
10
1
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
td(on)
Threshold Region Capacitance
Gate Charge Load Condition Effects on Switching
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
td(off)
trtf
10
1
0.6 0.8 2.01.0 1.2 1.4 1.6 1.8
–55_C
0.1
0.01
100_C
25_C
TJ = 150_C
120
100
80
0010 50
60
40
20 30 40
20
6
5
4
00 80 400
3
2
160 240 320
1
24 V
10 50 100
100
10
1
VDD = 25 V
RL = 24 W
VGS = 0 to 10 V
ID = 1 A
500
400
300
00 100 500
200
100
200 300 400
150_C
25_C
TJ = –55_C
ID – Drain Current (mA)
TransconductanceDrive Resistance Effects on Switching
td(on)
td(off)
trtf
ID = 1 A
RG – Gate Resistance (W)
VDS = 7.5 V
300 ms, 1% Duty Cycle
Pulse Test
VDS = 10 V VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS = 15 V
ID – Drain Current (mA)
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
t – Switching Time (ns)
t – Switching Time (ns)
gfs – Forward Transconductance (µS)
VQ3001J/P
Vishay Siliconix
Document Number: 70221
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) P-CHANNEL
0 1000 2000 3000 4000 5000
Gate Charge
Qg – Total Gate Charge (pC)
VDS = –15 V
ID = –1 A
VDS = –24 V
ID = –1 A
–18
–15
–12
–9
–6
–3
0
0.75
0.90
1.05
1.20
1.35
1.50
1.65
–50 –25 0 25 50 75 100 125 150
On-Resistance vs. Junction Temperature
VGS = –4.5 V
ID = –0.5 A
TJ – Junction Temperature (_C)
VGS = –10 V
ID = –0.1 A
–2.0
–1.6
–1.2
–0.8
–0.4
00–1–2–3–4–5
Output Characteristics Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS = –10 V
–5 V
–8 V
–7 V
–6 V
VGS – Gate-to-Source Voltage (V)
–1000
–800
–600
–400
–200
00–2–4–6–8–10
TJ = –55_C25_C
125_C
–4 V
–9 V
Source-Drain Diode Forward Voltage
–1.0 –2.0 –3.0 –4.0
–10 K
–1 K
–1
–100
–10
VSD – Source-to-Drain Voltage (V)
VDS – Drain-to-Source Voltage (V)
Capacitance
175
150
125
100
75
50
25
00–5–10 –15 –20 –25 –30
Crss
Coss
Ciss
VGS = 0 V
f = 1 MHz
0
TJ = 25_C
TJ = 150_C
ID – Drain Current (A)
ID – Drain Current (mA)
C – Capacitance (pF)
VGS – Gate-to-Source Voltage (V)
rDS(on) – On-Resistance ( Ω )
(Normalized)
IS – Source Current (mA)
VQ3001J/P
Vishay Siliconix
www.vishay.com
11-6 Document Number: 70221
S-04279—Rev. D, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) P-CHANNEL
3.0
2.5
2.0
1.5
1.0
00–4–8–12 –16 –20
On-Resistance vs. Gate-to-Source Voltage
VGS – Gate-to-Source Voltage (V)
ID = –0.5 A
–0.2 A
–1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0
Threshold Region
–10 K
–1 K
–1
VGS – Gate-Source Voltage (V)
VDS = –10 V
25_C
–55_C
100_C
TJ = 150_C
–100
–10
rDS(on) – On-Resistance ( Ω )
ID – Drain Current (µA)
