MCMA265PD1600KB preliminary Thyristor \ Diode Module VRRM = 2x 1600 V I TAV = 260 A VT = 1.15 V Phase leg Part number MCMA265PD1600KB Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y1 Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: Copper internally DCB isolated Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170116c MCMA265PD1600KB preliminary Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 300 A TVJ = 140C 30 mA I T = 300 A TVJ = 25C 1.19 V 1.46 V 1.15 V TVJ = 125 C I T = 300 A I T = 600 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1600 V I T = 600 A Ptot max. Unit 1700 V 1.44 V T VJ = 140 C 260 A 408 A TVJ = 140 C 0.80 V 0.75 m 0.16 K/W K/W 0.04 TC = 25C 720 W t = 10 ms; (50 Hz), sine TVJ = 45C 8.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.18 kA t = 10 ms; (50 Hz), sine TVJ = 140 C 7.23 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 7.81 kA t = 10 ms; (50 Hz), sine TVJ = 45C 361.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 350.6 kAs t = 10 ms; (50 Hz), sine TVJ = 140 C 261.0 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 253.4 kAs 366 t P = 500 s pF 120 W 60 W 20 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 140 C; f = 50 Hz repetitive, IT = 750 A t P = 200 s; di G /dt = 1 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 3 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 220 mA VGD gate non-trigger voltage TVJ = 140C 0.25 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 200 mA IG = 1 A; V = VDRM 100 A/s non-repet., I T = 268 A 500 A/s 1000 V/s TVJ = 140C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 30 s 2 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 150 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 1 A/s VR = 100 V; I T = 300 A; V = VDRM TVJ =125 C 200 s 50 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20170116c MCMA265PD1600KB preliminary Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 140 C -40 125 C 125 C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute Production Index (PI) Date Code (DC) 50/60 Hz, RMS; IISOL 1 mA 16.0 mm 16.0 mm 4800 V 4000 V Part description M C M A 265 PD 1600 KB Circuit yywwAA Part Number Lot.No: xxxxxx = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] Y1-CU Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MCMA265PD1600KB Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA265PD1600KB * on die level Delivery Mode Box Code No. 509202 T VJ = 140 C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.51 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20170116c MCMA265PD1600KB preliminary Outlines Y1 3x M8 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 15 1 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20170116c MCMA265PD1600KB preliminary Thyristor 800 10 100 TVJ = 25C 700 1: IGT, TVJ = 130C 2: IGT, T4 = 25C 3: IGT, TVJ = -40C 3 600 IT, IF 2 10 500 400 1 limit [s] 300 4 1 VG tgd [A] 6 5 [V] typ. 1 200 TVJ = 125C IGD, TVJ = 130C 100 TVJ = 25C 0 0.0 0.5 1.0 1.5 0.1 0.01 2.0 VT, VF [A] 0.10 1.00 0.1 10-3 10.00 10-1 IG [A] Fig. 1 Forward voltage drop 100 101 102 IG [A] Fig. 2 Gate trigger delay time 0.25 Fig. 3 Gate trigger characteristics RthJC for various conduction angles d: 0.20 ZthJC 0.15 [K/W] 30 60 120 180 DC 0.10 0.05 0.00 10-3 10-2 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 10-2 10-1 100 d RthJC (K/W) DC 180 120 60 30 0.157 0.168 0.177 0.200 0.243 Constants for Zth calculation: i 1 2 3 4 101 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 ti (s) 0.0054 0.098 0.54 12 102 t [s] Fig. 4 Transient thermal impedance junction to case (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170116c Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MCMA265PD1600KB