October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x . 400 2N LFL (S042)
hermet ica lly se aled
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.POUT = 250 W MIN. WITH 6.2 dB GAIN
DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique
AMPAC™ package with internal input/output
matching structures.
PIN CONNECTION
BRANDING
81250M
OR DER COD E
MSC81250M
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 80˚C) 60 0 W
ICDevice Current* 17 .8 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature (Pulsed RF Operation) 25 0 °C
TSTG Storage Temperature − 65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W
*Applies only to rated RF amplifier operation
MSC81250M
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symb ol Test C ond iti ons Value Unit
Min. Typ. Max.
POUT f = 1025 — 1150 MHz PIN = 60 W VCC = 50 V 250 270 — W
ηcf = 1025 — 1150 MHz PIN = 60 W VCC = 50 V 40 38 — %
GPf = 1025 — 1150 MHz PIN = 60 W VCC = 50 V 6.2 6.5 — dB
N ote: Pu ls e Widt h =10µSec
Duty Cycle =1%
STATIC
Symbol Test Co nditions Value Unit
Min. Typ. Max.
BVCBO IC = 10mA IE = 0mA 65 — — V
BVEBO IE = 1mA IC = 0mA 3.5 — — V
BVCER IC = 25mA RBE = 10Ω65 — — V
ICES VCE = 50V — — 25 mA
hFE VCE = 5V IC = 1A 15 — 120 —
DYNAMIC
MSC81250M
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TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
PIN = 60 W
VCC = 50 V
Normalized to 50 ohms
PIN = 60 W
VCC = 50 V
Normalized to 50 ohms
IMPEDANCE DATA
ZIN
ZCL
FREQ. ZIN (Ω)Z
CL (Ω)
L = 1025 MHz 4.2 + j 6.7 2.0 − j 7.5
M = 1090 MHz 4.0 + j 3.5 2.5 − j 7.5
H = 1150 MHz 2.3 + j 2.3 2.5 − j 8.5
MSC81250M
3/5
Ref.: Dwg. No. C127470
PACKAGE MECHANICAL DATA
All dimensions are in inches.
TEST CIRCUIT
MSC81250M
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC81250M
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