MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5964-8SL-422
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Po= 28.5dBm, G1dB=8.0dB(Min.) at 5.85GHz to 6.75GHz
Single Carrier Level BROAD BAND INTERN ALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=39.5dBm at 5.85GHz to 6.75GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 38.5 39.5 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 8.0 ⎯ ⎯
Drain Current IDS1 A ⎯ 2.2 2.6
Gain Flatness ΔG dB ⎯ ⎯ ±0.6
Power Added Efficiency ηadd
VDS=10V
f= 5.85 to 6.75GHz
% ⎯ 35 ⎯
3
rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=28.5dBm
(Single Carrier Level) A ⎯ 2.2 2.6
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 80
Recommended gate resistance(Rg) : Rg= 150 Ω (MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance Gm V
DS= 3V
I
DS= 3.0A mS ⎯ 1800 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 30mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 5.2 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -100μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 2.5 3.8
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul. 2006
TIM5964-8SL-422
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 7.0
Total Power Dissipation (Tc= 25 °C) PT W 39.5
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM5964-8SL-422
RF PERFORMANCE
3
Output Power vs. Frequency
37
38
39
40
41
42
5.75 6.00 6.25 6.50 6.75
Output Power vs. Frequency
VDS= 10 V
IDS≅ 2.2 A
Pin= 30.5 dBm
Po (dBm)
Po
(
dBm
)
Frequency (GHz)
Frequency (GHz)
Output Power vs. Input Power
Po
ηadd
33
35
37
39
41
24 26 28 30 32
Pin (dBm)
Po (dBm)
10
20
30
40
50
60
70
80
90
100
Out
p
ut Power vs. In
p
ut Power
f=6.75 GHz
VDS= 10 V
IDS≅ 2.2 A
Po
Po(dBm)
ηadd(%)
η
add
Pin(dBm)
TIM5964-8SL-422
POWER DISSIPATION VS. CASE TEMPERATURE
0
5
10
15
20
25
30
35
40
45
50
0 40 80 120 160 200
Tc (℃)
PT (W)
Power Dissipation vs. Case Temperature
Tc
(
°C
)
PT(W)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-60
-50
-40
-30
-20
-10
24 26 28 30 32 34
Po (dBm), Single Carrier Level
IM3 (dBc)
VDS= 10 V
IDS≅ 2.2 A
f= 6.3GHz
Δf= 5MHz
IM3 vs. Out
p
ut Power Characteristics
Po(dBm), Single Carrier Level
IM3(dBc)
4
