DMC3036LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS N-CH 30V P-CH -30V RDS(ON) max 36m @ VGS = 10V 61m @ VGS = 4.5V 36m @ VGS = -10V 64m @ VGS = -4.5V Features Package ID TA = +25C SO-8 6.9A 5.1A -6.0A -5.0 * * * * * * Description Mechanical Data * * This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * Applications * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability * Motor control Power Management Functions DC-DC Converters Inverter Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072g (approximate) SO-8 Top View D2 S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 S2 Top View Internal Schematic D1 N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 4) Part Number DMC3036LSD-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information ( Top View ) 8 5 Logo C3036LD Part no. YY WW 1 DMC3036LSD Document number: DS31311 Rev. 6 - 2 4 1 of 8 www.diodes.com Xth week: 01~52 Year : "07" =2007 "08" =2008 August 2012 (c) Diodes Incorporated DMC3036LSD Maximum Ratings N-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) ID ID IS IDM Value 30 20 5.0 4.0 6.9 5.8 2 24 Units V V A A A A Maximum Ratings P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State t<10s TA = +25C TA = +70C TA = +25C TA = +70C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) ID ID IS IDM Value -30 20 -4.5 -3.5 -6 -5 -2 -21 Units V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol Steady State t<10s Steady State t<10s Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Notes: PD RJA RJC TJ, TSTG Value 1.5 2.5 83 49 15 -55 to 150 Units W C/W C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMC3036LSD Document number: DS31311 Rev. 6 - 2 2 of 8 www.diodes.com August 2012 (c) Diodes Incorporated DMC3036LSD Electrical Characteristics N-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1 100 V A nA VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 1 2.1 36 61 |Yfs| VSD 28 51 7.7 V 0.5 1.2 S V VDS = VGS, ID = 250A VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A VDS = 5V, ID = 6.9A VGS = 0V, IS = 1A Ciss Coss Crss RG 431 55 48 1.3 pF pF pF Total Gate Charge Qg 3.8 Gate-Source Charge Gate-Drain Charge Qgs Qgd 1.4 1.7 OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 7) VGS(th) RDS (ON) 7.9 m nC Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VGS = 0V VDS = 0V, f = 1MHz VDS = 10V, VGS = 4.5V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A VDS = 10V, VGS = 10V, ID = 10A Electrical Characteristics P-CHANNEL (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 -1.0 100 V A nA VGS = 0V, ID = -250A VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) 30 53 8.8 -2.2 36 64 V |Yfs| VSD -1 -0.5 -1.2 S V VDS = VGS, ID = -250A VGS = -10V, ID = -6A VGS = -4.5V, ID = -5A VDS =-5V, ID = -6A VGS = 0V, IS = -1A Ciss Coss Crss RG 977 129 116 13.1 pF pF pF Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd 10.1 21.1 2.8 3.2 OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS (Note 7) Notes: RDS (ON) m nC Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VDS = 15V, VGS = -4.5V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A VDS = 15V, VGS = -10V, ID = 6A 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMC3036LSD Document number: DS31311 Rev. 6 - 2 3 of 8 www.diodes.com August 2012 (c) Diodes Incorporated DMC3036LSD N-CHANNEL 30 30 VGS = 10V VGS = 4.5V VDS = 5.0V 25 VGS = 4.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 20 VGS = 3.5V 15 VGS = 3.3V 10 VGS = 3.0V 20 15 10 TA = 125C 5 5 T A = 85C TA = 25C VGS = 2.5V 0.10 0.09 0.08 0.07 0.06 0.05 VGS = 3.3V 0.04 VGS = 4.5V 0.03 VGS = 10V 0.02 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.10 0.09 0.08 ID = 5.0A 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 30 0 1.6 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 2.0 VGS = 4.5V ID = 5A VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = -55C 0 1.4 VGS = 10V ID = 10A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMC3036LSD Document number: DS31311 Rev. 6 - 2 1.6 1.2 ID = 250A 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 Gate Threshold Variation vs. Ambient Temperature 4 of 8 www.diodes.com August 2012 (c) Diodes Incorporated DMC3036LSD 10 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss f = 1MHz 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Junction Capacitance DMC3036LSD Document number: DS31311 Rev. 6 - 2 30 5 of 8 www.diodes.com VDS = 3.3V ID = 10A 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate Charge 9 10 August 2012 (c) Diodes Incorporated DMC3036LSD P-CHANNEL 30 30 VGS = -10V VGS = -4.5V VGS = -4.0V 20 VGS = -3.5V 15 VGS = -3.3V 10 VGS = -3.0V 20 15 10 5 VGS = -2.5V 0 0.09 0.08 0.07 VGS = -3.3V 0.06 0.05 VGS = -4.5V 0.04 0.03 VGS = -10V 0.02 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 9 Typical Output Characteristics 0.10 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 11 Typical On-Resistance vs. Drain Current and Gate Voltage 0 TA = 85C TA = 25C T A = -55C 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 10 Typical Transfer Characteristics 5 0.09 0.08 0.07 0.06 ID = -5.0A 0.05 0.04 0.03 0.02 0.01 0 0 2 4 6 8 10 12 14 16 18 20 -VGS, GATE-SOURCE VOLTAGE (V) Figure 12 Typical Drain-Source On-Resistance vs. Gate-Source Voltage VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 1.4 1.2 1.0 TA = 125C 0.10 30 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 150C 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VDS = -5.0V 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -10V ID = -10A VGS = -3.3V ID = -5A 0.8 0.6 -50 VGS = -4.5V ID = -5A -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 13 On-Resistance Variation with Temperature DMC3036LSD Document number: DS31311 Rev. 6 - 2 2.0 1.5 ID = -250A 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Figure 14 Gate Threshold Variation vs. Ambient Temperature 6 of 8 www.diodes.com August 2012 (c) Diodes Incorporated DMC3036LSD 10,000 10 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 1,000 Ciss Coss 100 10 Crss 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 15 Typical Junction Capacitance 8 4 2 0 30 VDS = -3.3V ID = -6A 6 0 2 4 6 8 10 12 14 16 18 Qg , TOTAL GATE CHARGE (nC) Figure 16 Gate-Charge Characteristics 20 Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail `A' 7~9 h 45 Detail `A' A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMC3036LSD Document number: DS31311 Rev. 6 - 2 7 of 8 www.diodes.com August 2012 (c) Diodes Incorporated DMC3036LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2012, Diodes Incorporated www.diodes.com DMC3036LSD Document number: DS31311 Rev. 6 - 2 8 of 8 www.diodes.com August 2012 (c) Diodes Incorporated