DMC3036LSD-13 - Diodes - Datasheet.Live

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 1 of 8

www.diodes.com August 2012

DMC3036LSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device V(BR)DSS R

DS(ON) max Package ID

TA = +25°C

N-CH 30V 36mΩ @ VGS = 10V

SO-8

6.9A

61mΩ @ VGS = 4.5V 5.1A

P-CH -30V

36mΩ @ VGS = -10V -6.0A

64mΩ @ VGS = -4.5V -5.0

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Description

This MOSFET has been designed to minimize the on-state

resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• Motor control

• Power Management Functions

• DC-DC Converters

• Inverter

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.072g (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMC3036LSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

SO-8

Top View Top View

Internal Schematic

D

1

S

1

G

1

D

2

S

2

G

2

N-Channel MOSFET P-Channel MOSFET

S2

D1

S1

D2

G1

G2 D2

D1

e3

( Top View )

Logo

Part no.

Year: "07" =2007

"08" =2008

Xth w eek: 01~52

1 4

8 5

C3036LD

YY WW

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 2 of 8

www.diodes.com August 2012

DMC3036LSD

Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State TA = +25°C

TA = +70°C ID 5.0

4.0 A

t<10s TA = +25°C

TA = +70°C ID 6.9

5.8 A

Maximum Continuous Body Diode Forward Current (Note 5) IS 2 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 24 A

Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = -10V

Steady

State TA = +25°C

TA = +70°C ID -4.5

-3.5 A

t<10s TA = +25°C

TA = +70°C ID -6

-5 A

Maximum Continuous Body Diode Forward Current (Note 5) IS -2 A

Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -21 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Steady State PD 1.5 W

t<10s 2.5

Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 83 °C/W

t<10s 49

Thermal Resistance, Junction to Case (Note 5) R

θ

JC 15

Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 3 of 8

www.diodes.com August 2012

DMC3036LSD

Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 24V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

1 ⎯ 2.1 V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance RDS (ON) ⎯

⎯ 28

51 36

61 mΩ VGS = 10V, ID = 6.9A

VGS = 4.5V, ID = 5.0A

Forward Transfer Admittance |Yfs| ⎯ 7.7 ⎯ S VDS = 5V, ID = 6.9A

Diode Forward Voltage VSD 0.5 ⎯ 1.2 V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss ⎯ 431 ⎯ pF VDS = 15V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 55 ⎯ pF

Reverse Transfer Capacitance Crss ⎯ 48 ⎯ pF

Gate Resistance RG ⎯ 1.3 ⎯ Ω VGS = 0V VDS = 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 7)

Total Gate Charge Qg ⎯ 3.8

7.9 ⎯ nC

VDS = 10V, VGS = 4.5V, ID = 10A

VDS = 10V, VGS = 10V, ID = 10A

Gate-Source Charge Q

g

s ⎯ 1.4 ⎯ VDS = 10V, VGS = 10V, ID = 10A

Gate-Drain Charge Q

g

d ⎯ 1.7 ⎯ VDS = 10V, VGS = 10V, ID = 10A

Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 µA VDS = -24V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

-1 ⎯ -2.2 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) ⎯

⎯ 30

53 36

64 mΩ VGS = -10V, ID = -6A

VGS = -4.5V, ID = -5A

Forward Transfer Admittance |Yfs| ⎯ 8.8 ⎯ S VDS =-5V, ID = -6A

Diode Forward Voltage VSD -0.5 ⎯ -1.2 V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss ⎯ 977 ⎯ pF VDS = -15V, VGS = 0V, f = 1.0MHz

Output Capacitance Coss ⎯ 129 ⎯ pF

Reverse Transfer Capacitance Crss ⎯ 116 ⎯ pF

Gate Resistance RG ⎯ 13.1 ⎯ Ω V

GS = 0V, VDS = 0V, f = 1MHz

SWITCHING CHARACTERISTICS (Note 7)

Total Gate Charge Qg ⎯ 10.1

21.1 ⎯ nC

VDS = 15V, VGS = -4.5V, ID = 6A

VDS = 15V, VGS = -10V, ID = 6A

Gate-Source Charge Q

g

s ⎯ 2.8 ⎯ VDS = 15V, VGS = -10V, ID = 6A

Gate-Drain Charge Q

g

d ⎯ 3.2 ⎯ VDS = 15V, VGS = -10V, ID = 6A

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subje c t to produ ct testing.

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 4 of 8

www.diodes.com August 2012

DMC3036LSD

N-CHANNEL

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V , DRAIN-SOURCE VOLT AGE (V)

Figure 1 Ty pi cal Output Characte r i st ic

DS

10

15

20

25

30

I, D

R

AIN

C

U

R

EN

T

(A)

D

0

5

V= 2.5V

GS

V= 3.0V

GS

V= 3.5V

GS

V= 4.5V

GS

V = 10V

GS

V= 4.0V

GS

V= 3.3V

GS

10

15

20

25

30

012345

0

5

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical T ransfer Characteristics

I, D

R

AI

N

C

U

R

E

N

T

(A )

D

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V = 5.0V

DS

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0 5 10 15 20 25 30

0.10

0

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Curre n t and Gate Volt age

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESI STANCE ( )

DS(ON)

Ω

V = 4.5V

GS

V = 10V

GS

V = 3.3V

GS

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0 2 4 6 8101214161820

0.10

0

V , GATE-SOURCE VOLT AGE (V)

GS

Fig ur e 4 Typical D rain- S ource On- Resis tance

vs. Gate-Source Voltage

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

I= 5.0A

D

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Fig ur e 5 On- R esistance Variati on wit h Temperature

J

°

0.6

0.8

1.0

1.2

1.4

1.6

R

, D

R

AIN-S

O

U

R

C

E

ON-RESIST ANCE (NORMALIZED)

DS(ON)

V=4.5V

I= 5A

GS

D

V=V

I= 10A

GS

D

10

0.4

0.8

1.2

1.6

2.0

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(th)

0

I = 250µA

D

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 6 Gate Threshold Variation vs. Ambient Temperature

J

°

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 5 of 8

www.diodes.com August 2012

DMC3036LSD

0 5 10 15 20 25 30

1,000

C

, J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

A

N

C

E (p

F

)

T

100

10

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 7 Typical Junction Capacitance

C

iss

C

oss

C

rss

f = 1MHz

012 34567 8910

Q(nC)

g

, TOTAL GATE CHARGE

Figure 8 Gate Charge

0

2

4

6

8

V

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS

10

V = 3.3V

I= A

DS

D

10

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 6 of 8

www.diodes.com August 2012

DMC3036LSD

P-CHANNEL

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 9 Ty pi cal Output Characte r i st ics

DS

10

15

20

25

30

-I , D

R

AIN

C

U

R

EN

T

(A)

D

0

5

V = -2.5V

GS

V = -3.5V

GS

V = -4.0V

GS

V = -4.5V

GS

V= -10V

GS

V = -3.3V

GS

V = -3.0V

GS

01 2345

10

15

20

25

30

-I , D

R

AIN

C

U

R

EN

T

(A )

D

0

5

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 10 Typical Transfer Characteristics

T = 150C

A

°

T = 125C

A

°

T = 85C

A

°

T = 25C

A

°

T = -55C

A

°

V = -5.0V

DS

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

00 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A)

Figure 11 Typical On-Resistance vs.

Drain Curre nt and Gat e Voltage

D

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE ( )

DS(ON)

Ω

V = -4.5V

GS

V = -10V

GS

V = -3.3V

GS

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0 2 4 6 8 101214161820

0.10

0

-V , GATE-SOURCE VO LTAGE (V)

GS

Fi gur e 12 Typical D r ain-Sour ce On- R esistanc e

vs. G ate- Source Vol t age

R

, D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

I= -5.0A

D

0.6

0.8

1.2

1.4

1.6

1.0

V = -3.3V

I = -5A

GS

D

V = -4.5V

I = -5A

GS

D

V = -10V

I = -10A

GS

D

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig ur e 13 On-Resista nce Variat i on with Temp er at ure

R

, D

R

AIN-S

O

U

R

C

E

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.5

1.0

1.5

2.0

2.5

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E (V)

GS(TH)

0

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

Figure 14 Gate Threshold Variation vs. Ambient Temperature

A

I = -250µA

D

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 7 of 8

www.diodes.com August 2012

DMC3036LSD

10,000

C

, J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

1,000

10

100

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 15 Typical Junction Capacitance

DS

C

oss

C

rss

f = 1MHz

C

iss

0 2 4 6 8 101214161820

Q , T OTAL GATE CHARGE (nC)

Figure 16 Gate-Charge Characteristics

g

0

2

4

6

8

-V ,

G

A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E (V)

GS

10

V = -3.3V

I= -6A

DS

D

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SO-8

Dim Min Max

A - 1.75

A1 0.10 0.20

A2 1.30 1.50

A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82

θ 0° 8°

All Dimensions in mm

Dimensions Value (in mm)

X 0.60

Y 1.55

C1 5.4

C2 1.27

Gauge Plan e

Seating Plane

Det ail ‘A’

E

E1

h

L

D

eb

A2

A1

A

45

°

7

°~

9

°

A3

0.254

X

C1

C2

Y

DMC3036LSD

Document number: DS31311 Rev. 6 - 2 8 of 8

www.diodes.com August 2012

DMC3036LSD

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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