BC517 Darlington Transistors NPN Silicon Features * Pb-Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCES 30 Vdc Collector -Base Voltage VCB 40 Vdc Collector -Emitter Voltage VEB 10 Vdc Collector Current - Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25C Derate above TA = 25C PD 625 12 mW mW/C Total Power Dissipation @ TA = 25C Derate above TA = 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range BASE 2 EMITTER 3 12 TO-92 CASE 29 STYLE 17 3 THERMAL CHARACTERISTICS MARKING DIAGRAM BC 517 AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC517 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 January, 2006 - Rev. 3 1 Package Shipping TO-92 5000 Units / Bulk TO-92 (Pb-Free) 5000 Units / Bulk TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 2000 / Ammo Pack TO-92 (Pb-Free) 2000 / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC517/D BC517 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 30 - - 40 - - 10 - - - - 500 - - 100 - - 100 30,000 - - - - 1.0 - - 1.4 - 200 - Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 2.0 mAdc, IBE = 0) V(BR)CES Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 30 Vdc) ICES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VCB = 10 Vdc, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Collector -Emitter Saturation Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2. fT = |hfe| * ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MHz BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 0.02 10 20 50k 100k 50 100 200 50k 100k Figure 3. Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 BC517 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200k hFE , DC CURRENT GAIN TJ = 125C 25C 30k 20k 10k 7.0k 5.0k -55 C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 100k 70k 50k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RqVC FOR VCE(sat) -55 C TO 25C -3.0 25C TO 125C -4.0 qVB FOR VBE -5.0 -55 C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) * RqJCTJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) * RqJATJ(pk) - TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) () RESISTANCE (NORMALIZED) BC517 300 200 FIGURE A 1.0 ms TA = 25C tP TC = 25C 100 ms PP 1.0 s 100 70 50 t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 PP 0.4 0.6 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 40 Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC517 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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