BC517RL1 - ON Semiconductor

January, 2006 − Rev. 3 1Publication Order Number:

BC517/D

BC517

Darlington Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCES 30 Vdc

Collector−Base Voltage VCB 40 Vdc

Collector−Emitter Voltage VEB 10 Vdc

Collector Current − Continuous IC1.0 Adc

Total Power Dissipation @ TA = 25°C

Derate above TA = 25°CPD625

12 mW

mW/°C

Total Power Dissipation @ TA = 25°C

Derate above TA = 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junc tion−to−A m bient RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

BC517 TO−92 5000 Units / Bulk

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

MARKING DIAGRAM

TO−92

CASE 29

STYLE 17

123

BC517G TO−92

(Pb−Free) 5000 Units / Bulk

(Note: Microdot may be in either location)

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517

AYWW G

BC517RL1 TO−92 2000 / Tape & Ree

BC517ZL1 TO−92 2000 / Ammo Pack

BC517RL1G TO−92

(Pb−Free) 2000 / Tape & Ree

BC517ZL1G TO−92

(Pb−Free) 2000 / Ammo Pack

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

COLLECTOR 1

BASE

EMITTER 3

BC517

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IBE = 0) V(BR)CES 30 − − Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0) V(BR)CBO 40 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0) V(BR)EBO 10 − − Vdc

Collector Cutoff Current

(VCE = 30 Vdc) ICES − − 500 nAdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc

Emitter Cutoff Current

(VCB = 10 Vdc, IC = 0) IEBO − − 100 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 20 mAdc, VCE = 2.0 Vdc) hFE 30,000 − − −

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) − − 1.0 Vdc

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) − − 1.4 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT− 200 − MHz

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.

2. fT = |hfe|• ftest

RSin

enIDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

BC517

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NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

Figure 2. Noise Voltage

f, FREQUENCY (Hz)

100

200

500

Figure 3. Noise Current

f, FREQUENCY (Hz)

Figure 4. Total Wideband Noise Voltage

RS, SOURCE RESISTANCE (kW)

Figure 5. Wideband Noise Figure

RS, SOURCE RESISTANCE (kW)

5.0

100

200

1.0

20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

BANDWIDTH = 1.0 Hz

RS ≈ 0

IC = 1.0 mA

100 mA

10 mA

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 mA

10 mA

en, NOISE VOLTAGE (nV)

in, NOISE CURRENT (pA)

2.0 5.0 10 20 50 100 200 500 1000

BANDWIDTH = 10 Hz TO 15.7 kHz

IC = 10 mA

100 mA

1.0 mA

8.0

6.0

4.0

1.0 2.0 5.0 10 20 50 100 200 500 1000

2.0

BANDWIDTH = 10 Hz TO 15.7 kHz

10 mA

100 mA

IC = 1.0 mA

VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

NF, NOISE FIGURE (dB)

10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BC517

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SMALL−SIGNAL CHARACTERISTICS

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

5.0

7.0

3.0

Figure 7. High Frequency Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

200k

5.0

0.04

4.0

2.0

1.0

0.8

0.6

0.4

0.2

TJ = 25°C

C, CAPACITANCE (pF)

1.5

2.0

2.5

3.0

1.0

0.5

|hfe|, SMALL−SIGNAL CURRENT GAIN

hFE, DC CURRENT GAIN

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40

Cibo

Cobo

0.5 1.0 2.0 0.5 10 20 50 100 200 500

VCE = 5.0 V

f = 100 MHz

TJ = 25°C

100k

70k

50k

30k

20k

10k

7.0k

5.0k

3.0k

2.0k 7.0 10 20 30 50 70 100 200 300 500

TJ = 125°C

25°C

−55 °C

VCE = 5.0 V

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

TJ = 25°C

IC = 10 mA 50 mA 250 mA 500 mA

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.6

5.0

−1.0

V, VOLTAGE (VOLTS)

1.4

1.2

1.0

0.8

0.6 7.0 10 20 30 50 70 100 200 300 500

VBE(sat) @ IC/IB = 1000

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

TJ = 25°C

VBE(on) @ VCE = 5.0 V

VCE(sat) @ IC/IB = 1000

−2.0

−3.0

−4.0

−5.0

−6.0

5.0 7.0 10 20 30 50 70 100 200 300 500

25°C TO 125°C

−55 °C TO 25°C

*RqVC FOR VCE(sat)

qVB FOR VBE

25°C TO 125°C

−55 °C TO 25°C

*APPLIES FOR IC/IB ≤ hFE/3.0

BC517

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Figure 12. Thermal Response

t, TIME (ms)

1.0

()

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0k

0.4

700

500

300

200

100

10 0.6 1.0 2.0 4.0 6.0 10 20 40

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)

ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)

1.0 ms

100 ms

TC = 25°C

1.0 s

Design Note: Use of Transient Thermal Resistance Dat

FIGURE A

PPPP

1/f

DUTYCYCLE +t1f +

PEAK PULSE POWER = PP

BC517

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

TO−92 (TO−226)

CASE 29−11

ISSUE AL

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

BC517/D

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