Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 69
IDM Pulsed Drain Current À300
PD @ TC = 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á363 mJ
IAR Avalanche Current À75 A
EAR Repetitive Avalanche Energy À25 mJ
dv/dt Peak Diode Recovery dv/dt Â6.0 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
oC
A
RADIATION HARDENED JANSR2N7469U2
POWER MOSFET 100V, N-CHANNEL
SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/673
10/27/11
www.irf.com 1
* Current is limited by package
SMD-2
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA57160 100K Rads (Si) 0.012Ω 75A* JANSR2N7469U2
IRHNA53160 300K Rads (Si) 0.012Ω 75A* JANSF2N7469U2
IRHNA54160 500K Rads (Si) 0.012Ω 75A* JANSG2N7469U2
IRHNA58160 1000K Rads (Si) 0.013Ω 75A* JANSH2N7469U2
Features:
nSingle Event Effect (SEE) Hardened
nUltra Low RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nCeramic Package
nLight Weight
For footnotes refer to the last page
55
IRHNA57160
TECHNOLOGY
PD-91860J
IRHNA57160, JANSR2N7469U2 Pre-Irradiation
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.5
RthJ-PCB Junction-to-PC board — 1.6 — soldered to a 2 square copper-clad board
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 75*
ISM Pulse Source Current (Body Diode) À— — 300
VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 75A, VGS = 0V Ã
trr Reverse Recovery Time — — 300 ns Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 2.2 µCV
DD ≤ 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.115 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.012 ΩVGS = 12V, ID = 69A
Resistance
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 42 — — S VDS ≥ 15V, IDS = 69A Ã
IDSS Zero Gate Voltage Drain Current — — 10 VDS = 80V ,VGS = 0V
——25 V
DS = 80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 160 VGS =12V, ID = 45A
Qgs Gate-to-Source Charge — — 55 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 65
td(on) Turn-On Delay Time — — 35 VDD = 50V, ID = 45A,
trRise Time — — 125 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 75
tfFall Time — — 50
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 6440 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 1660 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 60 —
nA
Ã
nH
ns
µA
Measured from the center of
drain pad to center of source pad
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IRHNA57160, JANSR2N7469U2
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter Up to 500K Rads(Si)1 1000K Rads (Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 10 — 25 µA VDS=80V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.013 — 0.014 Ω VGS = 12V, ID = 45A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source à — 0.012 — 0.013 Ω VGS = 12V, ID = 45A
On-State Resistance (SMD-2)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNA57160 (JANSR2N7469U2), IRHNA53160 (JANSF2N7469U2) and IRHNA54160 (JANSG2N7469U2)
2. Part number IRHNA58160 (JANSH2N7469U2)
Fig a. Typical Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage à — 1.2 — 1.2 V VGS = 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Typical Single Event Effect Safe Operating Area
LET Ener
g
y Ran
g
eVDS (V)
(
MeV/
(
m
g
/cm2
))
(
MeV
)
(µ
m
)
@VGS = @VGS = @VGS = @VGS = @VGS =
0V -5V -10V -15V -20V
38 ± 5% 300 ± 7.5% 38 ± 7.5% 100 100 100 100 100
61 ± 5% 330 ± 7.5% 31 ± 10% 100 100 100 35 25
84 ± 5% 350 ± 10% 28 ± 7.5% 100 100 80 25 -
0
20
40
60
80
100
120
-20-15-10-50
Bias VGS (V)
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
IRHNA57160, JANSR2N7469U2 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1525V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
75A
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IRHNA57160, JANSR2N7469U2
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
040 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
75A
V = 20V
DS
V = 50V
DS
V = 80V
DS
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Pre-Irradiation
45A
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µs
DC
IRHNA57160, JANSR2N7469U2 Pre-Irradiation
6www.irf.com
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
www.irf.com 7
IRHNA57160, JANSR2N7469U2
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
150
300
450
600
750
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
34A
47A
75A
.
Pre-Irradiation
VGS
IRHNA57160, JANSR2N7469U2 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 0.13mH
Peak IL = 75A, VGS = 12V
 ISD ≤ 75A, di/dt ≤ 340A/µs,
VDD ≤ 100V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2011
