Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ SO-8 similar area footprint and pin assignment BVDSS 30V
▼ Low Gate Charge RDS(ON) 6mΩ
▼ Fast Switching Speed ID75A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
EAS Single Pulse Avalanche Energy4mJ
IAR Avalanche Current A
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 2 ℃/W
Rthj-a Thermal Resistance Junction-ambient3Max. 85 ℃/W
Data & specifications subject to change without notice
AP0603GMA
Rating
Pb Free Plating Product
Continuous Drain Current, VGS @ 10V
62.5
-55 to 150
55
300
29
24
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Gate-Source Voltage
Parameter
Operating Junction Temperature Range
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Thermal Data
30
0.5
-55 to 150
200401053-1/4
±20
75
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
SSSG
D
APAK-5
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.018 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=45A - - 6 mΩ
VGS=4.5V, ID=30A - - 10 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=30A - 32 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V - - 500 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
QgTotal Gate Charge2ID=30A - 33 52 nC
Qgs Gate-Source Charge VDS=24V - 7.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 24 - nC
td(on) Turn-on Delay Time2VDS=15V - 11.2 - ns
trRise Time ID=30A - 77 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 35 - ns
tfFall Time RD=0.5Ω-67-ns
Ciss Input Capacitance VGS=0V - 2700 4200 pF
Coss Output Capacitance VDS=25V - 550 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 380 - pF
RgGate Resistance f=1.0MHz - 1.9 2.8 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=45A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=30A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω
AP0603GMA
2/4
AP0603GM
A
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
0.3
0.6
0.9
1.2
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
30
60
90
120
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC
VG=3.0V
10V
7.0V
5.0V
4.5V
0
30
60
90
120
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
VG=3.0V
10V
7.0V
5.0V
4.5V
TC=150oC
0.5
0.9
1.3
1.7
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=45A
VG=10V
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
Is (A)
Tj=25oCTj=150oC
4
6
8
10
12
14
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=30A
Tc=25
℃
AP0603GM
A
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4/4
Q
VG
4.5V
QGS QGD
QG
Charge
100
1000
10000
1 6 11 16 21 26 31
VDS ,Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
4
8
12
16
0 20406080
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
VDS =20V
VDS =24V
ID=30A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
ingle Pulse
1ms
10ms
100ms
DC
0
30
60
90
120
02468
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
