4-1
4
GENERAL PURPOSE
AMPLIFIERS
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
13
2
4
RF OUTRF OUTRF IN
GND
GND
MARKING - C3
RF2043
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
The RF2043 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X-CF
ceramic package offers significantly lower thermal resis-
tance than similar size plastic packages.
• DC to >6000MHz Operation
• Internally matched Input and Output
• 11dB Small Signal Gain
• +35dBm Output IP3
• +18.5dBm Output Power
• Extremely Flat Gain Response
RF2043 General Purpose Amplifier
RF204X PCBA Fully Assembled Evaluation Board
Rev A3 990527
.215
.185
.045
.035
.007
.003
.017
.013
1
.115
.085 TYP METALLIZATION
.025
.015
.038
.032
.010
.006
.026
.022
.073
.067
.057 MAX
MARKING
45°
! "
4-2
RF2043
Rev A3 990527
4
GENERAL PURPOSE
AMPLIFIERS
Absolute Maximum Ratings
Parameter Rating Unit
Supply Current 120 mA
Input RF Power +20 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -60 to +150 °C
Parameter Specification Unit Condition
Min. Typ. Max.
Overall T=25 °C, VD=5.5V, ICC=70mA
Frequency Range DC to >6000 MHz
1dB Bandwidth 5.5 GHz
Gain 11.3 dB Freq=100MHz
11.3 dB Freq=1000MHz
10.2 11.4 dB Freq=2000MHz
11.5 dB Freq=3000MHz
11.5 Freq=4000MHz
9.9 Freq=6000MHz
Gain Flatness ±0.05 dB 100MHz to 2000MHz
Noise Figure 7.6 dB Freq=1000MHz
Input VSWR <1.8:1 In a 50Ω system, DC to 3000MHz
<2.5:1 In a 50Ω system, 3000MHz to 6000MHz
Output VSWR <1.8:1 In a 50Ω system, DC to 3000MHz
<2.6:1 In a 50Ω system, 3000MHz to 6000MHz
Output IP3+34.5 dBm Freq=1000MHz
Output P1dB +18.5 dBm Freq=1000MHz
Reverse Isolation 16.5 dB Freq=1000MHz
Thermal ICC=70mA, PDISS=370mW
ThetaJC 149 °C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
142 °C TAMB=+85°C
Mean Time Between Failures 1.4x103years TAMB=+85°C
3.4x105years TAMB=+25°C
1.8x109years TAMB=-40°C
Power Supply With 22Ω bias resistor
Device Operating Voltage 5.0 5.5 6.0 V At pin 3 with ICC =70mA
Operating Current 70 mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-3
RF2043
Rev A3 990527
4
GENERAL PURPOSE
AMPLIFIERS
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
3RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned oper-
ating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 5.5 V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
4GND
Same as pin 2.
(
)
–
=
RF OUT
RF IN
RF OUT
22 pF
R
BIAS
10 nF 22 pF
47 nH
22 pF
RF IN
V
CC
13
2
4
4-5
RF2043
Rev A3 990527
4
GENERAL PURPOSE
AMPLIFIERS
Gain versus Frequency Across Temperature
ICC = 70 mA
8.00
9.00
10.00
11.00
12.00
13.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
Gain (dB)
-40 C
26 C
85 C
Output P1dB versus Frequency Across Temperature
ICC = 70 mA
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
Output Power (dBm)
- 40 C
26 C
85 C
Output IP3 versus Frequency Across Temperature
ICC = 70 mA
20.00
22.00
24.00
26.00
28.00
30.00
32.00
34.00
36.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
3rd Order Intercept Power (dBm)
-40 C
26 C
85 C
Noise Figure versus Frequency Across Temperature
ICC = 70 mA
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
Noise Figure (dB)
-40 C
26 C
85 C
Input VSWR versus Frequency Across Temperature
ICC = 70 mA
1.00
1.50
2.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
VSWR
-40 C
26 C
85 C
Output VSWR versus Frequency Across Temperature
ICC = 70 mA
1.00
1.50
2.00
2.50
3.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency (GHz)
VSWR
-40 C
26 C
85 C
