Semiconductor Group 1 Mar-01-1996
BAT 14-03W
Silicon Schottky Diode
• DBS mixer application to 12GHz
• Medium barrier type
• Low capacitance
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAT 14-03WO/white Q62702-A1103 1 = A 2 = C SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 4 V
Forward current
I
F 90 mA
Operating temperature range
T
op - 55 ... + 125°C
Storage temperature
T
stg - 55 ... + 150
Total power dissipation
T
S ≤ 85°C
P
tot 100 mW
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 450 K/W
Junction - soldering point
R
thJS ≤ 690
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Mar-01-1996
BAT 14-03W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR) = 5 µA
V
(BR) 4 - - V
Forward voltage
I
F = 1 mA
I
F = 10 mA
V
F
0.48
0.36 0.55
0.43 0.66
0.52
Diode capacitance
V
R = 0 ,
f
= 1 MHz
C
T- 0.22 0.35 pF
Differential forward resistance
I
F 10mA/ 50 mA
R
F- 5.5 - Ω
Diode capacitance
C
T
= f
(
V
R)
f
= 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
R
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
pF
0.50
C
T
Semiconductor Group 3 Mar-01-1996
BAT 14-03W
Forward current
I
F =
f
(
V
F)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0
V
F
-2
10
-1
10
0
10
1
10
2
10
mA
I
F
125°C
85°C
25°C
-40°C
Reverse current
I
R =
f
(
V
R)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
R
-3
10
-2
10
-1
10
0
10
1
10
mA
I
R
T
A=125°C
T
A=85°C
T
A=25°C
Semiconductor Group 4 Mar-01-1996
BAT 14-03W
Package
