LM759CH - National Semiconductor

TL/H/10075

LM759/LM77000 Power Operational Amplifiers

November 1994

LM759/LM77000

Power Operational Amplifiers

General Description

The LM759 and LM77000 are high performance operational

amplifiers that feature high output current capability. The

LM759 is capable of providing 325 mA and the LM77000

providing 250 mA. Both amplifiers feature small signal char-

acteristics that are better than the LM741. The amplifiers

are designed to operate from a single or dual power supply

with an input common mode range that includes the nega-

tive supply. The high gain and high output power provide

superior performance. Internal current limiting, thermal shut-

down, and safe area compensation are employed making

the LM759 and LM77000 essentially indestructible.

Features

YOutput current

LM759Ð325 mA minimum

LM77000Ð250 mA minimum

YInternal short circuit current limiting

YInternal thermal overload protection

YInternal output transistors safe-area protection

YInput common mode voltage range includes ground or

negative supply

Applications

YVoltage regulators

YAudio amplifiers

YServo amplifiers

YPower drivers

Connection Diagrams and Ordering Information

TL/H/10075–1

Lead 4 connected to case.

Top View

Order Number LM759MH, LM759CH or LM759H/883

See NS Package Number H08C

TL/H/10075–2

Top View

Order Number LM759CP or LM77000CP

See NS Package Number P04A

C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

Storage Temperature Range

Metal Can b65§Ctoa

175§C

Plastic Package b65§Ctoa

150§C

Operating Junction Temperature Range

Military (LM759M) b55§Ctoa

150§C

Commercial (LM759C, LM77000C) 0§Ctoa

125§C

Lead Temperature

Metal Can (soldering, 60 sec) 300§C

Plastic Package (soldering, 10 sec) 265§C

Internal Power Dissipation (Note 1) Internally Limited

Supply Voltage g18V

Differential Input Voltage 30V

Input Voltage (note 2) g15V

LM759

Electrical Characteristics TJe25§C, VCC eg15V, unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

VIO Input Offset Voltage RSs10 kX1.0 3.0 mV

IIO Input Offset Current 5.0 30 nA

IIB Input Bias Current 50 150 nA

ZIInput Impedance 0.25 1.5 MX

ICC Supply Current 12 18 mA

VIR Input Voltage Range Vab2V to VbVab2V to VbV

IOS Output Short Circuit Current

VCC–VO

e30V g200 mA

IO PEAK Peak Output Current 3.0V s

VCC–VO

s10V g325 g500 mA

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 50 200 V/mV

TR Transient Response Rise Time RLe50X,A

Ve1.0 300 ns

Overshoot 5.0 %

SR Slew Rate RLe50X,A

Ve1.0 0.6 V/ms

BW Bandwidth AVe1.0 1.0 MHz

The following specifications apply for b55§CsTJsa150§C

VIO Input Offset Voltage RSs10 kX4.5 mV

IIO Input Offset Current 60 nA

IIB Input Bias Current 300 nA

CMRR Common Mode Rejection Ratio RSs10 kX80 100 dB

PSRR Power Supply Rejection Ratio RSs10 kX80 100 dB

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 25 200 V/mV

VOP Output Voltage Swing RLe50Xg10 g12.5 V

LM759C

Electrical Characteristics TJe25§C, VCC eg15V, unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

VIO Input Offset Voltage RSs10 kX1.0 6.0 mV

IIO Input Offset Current 5.0 50 nA

IIB Input Bias Current 50 250 nA

ZIInput Impedance 0.25 1.5 MX

ICC Supply Current 12 18 mA

VIR Input Voltage Range Vab2V to VbVab2V to VbV

IOS Output Short Circuit Current

VCC–VO

e30V g200 mA

IO PEAK Peak Output Current 3.0V s

VCC–VO

s10V g325 g500 mA

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 25 200 V/mV

TR Transient Response Rise Time RLe50X,A

Ve1.0 300 ns

Overshoot 10 %

SR Slew Rate RLe50X,A

Ve1.0 0.5 V/ms

BW Bandwidth AVe1.0 1.0 MHz

The following specifications apply for 0§sTJsa125§C

VIO Input Offset Voltage RSs10 kX7.5 mV

IIO Input Offset Current 100 nA

IIB Input Bias Current 400 nA

CMRR Common Mode Rejection Ratio RSs10 kX70 100 dB

PSRR Power Supply Rejection Ratio RSs10 kX80 100 dB

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 25 200 V/mV

VOP Output Voltage Swing RLe50Xg10 g12.5 V

LM77000

Electrical Characteristics TJe25§C, VCC eg15V, unless otherwise specified

Symbol Parameter Conditions Min Typ Max Units

VIO Input Offset Voltage RSs10 kX1.0 8.0 mV

IIO Input Offset Current 5.0 50 nA

IIB Input Bias Current 50 250 nA

ZIInput Impedance 0.25 1.5 MX

ICC Supply Current 12 18 mA

VIR Input Voltage Range a13 to Vba13 to VbV

IOS Output Short Circuit Current

VCC–VO

e30V g200 mA

IO PEAK Peak Output Current 3.0V s

VCC–VO

s10V g250 g400 mA

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 25 200 V/mV

TR Transient Response Rise Time RLe50X,A

Ve1.0 300 ns

Overshoot 10 %

SR Slew Rate RLe50X,A

Ve1.0 0.5 V/ms

BW Bandwidth AVe1.0 1.0 MHz

The following specifications apply for 0§sTJsa125§C

VIO Input Offset Voltage RSs10 kX10 mV

IIO Input Offset Current 100 nA

IIB Input Bias Current 400 nA

CMR Common Mode Rejection RSs10 kX70 100 dB

PSRR Power Supply Rejection Ratio RSs10 kX80 100 dB

AVS Large Signal Voltage Gain RLt50X,V

Oeg

10V 25 200 V/mV

VOP Output Voltage Swing RLe50Xg10 g12.5 V

Note 1: Although the internal power dissipation is limited, the junction temperature must be kept below the maximum specified temperature in order to meet data

sheet specifications. To calculate the maximum junction temperature or heat sink required, use the thermal resistance values which follow the Equivalent Circuit

Schematic.

Note 2: For a supply voltage less than 30V between Vaand Vb, the absolute maximum input voltage is equal to the supply voltage.

Note 3: For military electrical specifications RETS759X are available for LM759H.

Equivalent Circuit

TL/H/10075–3

Note: All resistor values in ohms.

Typ Max Typ Max

Package iJC iJC iJA iJA

§C/W §C/W §C/W §C/W

Plastic Package (P) 8.0 12 75 80

Metal Can (H) 30 40 120 150

PD Max eTJ Max bTA

iJC aiCA

eTJ Max bTA

iJA

(without a heat sink)

iCA eiCS aiSA

Solving TJ:

TJeTAaPD(iJC aiCA)or

AaP

JA (without a heat sink)

Where:

TJeJunction Temperature

TAeAmbient Temperature

PDePower Dissipation

iJA eJunction to ambient thermal resistance

iJC eJunction to case thermal resistance

iCA eCase to ambient thermal resistance

iCS eCase to heat sink thermal resistance

iSA eHeat sink to ambient thermal resistance

Mounting Hints

Metal Can Package (LM759CH/LM759MH)

The LM759 in the 8-Lead TO-99 metal can package must

be used with a heat sink. With g15V power supplies, the

LM759 can dissipate up to 540 mW in its quiescent (no

load) state. This would result in a 100§C rise in chip temper-

ature to 125§C (assuming a 25§C ambient temperature). In

order to avoid this problem, it is advisable to use either a slip

on or stud mount heat sink with this package. If a stud

mount heat sink is used, it may be necessary to use insulat-

ing washers between the stud and the chassis because the

case of the LM759 is internally connected to the negative

power supply terminal.

Plastic Package (LM759CP/LM77000CP)

The LM759CP and LM77000CP are designed to be at-

tached by the tab to a heat sink. This heat sink can be either

one of the many heat sinks which are commercially avail-

able, a piece of metal such as the equipment chassis, or a

suitable amount of copper foil as on a double sided PC

board. The important thing to remember is that the negative

power supply connection to the op amp must be made

through the tab. Furthermore, adequate heat sinking must

be provided to keep the chip temperature below 125§C un-

der worst case load and ambient temperature conditions.

Typical Performance Characteristics

Various Closed Loop Gains

Frequency Response for

Frequency Response

Open Loop vs

vs Frequency

Output Voltage

Load Resistance

Output Voltage vs

Signal Pulse Response

Voltage Follower Large

Transient Response

Voltage Follower

vs Frequency

Total Harmonic Distortion

vs Power Output

Total Harmonic Distortion

vs Frequency

Input Noise Voltage

vs Frequency

Noise Current

vs Junction Temperature

Short Circuit Current

vs Output Voltage

Peak Output Current

TL/H/10075–4

Applications

Offset Null Circuit

TL/H/10075–5

Audio Applications

Paralleling LM759 Power Op Amps

TL/H/10075–6

Low Cost Phono Amplifier

TL/H/10075–7

Speaker Output Min VOP–P

Impedance Power Supply (Volts)

(Ohms) (Watts) (Volts)

4 0.18 9 2.4

8 0.36 12 4.8

16 0.72 15 9.6

32 1.44 25 19.2

Applications (Continued)

Bi-Directional Intercom System Using the LM759 Power Op Amp

TL/H/10075–9

Features:

Circuit Simplicity

1 Watt of Audio Output

Duplex operation with only one two-wire cable as interconnect.

Note 1: All resistor values in ohms.

Applications (Continued)

High Slew Rate Power Op Amp/Audio Amp

TL/H/10075–10

Features:

High Slew Rate 9 V/ms

High 3 dB Power Bandwidth 85 kHz

18 Watts Output Power into an 8Xload.

Low DistortionÐ0.2%, 10 Vrms, 1 kHz into 8X

Design Consideration

AVt10

Servo Applications

AG Servo AmplifierÐBridge Type

TL/H/10075–11

Features:

Gain of 10

Use of LM759 Means Simple Inexpensive Circuit

Design Considerations:

325 mA Max Output Current

DC Servo Amplifier

TL/H/10075–12

Features:

Circuit Simplicity

One Chip Means Excellent Reliability

Design Considerations

IOs325 mA

Note 1: All resistor values in ohms.

Regulator Applications

Adjustable Dual Tracking Regulator

TL/H/10075–13

Features:

Wide Output Voltage Range (g2.2V to g30V)

Excellent Load Regulation DVOkg5mVforDI

Oeg

0.2 A

Excellent Line Regulation DVOkg2mVforDV

Ie10V

Note 1: All resistor values in ohms.

10 Amp Ð 12 Volt Regulator

Features:

Excellent Load and Line Regulation TL/H/10075–14

Excellent Temperature Coefficient-Depends

Largely on Tempco of the Reference Zener

Note 1: All resistor values in ohms.

Physical Dimensions inches (millimeters)

8-Lead Metal Package

Order Number LM759MH, LM759CH or LM759H/883

NS Package Number H08C

LM759/LM77000 Power Operational Amplifiers

Physical Dimensions inches (millimeters) (Continued)

Order Number LM759CP or LM77000CP

NS Package Number P04A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component is any component of a life

systems which, (a) are intended for surgical implant support device or system whose failure to perform can

into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life

failure to perform, when properly used in accordance support device or system, or to affect its safety or

with instructions for use provided in the labeling, can effectiveness.

be reasonably expected to result in a significant injury

to the user.

National Semiconductor National Semiconductor National Semiconductor National Semiconductor

Corporation Europe Hong Kong Ltd. Japan Ltd.

1111 West Bardin Road Fax: (

49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309

Arlington, TX 76017 Email: cnjwge

tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408

Tel: 1(800) 272-9959 Deutsch Tel: (

49) 0-180-530 85 85 Tsimshatsui, Kowloon

Fax: 1(800) 737-7018 English Tel: (

49) 0-180-532 78 32 Hong Kong

Fran3ais Tel: (

49) 0-180-532 93 58 Tel: (852) 2737-1600

Italiano Tel: (

49) 0-180-534 16 80 Fax: (852) 2736-9960

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.