QT8004R-FREQ - Q-TECH Corporation

GEN E RAL RELEAS E DOCU MENT

CONSULT FACTORY FO R CU RRENT RE V ISION

REVISIONS

REVISION DESCRIPTION APPROVED DATE

- Initial release Luis Vargas 5/28/2008

SPECIFIC ATION CON TRO L DRAWING Q-TECH CORPORATION

10150 W. JEFFERSON BLVD.

CULVER CITY, CA 90232-3510

PREPA RED BY:

Lui s Va rg a s

DATE

6/5/08

LOW PROFILE 24 PIN DDIP HYBRID CRYSTAL

OSCILLATOR, TCXO, CLASS S,

Standard Design For Sine Wave up to 150MHz

UNLESS OTHERWISE

SPECI FIED, DIM ENS IONS

ARE IN INCHES.

TOLERANCES:

3 PLA CE DE CI MAL = .00 5

2 PLA CE DE CI MAL = .02

1 PLA CE DE CI MAL = .1

FRACTIONS = ± 1/16

ANGLES = 2 DEGREES

CHEC KED BY:

QUALI T Y

DATE

DRA W I NG NO.:

QT800 DDIP Sine-Wave

REVISION

RE LEASE D BY :

DOCUMENT CONTROL

APPROVED BY :

ENGINEERING

DATE

SCALE

NONE

SIZE

CAGE

CODE

51774 SHEET 1 OF 7

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

-50-45-40-35-30-25-20-15-10-5 0 5 1015202530354045505560657075808590

temp, deg C

freq error, PPM

Example 1 of Temperature Stability

Example 2 of Temperature Stability

50MHz TCXO ,Vcc=12v,+25ºC

9/17/08

-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

-70

-60

-50

-40

-30

1 10 100 1000 10000 100000

Frequency Offset, HZ

L(f), dB

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 2 of 7 -

1.0 SCOPE

This specification establishes the detail requirements for low profile hybrid , hermetically sealed, Sine-

Wave out pu t te mpe ra t ure c om pen sa te d c rystal os cil lat or s (TC XO) for use in spac e fl ig ht mi ss i ons.

2.0 APPLICABLE DOCUMENTS

The following documents of the latest issue form a part of this drawing to the extent specified herein.

2.1 Specifications and Standards

SPECIFICATIONS

MILITARY

MIL-S-19500 Semiconductor Devices, General Specification For

MIL-P RF-5 5310 Crystal Oscillat ors, Ge ner al Specification For

MIL-PRF-38535 In tegrate d Circuits, (Microcircuits) M anufacturing, General S pec ific ation For

MIL -P R F- 3 85 34 Hyb rid Mic r oc ir cu it s , Gen er al Sp e cif ic at i on F or

STANDARDS

MILITARY

MIL-STD-20 2 Test Methods for Electron ic and E lectrical Component P a rts

MIL-STD-88 3 Test Methods and Procedures for Microelectronics

MIL-STD- 1686 Electrosta tic Discharg e Con trol Program for Protection of Electrical and

Electronics Par ts, Assemblies and Equipment.

2.2 Conflicting requirements

In the event of conflict between requirements of this specification and other requirements of the

applicable detail drawing, the precedence in which requirements shall govern, in descending order, is

as follows:

a) Applicable Customer purchase order.

b) Applicable detail drawing.

c) This specification.

d) Other specifications or standards referenced in 2.1 herein.

2.3 Customer Purchase Order Special Requirements

Additional special requirements shall be specified in the applicable Customer purchase order when

additional requirements or modifications specified herein are needed for compliance to special

program or product line requirements.

3.0 PERFOR MAN CE REQUIRE MENT S

3.1 General Definition

The TCXO is a high reliability signal generat or that provides a sine-wa ve output. The TCXO has been

designed to operate in a spaceflight environment with an expected lifetime in excess of 15 years.

Lifetime is defined as the sum of operational and storage environments.

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 3 of 7 -

3.1.1 Electrical Characteristics

PARAMETER SYMBOL CONDITIONS VALUE UNIT

Frequenc y Nom. fo -

See part nu m ber

generation table

MHz

Sup p l y volt a ge , No m . Vs Vs±5%

See part nu m ber

generation table

Inp ut Current, max. Is Vs, nom. / Ta=+25°C 30 50 mA

Fre q. st a bi lit y vs .

temperature

(including ±5% Load

Change and ±5% Input

Voltage change)

f/fc (Ta)

Ta=-20°C…+70°C ( option 1)

Ta=-40°C…+85°C ( option 2)

Contact factory for other options

available

±1.0

±2.0

See part nu m ber

generation table

ppm

Electrical Frequency

Adjustment Min.

(when specified)

f/fo

(Vcc) ±5 PPM Tw o options:

1) via an external select-at-test

resist or connected from Pin 1

to Ground

2) Via Externa l tuning voltage

±5.0

See part nu m ber

generation table

ppm

Aging Max f/f o over 1 0 yea r (first year  1 ppm) ±5.0 ppm

Fre q. st a bi lit y vs . Va cu u m

f/fo Met by design, not tested ±0.2 ppm

Short term stability f/fc(t)

t=1sec. (Allan variance) 0.001 ppm

RF Output

Contact factory for other options

available

30 to

3rd

75.1 to

150

3rd X

MHz

Output level Min. Sine Class S, 100 krads (Si) total

dose Min

See part nu m ber

generation table

dBm

Harmoni cs Max. -20 -20 dBc

Sub-harmonics Max. N/A -20 dBc

Phase noise @ freq. offset

£ (f)

f=10Hz

f=100Hz

f=1kHz

f=10kHz

f=100kHz

-80

-110

-135

-145

Contact

factory

for

options

available

dBc/Hz

Spurious Under static co nditions. Met by

design, not tested. -70 dBc

3.2 Abso lu te Max im u m Rat in g

Sup p ly Vo lt a ge 0 to +1 6 . 5 VDC

DC Input Curr ent 50 mA maxi mum

Storage Temperature range -62°C to + 1 25°C

Lead Temperature (Solder ing, 10 seconds) 300°C

3.2.1 Physical Characteristics

3.2.1.1 Dimensions - The TCXO outline dimensions and terminal connections shall be as shown in Figure 1

herein.

3.2.1.2 Weight - The TCXO shall weigh less than or equal to 25 grams.

3.2.1.3 Materials - The TCXO package body and lead finish shall be gold in accordance with MIL-PRF-38534.

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 4 of 7 -

3.2.2 Environmental Conditions

Sine Vibration MIL-STD-202, Method 204, TC “D”

Rando m Vibratio n MIL-S TD-202, Method 214 TC “I-K” (15 minutes per axis)

Shock MIL-STD-202, Method 213, TC “F”

Acceleration MIL-STD-883, Method 2001, TC “A”

Altitude 50,000 feet min imum to deep space

Radiation Radiation te sting is not performed, but the se TCX Os have been acceptable for

use in environments up to 100K rads by analysis of the components used. Only

bipolar semiconductors are employed. A copy of the parts list and materials

can be provided for review.

The electronics used in the TCXO shall be sing le event latchup free.

Electrostatic Discharge Sensitivity

The TCXO supplied to this drawing shall be cons idered to be electrostatic

discharge sensitive and require further protection and shall use one of the

packaging requirements in accordance with MIL-PRF-38534, Category A,

Section 5.3.2.4 Transportability.

The TCXO shall be capable of being transported by air, ship or r oad when

packaged in a suitable container.

3.3 Design and Construction

The design and construction of the crystal oscillator shall be as specified herein. As a minimum, the

oscillators shall meet the design and construction requirements of MIL-PRF-55310, except element

evaluation shall be as specified in 3.3.1.

Operation

Design, Construction &

Component Screen (see 3.3.2) MIL-PRF-55310 Clas s S

Workmanship M883, Method 2017 for Class S

Screening MIL-PRF-55310 Class S

Non-Destruct Wire Bond Pull 100%, M883, Method 2023 (2.4 grams)

Internal Visual MIL-STD-883, methods 2017 & 2032 condition K (class S). During the time

interva l between final internal visual inspection and preparation for sealing,

hybr id cryst al oscil lator s sha ll be stored in a dry, contr olle d env iron men t as

defined in MIL-STD-883, method 2017 or in a vacuum bake oven.

Stabilization Bake 48 hrs minimum @ +150 C M883, Method 1008 TC B

Thermal Shock M883, Method 1011, TC A

Temperature Cycling M883, Method 1010, TC B

Constant Acceleration M883, Method 2001, TC A (5000 gs, Y1 Axis only)

Se al Test (fin e & gro ss) 100% Met hod 101 4, (TC A 1 for fine leak and TC C for gross leak)

PIND M8 83, Method 2020, TC B

Electrical Te st Frequenc y, Output le vel s, Input Current@ +25 C

Burn-In (Powered with load) +125 C for 240 hours

Electrical Test

Frequenc y, Output le vel s, Input Current

@ +25°C & Temp Extremes listed on the Electrical Specification

Radiographic M883, Method 2012 class S

Group A 100%

Group B (30 day Aging @ +70 C) 100%

External visual 883 Method 2009

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 5 of 7 -

3.3.1 All piece pa rts shall be deri ved from lots that meet the eleme nt evaluation requirements of MIL-PR F-

38534, Class K, with the exception of the following exceptions:

Active elements

a) Visual inspection of silicon on sapphire microcircuits. Semicircular crack(s) or multiple adjacent

cracks, not in the active area, starting and terminating at the edge of the die are acceptable.

Attached (chip in place) sapphire is nonconductive material and shall not be considered as foreign

material and will be considered as nonconductive material for all inspection criteria.

b) S ubgrou p 4, Sc anning Ele ctron Mi crosco pe (SEM ) ins p ection . T h e m an u f a ct u r e r m ay all o w t h e di e

di stri bu tor , at h is op tio n, to s ele ct two ( 2) dic e from a w affl e pack ( con ta inin g a max imu m q uanti ty

of 100 die), visually inspect for the worst case metallization of the 2 dice, and take SEM pho tog raphs

of the worst case.

c) Subgroup 5 radiation tests. Subgroup 5 radiation tests are not required unless otherwise specified

in the det ail p urc ha se or de r.

3.3.2 Processes - Processes used for manufacturing the TCXO are selected on the basis of their ability to

meet the quality requirements for space High Reliability manu facturing. Travelers or Process Cards are

used in the manufacturing and testing of all of the TCXO Series, and might be available for customer

review. Copies of these Travelers can be provided with the TCXOs at time of shipment if so specified

on the purchase order.

3.3.3 Interchangeability - Eac h T CX O shall be int ercha n ge ab le wi th o ut us ing a specia l sele cti on pr ocess.

3.3.4 Product Marking - Each unit shall be permanently marked with the manufacturer's name or symbol,

part numb er, l ot date c ode nu mber, a nd ser ial num ber. The unit sha ll be mar ked with the out line o f an

equilateral triangle near pin 1 to show that it contains devices which are sensitive to electrostatic

discharge.

3.4 Parts Program

Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP)

Program developed, implemented and certified for advanced applications and extended environments.

3.4.1 Quartz Crystal Resonator - The c rys ta l re so nat o r u sed shall be c o ns tr ucte d usi ng a 4 p oint mou nt

premium s ynthetic swep t Q uartz and procured t o Q-TEC H SCD. (F or the Enginee ring m odels, non-

swept quartz may be used).

3.5 Traceability Requirements

Material, element and pro cess traceability requirements shall be as specified by MIL-PRF-38534 for

Cla ss K hyb rid s.

3.6 Data

3.6.1. Design Documentation - When required by the purchase order, design, topography, process and flow

charts for all assembly/inspection and test operation for devices to be supplied under this specification

on the initial procurement shall be established and shall be available in-plant for review by the procuring

activity upon request. This design documentation shall be sufficient to depict the physical and electrical

construction of t he devices supplied under the specification and shall be traceable to the specific parts,

drawings or part type numbers to which it applies, and to the production lot(s) and inspection lot codes

under which devices are manufactured and tested so that revisions can be identified.

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 6 of 7 -

3.6.2. Technical Data Package - When required by the purchase order, the following design documentation

and information is deliverable 30 days prior to the start of production. The Technical Dat a Package sh all

consist of the following:

a) Assembly drawing(s).

b) All electrical schematics and drawings

not considered proprietary

c) The assembly and screening travelers to be used on-line to manufacture the devices supplied to this

specification.

d) Pa rt s and m ate rials li st.

3.7 Test Report

A test report is supplied with each shipment of oscillators and includes the following inform ation, as a

minimum:

a) A Certificate of Conformance to all specifications and purchase order requirements. As a minimum,

the Certificate of Conformance shall inc lude the following information:

Purchase order number.

Applicable part number.

Manu fac tu rer s lo t nu mbe r.

Lot date c ode.

b) Parts and materials traceability information.

c) Certificate of crystal sweeping.

d) Ma nu fac tu ring l ot tra ve ler.

e) Screening attributes and variables data a s applica ble.

f) Quality conformance inspection attributes and variables data as applicable.

g) Radiographic inspection negatives.

3.8 E ngin ee r i n g Mod e l s

Engineering Models are fit, form, and function representative of Flight Models and of commercial

construction using commercial parts of same generic type as Flight Models. Completed oscillators are

not scre e ned .

NOTES:

Th is o sc i lla t or is off ered to m e et th e sp ec ifica ti o ns ab ov e a nd is not g ua rant e ed to m e et a ny ot h er

requirements

QT800 DDIP Sine -Wa ve REV.

Q-TECH Corporation

10150 W. Jefferson Bl vd.

Culver Cit y, CA 90232

SIZE

CAGE NO.

51774 Sheet 7 of 7 -

Q-TECH

PART NUMBER

FREQUENCY

.300 MAX.

24X .200 MIN.

24X Ø .018 ± .002

1.100

1.280 MAX.

.600

.790 MAX.

22X .100

NON-ACCUMULATIVE

ESD SYMBOL

FOR PIN No. 1

USA

D/C S/N

112

24 13

 PART NUMBER GENERATION

Series Out put type and suppl y

voltage Temperature

Range (

Stability

Over

Temperature

Frequenc y

Range

(MHz) External Tuning

QT80: 24 Pin Double Di p

(available from 10 to 150

MHz)

4: SIN E WAVE +3dBm …..5V

5: SIN E WAVE +7dBm ….12V

6: SIN E WAVE 7dBm …..15V

N: 0…+50… ……..

R: 0… + 70… ……..

Q: 0…+70………..

R: 0… + 70… ……..

U: -20…+ 70.… ….

V: -20…+70……..

W: -20…+70…….

X: -40…+85……..

Y: -40…+85……..

Z: -40…+85……..

(See note 1 below)

±1 ppm

±2 ppm

±5 ppm

±1 ppm

±2 ppm

±5 ppm

±4 ppm

±5 ppm

±10 ppm

10…150

Blank: No tuning

R: External resistor

V: External voltage

1. Variations from standard specification are available, please contact factory.

EXAMPLE: QT805U-100.000000-R

EXAMPLE: The QT704S-100.000000-R would be a HF TCXO, 24 pin thru-hole pack, sine-wave 12 volts, stabilit y ±1 ppm

over -20…+70°C, @ 100 MHz with external tuning via external resistor.

FIGURE 1 INTERF ACE CONTRO L DRAWING

24 Pin Do ub l e Dip

PIN NO. DESIGNATION

1 External Frequency Adjustment

(wh en s pecifi ed )

2 - 11 NC

12 Ground/Case

13 RF Output

14 - 23 NC

24 Supply Voltage

NOTES:

• Dimensions are in inches.

• Lead numbers are for reference only and

are not ma rke d o n the u nit.

• A tr iang le symbol is mark ed o n the

corner o f th e pa c ka ge to indicat e Pin 1 .

• All pins with NC function may not be

connecte d as e xt ernal tie o r connections

(p ins m ay b e c o nnect ed internally) .