FLK057WG X, Ku Band Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 3.75 W Total Power Dissipation Tc = 25C PT Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 200 300 mA Transconductance gm VDS = 5V, IDS =125mA - 100 - mS Pinch-off Voltage Vp VDS = 5V, IDS =10mA -1.0 -2.0 -3.5 V -5 - - V 26.0 27.0 - dBm 6.0 7.0 - dB - 32 - % - 27 - dBm - 8 - dB - 34 - % - 20 40 C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency add Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Power-added Efficiency add Thermal Resistance Rth IGS = -10A VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12 GHz Channel to Case CASE STYLE: WG Edition 1.2 August 1999 G.C.P.: Gain Compression Point 1 FLK057WG X, Ku Band Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE POWER DERATING CURVE VGS =0V 200 Drain Current (mA) 3 2 1 -0.5V 150 -1.0V 100 -1.5V 50 -2.0V 50 100 150 0 200 f = 14.5GHz IDS 0.6 IDSS VDS=10V VDS=8.5V 8 10 f = 14.5 GHz IDS 0.6 IDSS add 19 40 20 add (%) Pout P1dB (dBm) 28 23 21 6 P1dB & add vs. VDS OUTPUT POWER vs. INPUT POWER 25 4 Drain-Source Voltage (V) Case Temperature (C) 27 2 27 P1dB 26 25 24 30 23 10 20 8 10 12 14 16 18 20 40 add 9 10 Drain-Source Voltage (V) Input Power (dBm) 2 add (%) 0 Output Power (dBm) Total Power Dissipation (W) 4 FLK057WG X, Ku Band Power GaAs FET S11 S22 +j50 +j10 16GHz 15 9 14 8 SCALE FOR |S12| +j100 +j25 11 10 12 13 S21 S12 +90 +j250 13 .08 .06 .04 .02 16GHz 0 12 10 25 50 11 16GHz 10 100 180 250 .04 15 9 14 13 12 15 -j100 11 11 12 16GHz -j25 0 1.6 9 10 10 -j250 8 1.2 8 8 15 9 -j10 .08 SCALE FOR |S21| 14 13 14 -j50 -90 S11 S-PARAMETERS VDS = 10V, IDS = 120mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG 500 .973 -47.8 7.249 147.9 .016 1000 .941 -85.1 5.946 121.8 8000 .816 148.5 1.199 9000 .787 139.7 10000 .740 11000 S22 MAG ANG 60.6 .545 -20.3 .026 38.1 .519 -38.1 -21.6 .033 -41.3 .745 -149.2 1.125 -35.4 .037 -40.9 .773 -157.3 129.3 1.149 -49.4 .045 -40.5 .796 -163.0 .642 112.7 1.251 -67.7 .058 -46.2 .819 -170.6 12000 .474 86.4 1.346 -91.6 .075 -58.5 .845 178.7 13000 .249 43.8 1.351 -119.6 .089 -75.4 .868 166.3 14000 .189 -83.7 1.227 -150.6 .095 -95.0 .878 155.2 15000 .480 -140.8 .980 -179.3 .093 -112.5 .868 148.7 16000 .689 -163.9 .752 158.6 .092 -125.9 .840 141.4 Download S-Parameters, click here 3 FLK057WG X, Ku Band Power GaAs FET 2-O1.60.01 (0.063) 1.0 Min. (0.039) Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 0.10.05 (0.004) 2 2.50.15 (0.098) 1 3 0.03 8.50.2 (0.335) 0.6 0.80.1 (0.031) 1.0 Min. (0.039) 0.5 (0.020) 6.10.1 (0.240) 2.5 Max. (0.098) 1. 2. 3. 4. Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4