IXFH18N60P - IXYS - Datasheet.Live

G = Gate D = Drain

S = Source TAB = Drain

DS99390E(03/06)

PolarHVTM HiPerFET

Power MOSFET IXFH 18N60P

IXFV 18N60P

IXFV 18N60PS

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

lInternational standard packages

lUnclamped Inductive Switching (UIS)

rated

lLow package inductance

- easy to drive and to protect

Advantages

lEasy to mount

lSpace savings

lHigh power density

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 μA 600 V

VGS(th) VDS = VGS, ID = 2.5 mA 3.0 5.5 V

IGSS VGS = ±30 V, VDS = 0 V ±100 nA

IDSS VDS = VDSS 25 μA

VGS = 0 V TJ = 125°C 250 μA

RDS(on) VGS = 10 V, ID = 0.5 ID25 400 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 600 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V

VGS Continuous ±30 V

VGSM Tranisent ±40 V

ID25 TC= 25°C18A

IDM TC= 25°C, pulse width limited by TJM 45 A

IAR TC= 25°C18A

EAR TC= 25°C30mJ

EAS TC= 25°C 1.0 J

dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns

TJ≤ 150°C, RG = 5 Ω

PDTC= 25°C 360 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 s 260 °C

MdMounting torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6 g

PLUS220 & PLUS220SMD 4 g

GS

D

PLUS220 (IXFV)

GS

PLUS220SMD (IXFV...S)

D (TAB)

TO-247 AD (IXFH)

VDSS = 600 V

ID25 =18 A

RDS(on) ≤≤

≤≤

≤400 mΩΩ

ΩΩ

Ω

trr ≤≤

≤≤

≤200 ns

D (TAB)

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 18N60P

IXFV 18N60P IXFV 18N60PS

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified)

Min. Typ. Max.

gfs VDS = 20 V; ID = 0.5 ID25, Note 1 9 16 S

Ciss 2500 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 280 pF

Crss 23 pF

td(on) 21 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns

td(off) RG= 5 Ω (External) 62 ns

tf22 ns

Qg(on) 50 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 nC

Qgd 18 nC

RthJC 0.35 °C/W

RthCS (TO-247, PLUS220) 0.21 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0 V 18 A

ISM Repetitive 54 A

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr IS = 18 A, -di/dt = 100 A/μs 200 ns

QRM VR = 100 V, VGS = 0 V 0.8 μC

FRM 5A

Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

PLUS220SMD (IXFV_S) Outline

PLUS220 (IXFV) Outline

TO-247 (IXFH) Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

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IXFH 18N60P

IXFV 18N60P IXFV 18N60PS

Fig. 1. Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

18

012345678

VDS - V olts

ID - Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

0 3 6 9 12 15 18 21 24 27 30

VDS - Volts

ID - Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

2

4

6

8

10

12

14

16

18

024681012141618

VDS - V olts

ID - Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

No rm a liz e d to I

D

= 9A Value v s.

Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

TJ - Degrees C entigrade

RDS(on) - Normalized

V

GS

= 10V

I

D

= 18A

I

D

= 9A

Fig. 5. R

DS(on)

No rm a lize d to I

D

= 9A Valu e vs.

Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

3.2

0 5 10 15 20 25 30 35 40 45

ID - Amperes

RDS(on) - Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maxim um Drain Current v s.

Case Temperature

0

2

4

6

8

10

12

14

16

18

20

-50-25 0 25 50 75100125150

TC - Degrees Centigrade

ID - Amperes

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 18N60P

IXFV 18N60P IXFV 18N60PS

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

40

3.5 4 4.5 5 5.5 6 6.5 7

V

GS

- Volts

I

D

- Amperes

T

J

= 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

4

8

12

16

20

24

0 5 10 15 20 25 30 35 40

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40º C

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

10

20

30

40

50

60

70

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

V

SD

- Volts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45 50

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 300V

I

D

= 9A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - Pi coFarads

f

= 1 MHz Ciss

Crss

Coss

Fig. 12. Forwa rd-Bias Safe Operating Area

1

10

100

10 100 1000

V

DS

- Volts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

25µs

1ms

100µs

R

DS(on)

Limit s

10ms

DC

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IXFH 18N60P

IXFV 18N60P IXFV 18N60PS

Fig. 13. Maximum Transient Therm al Resistance

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

R

(th)JC

- ºC / W

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