TIC108 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage K 1 Max IGT of 1 mA A 2 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TIC108D TIC108M Repetitive peak off-state voltage (see Note 1) TIC108S VDRM 700 800 400 VRRM TIC108N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) 600 TIC108D TIC108S UNIT 400 TIC108N TIC108M Repetitive peak reverse voltage VALUE 600 700 V V 800 IT(RMS) 5 A IT(AV) 3.2 A A Surge on-state current (see Note 4) ITSM 20 Peak positive gate current (pulse width 300 s) IGM 0.2 A Peak gate power dissipation (pulse width 300 s) PGM 1.3 W Average gate power dissipation (see Note 5) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. . APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC108 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER IDRM IRRM IGT VGT IH Repetitive peak off-state current Repetitive peak reverse current Gate trigger current Gate trigger voltage Holding current TEST CONDITIONS MIN dv/dt NOTE On-state voltage Critical rate of rise of off-state voltage MAX UNIT VD = rated VDRM RGK = 1 k TC = 110C 400 A VR = rated VRRM IG = 0 TC = 110C 1 mA VAA = 12 V RL = 100 tp(g) 20 s 1 mA VAA = 12 V RL = 100 TC = - 40C tp(g) 20 s RGK = 1 k VAA = 12 V RL = 100 tp(g) 20 s RGK = 1 k VAA = 12 V RL = 100 tp(g) 20 s RGK = 1 k VAA = 12 V RGK = 1 k 0.2 0.4 TC = 110C TC = - 40C (see Note 6) VD = rated VD RGK = 1 k 1 3.5 15 2 10 1.3 1.7 V mA RGK = 1 k IT = 5 A 0.6 0.2 Initiating IT = 20 mA VAA = 12 V 0.5 1.2 Initiating IT = 20 mA VT TYP TC = 110C V 20 V/s 6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 3.5 C/W 62.5 C/W APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC108 SERIES SILICON CONTROLLED RECTIFIERS THERMAL INFORMATION AVERAGE ANODE ON-STATE CURRENT MAX ANODE POWER DISSIPATED vs ANODE ON-STATE CURRENT TI23AA 6 TJ = 110 C Continuous DC 5 4 = 180 3 2 0 180 Conduction 1 10 Angle 0 30 40 50 60 70 80 90 100 1 110 1 10 100 TC - Case Temperature - C IT - Anode Forward Current - A Figure 1. Figure 2. SURGE ON-STATE CURRENT vs CYCLES OF CURRENT DURATION TRANSIENT THERMAL RESISTANCE vs CYCLES OF CURRENT DURATION TI23AC 100 No Prior Device Conduction Gate Control Guaranteed 10 1 TI23AD 10 RJC(t) - Transient Thermal Resistance - C/W TC 80C ITM - Peak Half-Sine-Wave Current - A TI23AB 100 PA - Max Anode Power Dissipated - W IT(AV) - Maximum Average Anode Forward Current - A DERATING CURVE 1 0*1 1 10 100 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. Figure 4. APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 100 3 TIC108 SERIES SILICON CONTROLLED RECTIFIERS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE 10 GATE TRIGGER VOLTAGE vs CASE TEMPERATURE TC23AA VAA = 12 V VAA = 12 V RL = 100 RL = 100 VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA TC23AB 0.8 tp(g) 20 s 1 0.7 RGK = 1 k tp(g) 20 s 0.6 0.5 0.4 0*1 -60 -40 -20 0 20 40 60 80 100 0.3 -50 120 TC - Case Temperature - C -25 0 Figure 5. 50 75 100 125 Figure 6. HOLDING CURRENT vs CASE TEMPERATURE 10 PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT TC23AD TC23AE 2.6 TC = 25 C VAA = 12 V RGK = 1 k 2.4 VTM - Peak On-State Voltage - V IH - Holding Current - mA 25 TC - Case Temperature - C Initiating IT = 20 mA 1 2.2 tp = 300 s Duty Cycle 2 % 2.0 1.8 1.6 1.4 1.2 1.0 0.1 -50 -25 0 25 50 75 TC - Case Temperature - C Figure 7. 100 125 0.8 0*1 1 Figure 8. 4 10 ITM - Peak On-State Current - A APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.