TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
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APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●5 A Continuous On-State Current
●20 A Surge-Current
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●Max IGT of 1 mA
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC108D
TIC108M
TIC108S
TIC108N
VDRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC108D
TIC108M
TIC108S
TIC108N
VRRM
400
600
700
800
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2) IT(RMS) 5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3) IT(AV) 3.2 A
Surge on-state current (see Note 4) ITSM 20 A
Peak positive gate current (pulse width ≤ 300 µs) IGM 0.2 A
Peak gate power dissipation (pulse width ≤ 300 µs) PGM 1.3 W
Average gate power dissipation (see Note 5) PG(AV) 0.3 W
Operating case temperature range TC-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL230 °C
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
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2
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