70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.572-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Low-Noise Amp Applications
Ordering number:ENN572E
2SA1016, 1016K/2SC2362, 2362K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1016, 1016K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2003B
[2SA1016, 1016K/2SC2362, 2362K]
1 : Emitter
2 : Collecor
3 : Base
SANYO : NP
retemaraPlobmySsnoitidnoC2632CS2,6101AS2 ,K6101AS2 K2632CS2 tinU
egatloVesaB-ot-rotcelloCV
OBC 021)–(051)–(V
egatloVrettimE-ot-rotcelloCV
OEC 001)–(021)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C05)–(Am
)esluP(tnerruCrotcelloCI
PC 001)–(Am
noitapissiDrotcelloCP
C004Wm
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
˚C
˚C
* : The 2SA1016, K/2SC2362, K are classified by 1mA hFE as follows : Continued on next page.
knaRFGH
hEF 023ot061065ot082069ot084
5.0
4.0
0.5
0.6
2.0
14.0 5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=0.1)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=0.1)–(Aµ
niaGtnerruCCDh
EF VEC I,V6)–(= CAm1)–(=*061*069
tcudorPhtdiwdnaB-niaGf
TVEC I,V6)–(= CAm1)–(= )011( 031 zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(= )2.2( 8.1 Fp
No.572-2/4
2SA1016, 1016K/2SC2362, 2362K
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am01)–(= BAm1)–(=5.0)–(V
egatloVnwodkaerBesaB-ot-rotcelloC(VOBC)RB ICI,Aµ01)–(= E]2632C,6101A[0=021)–(V
ICI,Aµ01)–(= E]K2632C,K6101A[0=051)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞]2632C,6101A[001)–(V
ICR,Am1)–(= EB =∞]K2632C,K6101A[021)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=5)–(V
leveLesioNV
)eva(ON VCC I,V03= CR,Am1= gk65= ΩV, GzHk1/Bd77=53Vm
leveLkaePesioNV
)kaep(ON VCC I,V03= CR,Am1= gk65= Ω,GV zHk1/Bd77=002Vm
ITR02951
IC -- VCE
0 --10 --20 --30 --40 --50
0
--4
--2
--6
--8
--10
--12
--100
µ
A
--50
µ
A
ITR02953
IB -- VBE
0 --0.2 --0.4 --0.6 --0.8 --1.0
ITR02952
IC -- VCE
01020304050
0
4
2
6
8
10
12
IB -- VBE
0.6 0.8 1.00.20 0.4
40
100
20
0
80
60
ITR02954
IB=0
--350
µ
A
--150
µ
A
--200
µ
A
--250
µ
A
--300
µ
A
2SA1016, 1016K
100
µ
A
50
µ
A
IB=0
150
µ
A
200
µ
A
250
µ
A
2SC2362, 2362K
2SA1016, 1016K
VCE=--5V
0
--40
--20
--60
--80
--100
2SC2362, 2362K
VCE=5V
ITR02955 ITR02956
1.0 5325732 10
5
3
2
3
2
100
7
5
fT -- IC
37510
2352
1.0
5
5
3
2
3
2
100
7
fT -- IC
2SA1016, 1016K
VCE=--6V 2SC2362, 2362K
VCE=6V
Collector Current, IC–mA
Base Current, IB–µA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Base-to-Emitter Voltage, VBE –V
Base Current, IB–µA
Base-to-Emitter Voltage, VBE –V
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
No.572-3/4
2SA1016, 1016K/2SC2362, 2362K
ITR02959
Cob -- VCB
ITR02961
Contour of NF
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5
ITR02960
Cob -- VCB
1.0
PC -- Ta
75 125100 15025050
200
500
100
0
400
300
ITR02962
2SA1016, 1016K
f=10Hz
∆f=1Hz
VCE=--6V
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
--1.0 23 57
--10 23 5 2357
10 100
23 57
7
1.0
2
3
7
5
10
7
1.0
2
3
7
5
10
2SA1016, 1016K
f=1MHz 2SC2362, 2362K
f=1MHz
4
dB
2
dB
15
dB
6
dB
8
dB
12
dB
NF=
1
dB
4
dB
2
dB
15dB
6
dB
8
dB
12
dB
2SA1016, 1016K
2SC2362, 2362K
ITR02957 ITR02958
--0.1 235--1.0 235 --10 235--100 0.1 23 5 1.0 23 5 10 2235100
2
7
5
3
10
7
5
2
3
7
5
1000
100
2
3
10
7
5
2
3
7
5
1000
100
hFE -- IChFE -- IC
2SA1016, 1016K
VCE=--6V 2SC2362, 2362K
VCE=6V
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5
ITR02963 ITR02964
Contour of NF
35 10
235
1000
235
10000
235100
2
1.0
3
5
0.1
2
3
5
2
10
3
5
2
100
1.0
Contour of NF
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
4
dB
2
dB
15
dB
6
dB
8
dB
12
dB
2SA1016, 1016K
f=100Hz
∆f=1Hz
VCE=--6V
4
dB
2dB
1dB
1
dB
15dB
6
dB
8
dB
12
dB
2SC2362, 2362K
VCE=6V
f=10Hz
NF=
1
dB
4
dB
2
dB
14
dB
6
dB
8
dB
12
dB
4
dB
2
dB
14
dB
6
dB
8
dB
12dB
NF=
0.7
dB
DC Current Gain, hFE
Collector Current, IC–mA
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Output Capacitance, Cob – pFSignal Source Resistance, Rg – Ω
Collector Current, IC–mA
Signal Source Resistance, Rg – Ω
Collector Current, IC–µA
Signal Source Resistance, Rg – kΩ
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Dissipation, P
C
–mW
Ambient Temperature, Ta – ˚C
PS No.572-4/4
2SA1016, 1016K/2SC2362, 2362K
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.
ITR02967
Contour of NF
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
23 5 23 5
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
2SA1016, 1016K
f=10kHz
∆f=1Hz
VCE=--6V
NF=
0.5
dB
4
dB
2
dB
15
dB
6
dB
8
dB
12
dB
0.7
dB
1
dB
4
dB
2
dB
15
dB
6dB
8
dB
12
dB
0.7
dB
1
dB
--0.001 --0.01
23 5 --0.1
23 5 --1.0 --10
235 23 5 35 10
235
1000
235
10000
235100
2
1.0
3
5
0.1
2
3
5
2
10
3
5
2
100
1.0
ITR02965 ITR02966
Contour of NF Contour of NF
5
3
2
5
3
2
5
3
2
0.1k
1.0k
10k
100k
2SA1016, 1016K
f=1kHz
∆f=1Hz
VCE=--6V
4
dB
2
dB
15
dB
6
dB
8
dB
12
dB
0.7
dB
1
dB
4
dB
2
dB
15
dB
6
dB
8
dB
12
dB
0.7
dB
1
dB
2SC2362, 2362K
f=1kHz
VCE=6V
NF=
1
dB
NF=
1
dB
4
dB
2
dB
6
dB
8
dB
4
dB
2
dB
6
dB
8
dB
14dB
12
dB
Collector Current, IC–mA
Signal Source Resistance, Rg – Ω
Collector Current, IC–mA
Signal Source Resistance, Rg – Ω
Collector Current, IC–µA
Signal Source Resistance, Rg – kΩ
