CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
enhanced version of the CMDSH-3 silicon Schottky
diode in an SOD-323 surface mount package.
MARKING CODE: S1E
ENHANCED SPECIFICATIONS:
IO from 100mA MAX to 200mA MAX
BVR from 30V MIN to 40V MIN
VF from 1.0 V MAX to 0.8 V MAX
Enhanced specification.
♦♦ Additional Enhanced specification.
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V
Average Forward Current IO 200 mA
Peak Repetitive Forward Current IFRM 350 mA
Peak Forward Surge Current, tp=10ms IFSM 750 mA
Power Dissipation PD 250 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=25V 90 500 nA
IR V
R=25V, TA=100°C 25 100 μA
BVR I
R=100μA 40 50 V
VF I
F=2.0mA 0.29 0.33 V
VF I
F=15mA 0.37 0.42 V
VF I
F=100mA 0.51 0.80 V
VF I
F=200mA 0.65 1.0 V
CJ V
R=1.0V, f=1.0MHz 7.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns
SOD-323 CASE
R3 (11-February 2016)
www.centralsemi.com
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S1E
www.centralsemi.com
R3 (11-February 2016)
R3 (11-February 2016)
www.centralsemi.com
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (11-February 2016)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
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