OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A .1 10/08
Page 1 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
Features:
• T-1 (3 mm) package style
• Choice of narrow or wide irradiance pattern
• Choice of dome lens or flat lens
• Mechanically and spectrally matched to other OPTEK devices
• Higher power output than GaAs at equivalent drive currents
• 935 nm diode
Description:
Each device in the OP165 and OP166 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs)
that is molded in an IR transmissive clear or amber-tinted epoxy package with either a dome or flat lens. Devices
feature narrow and wide irradiance patterns and a variety of electrical characteristics. The small T-1 package style
makes these devices ideal for space-limited applications.
OP165 and OP166 devices are m echanically and spectrally matched to the OP505 and OP535 series devices.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
• Space-limited applications
• Applications requiring coupling
efficiency
• Battery-operated or voltage-limited
applications
RoHS
Ordering Information
Part
Number LED Peak
Wavelength Output Power (mW/
cm2) Min / Max IF (mA)
Typ / Max Total Beam
Angl e Lead
Length
OP165A
935 nm
1.95 / NA
20 / 50
18°
OP165B 1.40 / 2.20
OP165C 0.85 / 1.60
OP165D 0.28 / NA
OP165W 0.50 / NA 90°
OP166A 1.95 / NA
18°
OP166B 1.40 / 2.20
OP166C 0.85 / 1.60
OP166D 0.28 / NA
OP166W 0.50 / NA 90°
0.50"
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1 10/08
Page 2 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
OP165W
CONTAINS POLYSULFONE
To avoid stress cracking, we suggest using
ND Industries’ Vibra-Tite for thread-locking.
Vibra-Tite evaporates fast without causing structural
failure in OPTEK'S molded plastics.
OP165 (A, B, C, D)
OP166W OP166 (A, B, C, D)
1
2
Pin # LED
1 Cathode
2 Anode
INCHES
[MILLIMETERS]
DIMENSIONS ARE IN:
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A .1 10/08
Page 3 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT) Apertured Radiant Incidence
OP165A, OP166A
1.95
-
- mW/cm2 IF = 20 mA(2)
PO Radiant Power Output
OP165W, OP166W
0.50
-
- mW IF = 20 mA
VF Forward Voltage - - 1.60 V IF = 20 mA
IR Reverse Current - - 100 µA VR= 2 V
λP Wavelength at Peak Emission - 935 - nm IF = 10 mA
B Spectral Bandwidth between Half Power
Points
-
50
- nm IF = 10 mA
∆λP /∆T
Spectral Shift with Temperature
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
±0.30
-
-
nm/°C IF = Constant
θHP
Emission Angle at Half Power Points
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
18
90
-
-
Degree IF = 20 mA
tr Output Rise Time - 1000 - ns
tf Output Fall Time - 500 - ns
IF(PK)=100 mA, PW=10 µs, D.C.=10.0%
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage and Operating Temperature Range -40o C to +100o C
Reverse Voltage 2.0 V
Continuous Forward Current 50 mA
Peak Forward Current (1 µs pulse width, 300 pps) 3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C
Power Dissipation 100 mW(1)
Notes:
1. Derate linearly 1.33 mW/°C above 25°C
2. EE(APT) is a measurement of the average apertured rediant incidence
ipon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to
and centered on the mechanical axis of the lens, and 0.590” (14.99
mm) from the measurement surface. EE(APT) is not necessarily
uniform within the measured areas.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1 10/08
Page 4 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
OP165, OP166 (A, B, C, D, W)
Distance vs Output Power vs Forw ard Current
0
1
2
3
4
5
6
7
8
9
0.0 '' 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
Normalized at 0.6" and 50 mA
Forward Current
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 5 10 15 20 25 30 35 40 45
Forward Cu rren t (m A)
Typical Forward Voltage (V)
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Opt ic a l P o wer vs I
F
vs Temp
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 5 10 15 20 25 30 35 40 45 50
Forward Current I
F
(mA)
Normalized Optical Power
-65°C
-40°C
-20°C
+0°C
+20°C
+40°C
+60°C
+80°C
+100°C
+125°C
Norm a li z ed at 20 mA and 20
o
C
Relati ve R a diant Intensity vs Angular
Displacement
0.0
0.2
0.4
0.6
0.8
1.0
-80 -30 20 70
Angular Displacement (Degrees)
Relative Radiant Intensity
