SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
• World Wid e We b Site - http: //www.se nsitro n.c om • E-Mail Address - sales@sensitr on. com •
UF4001-UF4007
Data Sheet 2629, Rev. A UF4001 THRU UF4007
ULTRA FAST RE CTIFIER S
Reverse V oltage - 50 to 1000 Volts Forward Current -
1.0 Amper e
Case: JEDEC DO-41 m olded plastic body
Terminals: Plated axial leads, solder able per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.012 ounce, 0.33 grams
The plastic package carries Underwriters Laboratory
Flammability Classification 94V -0
Ultra fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds, 0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
VOLTS
VOLTS
VOLTS
SYMBOLS UNITS
Amps
Amps
Volts
VRRM
VRMS
VDC
I(AV)
IFSM
VF
1.0
30.0
Operating junction and storage temperature range
Maximum repetitive peak rev erse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Ma ximum averag e forward rectified current
0.375”(9.5mm ) lead length at TA=55 C
Pe ak forward surge current
8.3ms single half sine -wav e superim posed on
ra te d l oa d (J ED E C Met h od)
Maximum ins tantaneous forward voltage at 1.0A
Maximum DC re verse current TA=25 C
at rated DC blocking voltage TA=100 C IR5.0
50.0
RΦJA
CJ
TJ,TSTG
50.0
15.0
-65 to +150
pF
C
A
µ
Typical thermal resistance (NOTE 3)
C/W
Typical junction capacitance ( NOTE 2)
Maximum reverse recovery time (NOTE 1) trr 50 75 ns
UF
4001 1000
700
1000
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1.0 1.70
Note:1.R eve r se rec o very con di t ion IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reve rse voltage of 4.0V D.C.
3.Thermal resist an ce from jun ctio n to ambient at 0.375 ” (9.5mm)lead length,P.C.B. mounted
76 ELECTRONICS C O.,LTD.
LING JIE
RSTAR SEA
nvac
UF
4002 UF
4003 UF
4004 UF
4005 UF
4006 UF
4007
Dimensions in inches and (millimeters)
DO-41
0.107(2.7)
0.080(2.0)
DIA.
0.034(0.9)
0.028(0.7)
DIA.
1.0 (25.4)
MIN.
0.205(5.2)
0.166(4.2)
1.0 (25.4)
MIN.
SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
• World Wid e We b Site - http: //www.se nsitro n.c om • E-Mail Address - sales@sensitr on. com •
UF4001-UF4007
Data Sheet 2629, Rev. A
RATINGS AND CHARACTERISTIC CURVES UF4001 THRU UF4007
1.0
0.8
0.6
0.4
0.2
00 25 50 75 100 125 150 175
30
25
20
15
10
5.0
0.2 0.6 1.0 1.4 1.8 2.0
0.1 1.0 10 100
0.01 0.1 1 10 100
100
10
1
0.1
REVERSE VOLTAGE,VOLTS t,PULSE DURATION ,sec.
FIG. 5-TYPIC AL JUNCTION CAPACITANCE FI G. 6-TY PICAL T R ANS I ENT THERMAL IM P EDA NCE
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
NUMBER OF CYCL ES AT 6 0 Hz
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG. 1- FORW ARD CURRENT DERA TING CUR VE
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
110100
0.01
0.1
1
20
10
TJ=25 C
1
10
100
200
0 20 40 60 80 100
1,000
100
10
1
0.1
0.01
TJ=100 C
TJ=25 C
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
AMBIENT TEMPERATURE, C
77 ELECTRONICS CO.,LTD.
LING JIE
RST AR SEA
nvac
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
8.3ms SINGLE HALF SIN E-WAVE
(JEDEC Method)
UF4001-UF4004
UF4005-UF4007
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
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