TEXAS INSTR {OPTO} / | be DE Bacei72, coseeer es a 8961726 TEXAS INSTR OPTO) Do 62C 36669 OD ) a 7 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS 7- 33-7 NOVEMBER 1983 REVISED OCTOBER 1984 40 W at 25C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25C Designed for Switching-Mode Power Supplies, CRT Scanning, inverters, and Other Industrial Applications Where Rapid Switching of Inductive Loads is Necessary : : + device schematic TO-220AB PACKAGE EMITTER COLLECTOR - BASE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) i - BUX84 current current NOTE 1: This value appiles forty < 2 ms, duty cycle 42%. BD, BDW, BDX, BU, BUX, BUY Devices 1283 TEXAS % INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 3-73 TEXAS INSTR {0PTO} pee eee a qd Ang xna na xdg maa ag Bos) b2 DE Patei726 coane70 a BUX84, BUX85 re 8961726 TEXAS INSTR COPTO) N-P-N SILICON POWER TRANSISTORS 62C 36670 D y T-33-// electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER VcE(sat) TEST CONDITIONS o my itt Q m ao m m a oO m Kp ap eal ca = NOTES: 2. Inductive loop switching measurement. 3, These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. : 4. To obtain fT, the [hre| response is extrapolated at the rate of 6 dB per octave from f = 1 MHz to the frequency at which Ihjel = 1. thermal characteristics |__PARAMETER [Raye { MIN TYP MAX | UNIT | 2.6 | ecw | resistive-load switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ton 0.25 0.5 Bs ts lc=1A, Vec=250V, SeeFigure 1, Tc = 25C 1.8 us tt 1g, =0.2A, Iga7=-0.4A 0.2 us tt Tce = 95C 0.4 HS SSDIN9 3-74 TEXAS wy 1263 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 TEXAS INSTR {COPTOF pea . uy s 8861726 TEXAS INSTR COPTO) be de Jace172, ooate7, y 62 36671 OO | - BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T:33-)! PARAMETER MEASUREMENT INFORMATION Sv Veo 7 250V GND ty 2 20 us Tip29 Duty Cycle = 1% CURRENT WAVEFORMS FIGURE 1. RESISTIVE-LOAD SWITCHING BD, BDW, BDX, BU, BUX, BUY Devices 1283 wy TEXAS , 3-75 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75266 TEXAS INSTR TOPTOF BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS { 961726 TEXAS INSTR COPTO) | L b2 DE Pfasei726 ooanb72 4 ff 62C 36672 7-33-// o | TYPICAL CHARACTERISTICS t FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT hgeForward Current Transfer Ratio IcES Collector Cutoff Current pA . COLLECTOR CUTOFF CURRENT vs CASE TEMPERATURE 10 Voe = 800 V VpE=0 1 0.4 0.1 0.04 0.01 0,004 0,001 o 0.1 0.4 1 4 10 -60 -30 0 30 60 90 120 oO ICollector CurrentA Tc Case Temperature C ow FIGURE 2 FIGURE 3 QO Ss MAXIMUM SAFE OPERATING AREA . o MAXIMUM COLLECTOR CURRENT Oo vs LIMITING CONDITIONS x COLLECTOR-EMITTER VOLTAGE FOR POWER-DOWN TRANSIENT ' 10 3.5 T T T . o Tc = 25C IB1S1A f <4 0.5A<Iigg<-1A ' Y 3 \ To < 100C 7 i WO x Cc 8 < x E 125 7 o 1 E 9 = 2 Cc 50a DC Operation \ | 9 o < 3 B45 N | Oo 3 Eo. 8 < & | \ = 3s 2 oO i 0.04 ~ \ a 2 O5 0.01 0 1 4 10 40 100 400 1k 0 200 400 = 600-s80 (s VceE-Collector-Emitter VottageV VcE Collector-Emitter Voltage V FIGURE 4 FIGURE 5 u 3-76 TEXAS ay 1283 INSTRUMENTS POST OFFICE BOX 226012 @ DALLAS, TEXAS 75265 - | TEXAS INSTR {OPTO} 3 . b2 De fasci7ee oosue73 a (Sse1726 TEXAS INSTR COPTOD 620 36673. oo ! BUX84, BUX85 i N-P-N SILICON POWER TRANSISTORS , T-33- | THERMAL INFORMATION DISSIPATION DERATING CURVE THERMAL RESPONSE g 1 100 3 e @ o "80 5 " E 1 0.2 2 ; E oo 5 3 | z 3 C4 & 5 40 E 0.04 E . ti S . a = a9 | Y 0.02 Duty Cycle = t1 fe Note 5 S001 0 S w-5 1-4 10-3 10-2 10-1 10-0 0 30 6 90 120 150 t1 Power Pulse Duration s TeCase TemperatureC FIGURE 6 FIGURE 7 zZ NOTE 5: Read time at end of t1, TJ(max) TC = PDipeak) * (#2) Resci{max). BD, BDW, BDX, BU, BUX, BUY Devices [ J wy | EXAS 377. ' INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 1283 oo.