MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60 Unit Vdc Vdc Vdc mAdc -60 -5.0 -600 THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol Max Unit PD 225 1.8 mW mW/ C R qJA 556 C/W PD 300 2.4 mW mW/ C R qJA 417 C/W TJ,Tstg -55 to +150 C DEVICE MARKING MMBT2907=M2B; MMBT2907A=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit V(BR)CEO -40 -60 - Vdc Collector-Base Breakdown Voltage (IC= -10 Adc, IE=0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) V(BR)EBO -5.0 - Vdc ICEX - -50 nAdc MMBT2907 MMBT22907A MMBT2907 MMBT2907A ICBO - -0.020 -0.010 -20 -10 nAdc MMBT2907A IB - -50 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) MMBT2907 MMBT2907A Collector Cutoff Current (VCE= -30 Vdc, VEB (0ff )= -0.5Vdc) Collector Cutoff Current (VCB= -50 Vdc, IE=0) (VCB= -50Vdc, IE=0, TA=125 C) Base Cutoff Current (VCE= -30Vdc, VEB(off )= -0.5Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina WEITRON http://www.weitron.com.tw MMBT2907 MMBT2907A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max 35 75 Unit ON CHARACTERISTICS DC Current Gain hFE (IC= -0.1 mAdc, VCE= -10 Vdc) MMBT2907 MMBT2907A (IC= -1.0 mAdc, VCE= -10 Vdc) MMBT2907 MMBT22907A 50 100 - (IC= -10 mAdc, VCE= -10 Vdc) MMBT2907 MMBT22907A 75 100 - (IC= -150 mAdc, VCE= -10 Vdc) MMBT2907 MMBT2907A 100 300 (IC= -500 mAdc, VCE= -10 Vdc) MMBT2907 MMBT2907A 30 50 - - -0.4 -1.6 Vdc - -1.3 -2.6 Vdc fT 200 - MHz Cobo - 8.0 pF Cibo - 30 pF Min Max Unit ton - 45 td - 10 tr - 40 toff - 100 ts - 80 tf - 30 Collector-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) VCE(sat) VBE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (1),(2) (IC= -50 mAdc, VCE -=20 Vdc, f=100MHz) Output Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -2.0 Vdc, IC=0, f=1.0MHz) ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol SWITCHING CHARACTERISTICS Turn-On Time Delay Time (VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc) Rise Time Turn-Out Time Storage Time (VCC= -60 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc) Fall Time _2.0%. 1.Pulse Test:Pulse Width=300 s, Duty Cycle < 2.fT is defined as the frequency at which hfe extrapolates to unity. WEITRON http://www.weitron.com.tw ns MMBT2907 MMBT2907A VCE=5V 400 125 C 300 25 C 200 100 -40 C 0 0.1 0.3 1 3 10 30 100 300 IC COLLECTOR CURRENT(mA) FIG.1 Typical Pulsed Current Gain vs Collector Current 1 -40 C 0.8 25 C 0.6 125 C 0.4 b=10 0.2 0 1 10 100 500 Ic-COLLECTOR CURRENT (mA) 100 0.5 b=10 0.4 0.3 25 C 0.2 125 C 0.1 -40 C 0 1 10 100 500 IC COLLECTOR CURRENT(mA) FIG.2 Collector-Emitter Saturation Voltage vs collector Current 1 0.8 -40 C 25 C 0.6 125 C 0.4 VCE=5V 0.2 0 0.1 1 10 25 Ic-COLLECTOR CURRENT (mA) FIG.4 Base Emitter ON Voltage vs Collector Current 20 VCB=35V CAPACITANCE (pF) ICBO-COLLECTOR CUREENT (nA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current VCEBAT COLLECTOR EMITTER VOLTAGE (V) 500 VBEON BASE EMITTER ON VOLTAGE (V) VBEST BASE EMITTER VOLTAGE (V) hFE TYPICAL PULSED CURRENT GAIN Typical Electrical Characteristics 10 1 0.1 0.01 25 50 75 100 TA- AMBIENT TEMPERATURE ( C) FIG.5 Collector-Cutoff Current vs. Ambient Temperature WEITRON http://www.weitron.com.tw 125 16 12 Cib 8 Cob 4 0 -0.1 -1 -10 REVERSE BIAS VOLTAGE (V) FIG.6 Input and Output Capacitance vs Reverse Bias Voltage -50 MMBT2907 MMBT2907A Typical Characteristics(Continued) 500 250 I IB1=IB2= c 10 400 TIME (nS) VCC=15V 100 tr 50 300 200 t off tf 100 t on td 0 10 IB1=IB2= Ic 10 VCC=15V ts 150 TIME (nS) 200 100 0 10 1000 100 FIG.8 Turn On and Turn Off Times vs Collector Cuttent 50 20 10 tr=15V 5 30ns 2 60ns 10 100 IC COLLERTOR CURRENT (mA) FIG.9 Rise Time vs Collector and Turn On Base Current WEITRON http://www.weitron.com.tw 500 PD POWER DISSIPATION (W) IB1 TURN ON BASE CURRENT (mA) FIG.7 Switching Times vs Collector Current 1 1000 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) 1 0.75 0.5 SOT-23 0.25 00 25 50 75 100 125 150 TEMPERATURE ( C) FIG.10 Power Dissipation vs Ambient Temperature MMBT2907 MMBT2907A FIG.11 Saturated Turn-On Switching Time FIG.12 Saturated Turn-Off Switching Time WEITRON http://www.weitron.com.tw MMBT2907 MMBT2907A SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M