MIXA80WB1200TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 265 A IC25 = 60 A IC25 = 120 A = 1100 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V IFSM Part name (Marking on product) MIXA80WB1200TEH E72873 Pin configuration see outlines. 21 D11 D13 22 D7 D15 2 3 D12 D14 D16 D1 18 T1 15 7 1 16 T3 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 4 5 6 14 20 12 T4 D4 13 D6 T6 9 10 23 24 Features: Application: Package: * Easy paralleling due to the positive temperature coefficient of the on-state voltage * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * AC motor drives * Solar inverter * Medical equipment * Uninterruptible power supply * Air-conditioning systems * Welding equipment * Switched-mode and resonant-mode power supplies * "E3-Pack" standard outline * Insulated copper base plate * Soldering pins for PCB mounting * Temperature sense included Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 20160518e 1-9 MIXA80WB1200TEH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 77 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 3 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 120 84 A A TC = 25C 390 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.8 2.1 5.4 6.0 6.5 V 0.03 0.6 0.2 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 75 A 230 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 75 A VGE = 15 V; RG = 10 W TVJ = 125C 70 40 250 100 6.8 8.3 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 10 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 15 V; RG = 10 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 125C 225 A 10 s A 0.32 K/W 300 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 100 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -1600 A/s IF = 100 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25C 1200 V TC = 25C TC = 80C 135 90 A A 2.2 V V TVJ = 25C TVJ = 125C 1.95 1.95 TVJ = 125C 12.5 100 350 4 C A ns mJ 0.4 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 20160518e 2-9 MIXA80WB1200TEH Brake T7 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 35 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 1.5 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 60 40 A A TC = 25C 195 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C 1.8 2.1 5.4 6.0 6.5 V 0.01 0.1 0.1 mA mA 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A 107 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 35 A VGE = 15 V; RG = 27 W TVJ = 125C 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 27 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current RthJC thermal resistance junction to case VCE = 900 V; VGE = 15 V; RG = 27 W; non-repetitive TVJ = 125C 105 A 10 s A 0.64 K/W Ratings typ. max. Unit 140 Brake Chopper D7 Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 44 29 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ = 25C TVJ = 125C 1.95 1.95 2.2 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.01 0.15 0.1 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = 600 A/s IF = 30 A; VGE = 0 V TVJ = 125C 3.5 30 350 0.9 RthJC thermal resistance junction to case C A ns mJ 1.2 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 20160518e 3-9 MIXA80WB1200TEH Input Rectifier Bridge D11 - D16 TVJ = 25C Ratings typ. max. 1600 Unit V sine 180 rect.; d = 1/3 TC = 80C TC = 80C 94 265 A A max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 1100 970 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 6000 4700 A2s A2s Ptot total power dissipation TC = 25C 250 W VF forward voltage IF = 150 A TVJ = 25C TVJ = 125C 1.3 1.3 1.6 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.05 2.0 0.1 mA mA RthJC thermal resistance junction to case (per diode) 0.5 K/W min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit C C C 3000 V~ Symbol VRRM Definitions max. repetitive reverse voltage IFAV IDAVM average forward current max. average DC output current IFSM Conditions min. Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions TC = 25C resistance Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Conditions -40 IISOL < 1 mA; 50/60 Hz 200 Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink with heatsink compound Weight 6 Nm mm mm 5 mW 0.01 K/W 300 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Ratings typ. max. 0.87 2.7 Unit V mW TVJ = 150C 1.1 17.9 V mW D1 - D6 TVJ = 150C 1.09 9.1 V mW IGBT T7 TVJ = 150C 1.1 40 V mW free wheeling diode D7 TVJ = 150C 1.2 27.0 V mW Definitions rectifier diode Conditions D8 - D13 min. TVJ = 150C V0 R0 IGBT T1 - T6 V0 R0 free wheeling diode V0 R0 V0 R0 TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 20160518e 4-9 MIXA80WB1200TEH Circuit Diagram 21 D11 D13 22 D7 D15 2 3 D12 D14 D16 D1 18 T1 15 7 1 16 T3 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 4 5 6 14 20 12 T4 D4 13 D6 T6 9 10 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Part number 2D Data Matrix XXX XX-XXXXX Logo UL Part number YYWWx Date Code Location Ordering Part Name Marking on Product Standard MIXA80WB1200 TEH MIXA80WB1200TEH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved M I XA 80 WB 1200 T EH = Module = IGBT = XPT standard = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = E3-Pack Delivering Mode Base Qty Ordering Code Box 5 509112 20160518e 5-9 MIXA80WB1200TEH Inverter T1 - T6 140 IC [A] 140 VGE = 15 V 120 120 100 100 TVJ = 25C 80 60 [A] 40 20 20 0.5 1.0 1.5 2.0 2.5 3.0 9V 60 40 0 0.0 0 0.0 3.5 11 V TVJ = 125C IC 80 TVJ = 125C 13 V VGE = 15 V 17 V 19 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 140 IC = 75 A VCE = 600 V 120 15 100 80 VGE [A] 60 [V] IC 40 5 TVJ = 125C 20 0 10 TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 50 100 150 16 9 10 E E 8 [mJ] 6 [mJ] 4 Eoff 0 0 20 40 Eoff 8 7 Eon IC = 75 A VCE = 600 V VGE = 15 V TVJ = 125C 6 Eon 2 300 10 RG = 10 VCE = 600 V VGE = 15 V TVJ = 125C 12 250 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. transfer characteristics 14 200 QG [nC] VGE [V] 60 80 100 120 140 160 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 5 8 10 12 14 16 18 20 22 24 RG [] Fig. 6 Typ. switching energy vs. gate resistance 20160518e 6-9 MIXA80WB1200TEH Inverter D1 - D6 24 200 TVJ = 125C VR = 600 V 20 150 200 A Qrr 16 IF 100 [A] 100 A [C] 12 TVJ = 125C 50 TVJ = 25C 0 0.0 0.5 1.0 50 A 8 1.5 2.0 2.5 4 1000 3.0 1200 1400 160 2000 2200 700 TVJ = 125C 140 [A] 1800 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt Fig. 7 Typ. Forward current versus VF IRM 1600 diF /dt [A/s] VF [V] 200 A 600 100 A 500 VR = 600 V 120 trr 50 A 100 TVJ = 125C VR = 600 V 200 A 400 [ns] 300 80 100 A 200 60 50 A 100 40 1000 1200 1400 1600 1800 2000 0 1000 2200 1200 1400 1600 1800 2000 2200 diF /dt [A/s] diF /dt [A/s] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 1 8 200 A TVJ = 125C VR = 600 V Diode 6 IGBT 100 A Erec ZthJC 0.1 4 [mJ] 50 A Inverter IGBT [K/W] Ri 2 0 1000 1200 1400 1600 1800 2000 2200 diF /dt [A/s] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 0.01 0.001 0.01 Inverter FRD ti Ri ti 1 0.072 0.002 0.092 0.002 2 0.037 0.03 0.067 0.03 3 0.156 0.03 0.155 0.03 4 0.055 0.08 0.086 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20160518e 7-9 MIXA80WB1200TEH Brake T7 & D7 70 60 VGE = 15 V 60 50 50 IC 40 [A] 30 40 IF TVJ = 25C TVJ = 125C 20 20 TVJ = 125C 10 10 0 30 [A] 0 1 2 TVJ = 25C 0 0.0 3 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 VF [V] Fig. 14 Typ. forward characteristics Fig. 13 Typ. output characteristics 10 100000 10000 diode 1 ZthJC IGBT R [] [K/W] Brake IGBT 0.1 0.01 0.001 0.01 Brake FRD Ri ti 1 0.152 0.002 2 0.0724 0.03 0.2171 0.03 3 0.0378 0.03 0.3475 0.03 4 0.1078 0.08 0.2941 0.08 0.1 Ri ti 100 0.3413 0.002 1 10 tP [s] Fig. 15 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 1000 10 0 25 50 75 100 125 150 TC [C] Fig.16 Typ. NTC resistance vs. temperature 20160518e 8-9 MIXA80WB1200TEH Rectifier D11 - D16 200 10 4 900 TVJ = 125C TVJ = 25C 800 150 IFS M IF TVJ= 45C TVJ = 45C 700 I 2t 600 [A s ] 100 [A ] [A ] 50 2 TVJ = 150C 500 0 0.0 0.5 1.0 1.5 50Hz, 80% VRRM 400 0.001 2.0 0.01 V F [V ] 0.1 P to t 1 2 3 4 5 6 7 8 91 0 t [m s ] 2 Fig. 2 Surge overload current vs. time per diode RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 60 10 3 1 t [s ] Fig. 1 Forward current vs. voltage drop per diode 80 TVJ= 150C 40 Fig. 3 I t vs. time per diode 140 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 I d A V 80 [A ] 60 [W ] 40 20 20 0 0 10 20 30 40 50 60 70 0 20 I d A V M [A ] 40 60 80 100 120 140 160 0 0 25 50 T a m b [C ] 75 100 125 150 T C [C ] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 Z thJ C 0.3 i Rth (K/W) ti (s) [K /W ] 1 0.040 0.004 0.2 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 0.1 0.0 1 10 100 1000 10000 t [s ] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, test conditions and dimensions. (c) 2016 IXYS All rights reserved 20160518e 9-9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: MIXA80WB1200TEH