A g i l e n t Technologies Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers Diodes (continued) Please reference artwork on previous page. Surface Mount RF Schottky Barrier Diodes Mfr.Os Type Bulk Tape and Reel 5082-2800 HSMS-2800-BLK HSMS-2802-BLK HSMS-2804-BLK HSMS-2805-BLK 5082-2810 HSMS-2812-BLK HSMS-2814-BLK HSMS-2815-BLK 5082-2835 HSMS-2820-BLK HSMS-2822-BLK HSMS-2823-BLK HSMS-2824-BLK HSMS-2825-BLK N N HSMS-2802-TR1 N N N HSMS-2812-TR1 N HSMS-2815-TR1 N N HSMS-2822-TR1 N N HSMS-2825-TR1 Fig. 1 2 4 3 5 1 4 3 5 1 2 4 6 3 5 Surface Mount RF Schottky Barrier Diodes (continued) Min. V BR (V) @ 10 A IR = 100 A Max. CT (pF) @ VR = 0 V Max. VF @ 1 mA (mV) f = 100 MHz IF = 10 mA aIF = 5 mA 70 70 70 70 70 20 20 20 20 N 15 15 15 15 15 2.0 2.0 2.0 2.0 2.0 1.2 1.2 1.2 1.2 N 1.0 1.0 1.0 1.0 1.0 410 410 400 400 400 400 400 400 400 480 340 340 340 340 340 Mfr.Os Type Bulk Tape and Reel HSMS-2829-BLK N Fig. Min. V BR (V) @ 10 A IR = 100 A Max. CT (pF) @ VR = 0 V Max. VF @ 1 mA (mV) f = 100 MHz IF = 10 mA aIF = 5 mA 7 15 1.0 340 Surface Mount High Performance Schottky Diodes DC Electrical Specifications: TA = +25C, single diode. Mfr.Os Type Bulk Tape and Reel HSMS-2850-BLK N HSMS-2855-BLK HSMS-2863-BLK N HSMS-2852-TR1 N N Fig. Max. Forward Voltage VF (mV) IF = 1.0 mA Min. Breakdown Voltage VBR (V) IR = 10 A Typ. CT (pF) @ VR = 0.5 to 1.0 V f = 1 MHz 2 4 5 6 150 150 150 250 250 250 250 350 0.30 0.30 0.30 0.25 Silicon Monolithic Integrated Circuits Low Noise Amplifiers Typical specifications at +25C case temperature. Mfr.Os Type GP @ 0.1 GHz (dB) GP @ 1 GHz (dB) NF @ 1 GHz (dB) P1dB (dBm) Min. Supply Voltage (V cc)* Device Voltage (Vd)* Device Current (mA)* Package INA-02186-BLK INA-10386-BLK MSA-0611-BLK 31.5 25.0 19.5 28.5 25.0 15.0 2.0 3.7 3.2 +11.0 +11.0 +2.0 5.5 6.0 5.0 5.5 6.0 3.3 35 50 16 86 Plastic 86 Plastic SOT-143 SM Plastic *Refer to schematic drawing. Noise figure at 0.5 GHz. General Purpose GaAs FETs Typical specifications at +25C case temperature. Mfr.Os Type Gate Width (m) Optimum Freq. Range (GHz) Test Freq. (GHz) NF o (dB) Ga (dB) P1dB (dBm) Package ATF-26884-STR 250 2.0-16 12 2.2 9.0 +18 84 Plastic High Speed Digital Communications Variable Gain Control Amplifier Typical specifications at +25C case temperature. Mfr.Os Type GP @ (dB) Gain Control Range (dB) 3 db Bandwidth (GHz) P1dB @ 0.5 GHz Supply Voltage (V) Device Current (mA) Package IVA-14208-STR 24 @ 1.0 GHz 34 @ 1.0 GHz 2.5 N 6 3.8 SO-8 SM Plastic Wide Dynamic Range Amplifier Typical specifications at +25C case temperature. Mfr.Os Type GP @ 0.1 GHz (dB) GP @ 1 GHz (dB) NF (dB) P1dB (dBm) Min. Supply Voltage (Vcc)* Device Voltage (Vd)* Device Current (mA)* Package MSA-1105-STR 12.5 10.5 4.2 +17.5 8 5.5 60 05 Plastic *Refer to schematic drawing. Low Noise Amplifier Typical specifications at +25C case temperature. Mfr.Os Type GP @ 0.1 GHz (dB) GP @ 1 GHz (dB) NF @ 1 GHz (dB) P1dB (dBm) Min. Supply Voltage (Vcc)* Device Voltage (Vd)* Device Current (mA)* Package INA-03184-BLK 25.5 25.0 2.6 2.0 4 4.0 10 84 Plastic *Refer to schematic drawing. 3-Port Double-Balanced Mixers Typical specifications at +25C case temperature. Mfr.Os Type RF and LO Freq. (GHz) Active Max. IF Freq. with Gain (GHz) RF-IF Gain (dB) IP3 (dBm) LO-RF Iso. (dB) Supply Voltage (V) Device Current (mA) Package IAM-82008-STR IAM-81008-STR 0.05-5.0 0.05-5.0 Up to 2.0 Up to 1.0 15.0* 8.5 +18* +3 22* 30 10 5 55 13 SO-8 SM SO-8 SM *Noise figure at 0.1 GHz. Refer to schematic drawing. Turn To Section 1 For Allied Office Addresses and Local Phone Numbers ALLIED c 791 13