Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers
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c
791
Agilent
Technologies
Mfr.Õs
Type
Fig.
Min. V
BR
(V) @
10 µA
I
R
= 100 µA
Max. C
T
(pF)
@ V
R
= 0 V
Max. V
F
@
1 mA (mV)
f = 100 MHz
I
F
= 10 mA
àI
F
= 5 mA
Bulk Tape and
Reel
HSMS-2829-BLK Ñ 7 15 1.0 340
Surface Mount High Performance Schottky Diodes
DC Electrical Specifications: T
A
= +25¡C, single diode.
Mfr.Õs
Type
Fig.
Min. V
BR
(V) @
10 µA
I
R
= 100 µA
Max. C
T
(pF)
@ V
R
= 0 V
Max. V
F
@
1 mA (mV)
f = 100 MHz
I
F
= 10 mA
àI
F
= 5 mA
Bulk Tape and
Reel
5082-2800 Ñ 1 70 2.0 410
HSMS-2800-BLK Ñ 2 70 2.0 410
HSMS-2802-BLK HSMS-2802-TR1 4 70 2.0 400
HSMS-2804-BLK Ñ 3 70 2.0 400
HSMS-2805-BLK Ñ 5 70 2.0 400
5082-2810 Ñ 1 20 1.2 400
HSMS-2812-BLK HSMS-2812-TR1 4 20 1.2 400
HSMS-2814-BLK Ñ 3 20 1.2 400
HSMS-2815-BLK HSMS-2815-TR1 5 20 1.2 400
5082-2835 Ñ 1 Ñ Ñ 480
HSMS-2820-BLK Ñ 2 15 1.0 340
HSMS-2822-BLK HSMS-2822-TR1 4 15 1.0 340
HSMS-2823-BLK Ñ 6 15 1.0 340
HSMS-2824-BLK Ñ 3 15 1.0 340
HSMS-2825-BLK HSMS-2825-TR1 5 15 1.0 340
Surface Mount RF Schottky Barrier Diodes (continued)
Mfr.Õs
Type
Fig.
Max.
Forward
Voltage
V
F
(mV)
IF = 1.0 mA
Min.
Breakdown
Voltage
V
BR
(V)
I
R
= 10 µA
Typ. C
T
(pF)
@ VR = Ð0.5 to Ð1.0 V
f = 1 MHz
Bulk Tape and
Reel
HSMS-2850-BLK Ñ 2 150 250 0.30
Ñ HSMS-2852-TR1 4 150 250 0.30
HSMS-2855-BLK Ñ 5 150 250 0.30
HSMS-2863-BLK Ñ 6 250 350 0.25
Diodes (continued)
Please reference artwork on previous page.
Surface Mount RF Schottky Barr ier Diodes
Silicon Monolithic Integrated Circuits
Low Noise Amplifiers
Typical specifications at +25¡C case temperature.
GP @ GP @ NF @ Min. Supply Device Device
Mfr.Õs P
1dB
0.1 GHz 1 GHz 1 GHz Voltage Voltage Current Package
Type (dBm)
(dB) (dB) (dB) (V
cc
)* (V
d
)* (mA)*
INA-02186-BLK 31.5 28.5 2.0 +11.0 5.5 5.5 35 86 Plastic
INA-10386-BLK 25.0 25.0 3.7 +11.0 6.0 6.0 50 86 Plastic
MSA-0611-BLK 19.5 15.0 3.2 +2.0 5.0 3.3 16 SOT-143 SM Plastic
*Refer to schematic drawing. Noise figure at 0.5 GHz.
General Purpose GaAs FETs
Typical specifications at +25¡C case temperature.
Optimum
Mfr.Õs Gate Width Test Freq. NF
o
G
a
P
1dB
Freq. Range Package
Type (µm) (GHz) (dB) (dB) (dBm)
(GHz)
ATF-26884-STR 250 2.0-16 12 2.2 9.0 +18 84 Plastic
High Speed Digital Communications
Variable Gain Control Amplifier
Typical specifications at +25¡C case temperature.
Gain 3 db Supply Device
Mfr.Õs GP @ P
1dB
@
Control Range Bandwidth Voltage Current Package
Type (dB) 0.5 GHz
(dB) (GHz) (V) (mA)
IVA-14208-STR 24 @ 1.0 GHz 34 @ 1.0 GHz 2.5 Ñ 6 3.8 SO-8 SM Plastic
Wide Dynamic Range Amplifier
Typical specifications at +25¡C case temperature.
GP @ GP @ Min. Supply Device Device
Mfr.Õs NF P
1dB
0.1 GHz 1 GHz Voltage Voltage Current Package
Type (dB) (dBm)
(dB) (dB) (V
cc
)* (V
d
)* (mA)*
MSA-1105-STR 12.5 10.5 4.2 +17.5 8 5.5 60 05 Plastic
*Refer to schematic drawing.
Low Noise Amplifier
Typical specifications at +25¡C case temperature.
GP @ GP @ NF @ Min. Supply Device Device
Mfr.Õs P
1dB
0.1 GHz 1 GHz 1 GHz Voltage Voltage Current Package
Type (dBm)
(dB) (dB) (dB) (V
cc
)* (V
d
)* (mA)*
INA-03184-BLK 25.5 25.0 2.6 Ð2.0 4 4.0 10 84 Plastic
*Refer to schematic drawing.
3-Port Double-Balanced Mixers
Typical specifications at +25¡C case temperature.
RF and LO Active Max. IF RF-IF LO-RF Supply Device
Mfr.Õs IP
3
Freq. Freq. with Gain Gain Iso. Voltage Current Package
Type (dBm)
(GHz) (GHz) (dB) (dB) (V) (mA)
IAM-82008-STR 0.05-5.0 Up to 2.0 15.0* +18* 22* 10 55 SO-8 SM
IAM-81008-STR 0.05-5.0 Up to 1.0 8.5 +3 30 5 13 SO-8 SM
*Noise figure at 0.1 GHz. Refer to schematic drawing.
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