Data Sheet 4V Drive Nch MOSFET RT1E060XN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSST8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : XR Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RT1E060XN Inner circuit Taping TCR 3000 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Unit 30 20 6 V V A *1 24 1 24 A A A *2 VGSS ID IDP *1 IS Pulsed ISP PD Power dissipation Channel temperature Range of storage temperature (7) (6) (5) 2 Limits VDSS Gate-source voltage (8) 1.25 W Tch Tstg 150 55 to 150 C C Symbol Limits Unit 100 C / W (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain 1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Rth (ch-a)* *Mounted on a ceramic board. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet RT1E060XN Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Conditions VGS=20V, VDS=0V 30 - - V ID=1mA, V GS=0V IDSS - - 1 A VDS=30V, VGS=0V VGS (th) 1.0 - 2.5 V - 16 22 ID=6A, VGS=10V - 21 29 m ID=6A, VGS=4.5V VDS=10V, ID=1mA Static drain-source on-state resistance RDS (on)* - 23 32 Forward transfer admittance l Yfs l * 4.5 - - S ID=6A, VDS=10V Input capacitance Ciss - 440 - pF VDS=10V Output capacitance Coss - 170 - pF VGS=0V Reverse transfer capacitance Crss - 85 - pF f=1MHz Turn-on delay time td(on) * - 8 - ns ID=3A, VDD 15V Rise time ID=6A, VGS=4.0V tr * - 16 - ns VGS=10V td(off) * - 32 - ns RL=5 tf * - 8 - ns RG=10 Total gate charge Qg * - 6.8 - nC ID=6A, VDD 15V Gate-source charge Qgs * Qgd * 1.6 2.6 - nC nC VGS=5V Gate-drain charge - Turn-off delay time Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=6A, VGS=0V *Pulsed www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet RT1E060XN Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics () Fig.1 Typical Output Characteristics () 6 6 VGS=3.0V Ta=25C Pulsed VGS=10.0V 5 5 VGS=4.5V VGS=4.5V 4 VGS=4.0V VGS=2.8V Drain Current : ID [A] Drain Current : ID [A] VGS=10.0V VGS=4.0V 3 2 1 VGS=2.5V 4 VGS=3.0V VGS=2.8V 3 2 1 VGS=2.5V Ta=25C Pulsed 0 0 0 0.2 0.4 0.6 0.8 1 0 2 4 Drain-Source Voltage : VDS [V] 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 100 VGS=10V pulsed Ta=25C Pulsed Static Drain-Source On-State Resistance RDS(on) [m] Static Drain-Source On-State Resistance RDS(on) [m] 8 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 10 VGS=4.0V VGS=4.5V VGS=10V 1 0.01 0.1 1 10 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.01 100 0.1 Drain Current : ID [A] 1 10 100 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 100 100 10 1 0.01 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [m] VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [m] 6 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 1 10 1 0.01 100 Drain Current : ID [A] www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 10 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 1 10 100 Drain Current : ID [A] 3/6 2011.04 - Rev.A Data Sheet RT1E060XN Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VDS=10V pulsed VDS=10V pulsed Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] 10 10 1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 0.01 0.001 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.1 0.01 0.001 0.01 0.1 1 10 100 0.0 1.0 2.0 2.5 3.0 3.5 Drain Current : ID [A] Fig.9 Source Current vs. Source-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [m] Ta=25C Pulsed 10 Ta=125C Ta=75C Ta=25C Ta=-25C 1 0.1 80 ID=6.0A ID=3.0A 60 40 20 0 0.01 0.0 0.5 1.0 1.5 0 2.0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 10 VDD15V VGS=10V RG=10 Ta=25C Pulsed 100 Ta=25C VDD=15V ID=6A Pulsed 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] 100 Source Current : Is [A] 0.5 td(off) td(on) 10 6 4 2 tr 1 0 0.01 0.1 1 10 100 0 4 6 8 10 12 14 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 2 4/6 2011.04 - Rev.A Data Sheet RT1E060XN Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25C f=1MHz VGS=0V Drain Current : ID [ A ] Capacitance : C [pF] 10 1000 Ciss 100 Coss 1 10 PW = 1ms PW = 10ms Ta=25C Single Pulse Mounted on a ceramic board. (30mm x 30mm x 0.8mm) 10 0.1 1 0.1 Crss 0.01 PW = 100s 0.01 0.01 100 0.1 1 DC operation 10 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : rt 10 Ta=25C Single Pulse 1 0.1 0.01 Mounted on a ceramic board. (30mm x 30mm x 0.8mm) Rth(ch-a)=100C/W Rth(ch-a)(t)=r(t)xRth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet RT1E060XN Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A