Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
4V Drive Nch MOSFET
RT1E060XN
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSST8).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TCR
Basic ordering unit (pieces) 3000
RT1E060XN
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage VDSS 30 V
Gate-source voltage VGSS 20 V
Continuous ID6A
Pulsed IDP 24 A
Continuous IS1A
Pulsed ISP 24 A
Power dissipation PD1.25 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol Limits Unit
Channel to Ambient Rth (ch-a) 100 C / W
*Mounted on a ceramic board.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*
(1) Drain
(2) Drain
(3) Drain
(4) Gate
(5) Source
(6) Drain
(7) Drain
(8) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*2
*1
*1
TSST8
(1) (2) (3) (4)
(8) (7) (6) (5)
Abbreviated symbol : XR
∗1
(8) (7)
(1) (2)
∗2
(6) (5)
(3) (4)
1/6 2011.04 - Rev.A
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Data Sheet
RT1E060XN
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 30 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --1AV
DS=30V, VGS=0V
Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA
-1622 I
D=6A, VGS=10V
-2129 I
D=6A, VGS=4.5V
-2332 I
D=6A, VGS=4.0V
Forward transfer admittance l Yfs l 4.5 - - S ID=6A, VDS=10V
Input capacitance Ciss - 440 - pF VDS=10V
Output capacitance Coss - 170 - pF VGS=0V
Reverse transfer capacitance Crss - 85 - pF f=1MHz
Turn-on delay time td(on) -8-nsI
D=3A, VDD 15V
Rise time tr- 16 - ns VGS=10V
Turn-off delay time td(off) - 32 - ns RL=5
Fall time tf-8-nsR
G=10
Total gate charge Qg- 6.8 - nC ID=6A, VDD 15V
Gate-source charge Qgs - 1.6 - nC VGS=5V
Gate-drain charge Qgd - 2.6 - nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=6A, VGS=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance RDS (on)
*
*
*
*
*
*
*
*
*
*
2/6 2011.04 - Rev.A
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Data Sheet
RT1E060XN
Electrical characteristic curves (Ta=25C)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1
Drain Current : ID [A]
Drain-Source Voltage : VDS [V]
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V VGS=2.8V
VGS=3.0V Ta=25°C
Pulsed
0
1
2
3
4
5
6
0 2 4 6 8 10
Drain Current : ID [A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=2.5V
VGS=10.0V
VGS=4.0V
VGS=4.5V
VGS=2.8V
VGS=3.0V
Ta=25°C
Pulsed
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
Ta=25°C
Pulsed
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
VGS=10V
pulsed
T
a=125
°C
Ta=75°
C
Ta=25°
C
Ta=-25°C
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
10
100
0.01 0.1 1 10 100
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
V
GS
=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6 2011.04 - Rev.A
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Data Sheet
RT1E060XN
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
Forward Transfer Admittance
Yfs [S]
Drain Current : ID [A]
Fig.7 Forward Transfer Admittance vs. Drain Current
V
DS
=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Drain Currnt : ID [A]
Gate-Source Voltage : VGS [V]
Fig.8 Typical Transfer Characteristics
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0
Source Current : Is [A]
Source-Drain Voltage : VSD [V]
Fig.9 Source Current vs. Source-Drain Voltage
V
GS
=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
20
40
60
80
100
0 2 4 6 8 10
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
ID=6.0A
ID=3.0A
Ta=25°C
Pulsed
1
10
100
1000
0.01 0.1 1 10 100
Switching Time : t [ns]
Drain Current : ID [A]
Fig.11 Switching Characteristics
td(on)
tr
td(off)
tf
V
DD
≒15V
V
GS=10V
R
G=10Ω
T
a=25°C
Pulsed
0
2
4
6
8
10
0246810 12 14
Gate-Source Voltage : VGS [V]
Total Gate Charge : Qg [nC]
Fig.12 Dynamic Input Characteristics
Ta=25°C
VDD=15V
ID=6A
Pulsed
4/6 2011.04 - Rev.A
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Data Sheet
RT1E060XN
10
100
1000
10000
0.01 0.1 1 10 100
Capacitance : C [pF]
Drain-Source Voltage : VDS [V]
Fig.13 Typical Capacitance vs. Drain-Source Voltage
T
a=25
°
C
f=1MHz
VGS=0V
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Drain Current : ID [ A ]
Drain-Source Voltage : VDS [ V ]
Fig.14 Maximum Safe Operating Area
DC operation
T
a=25
°
C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Operation in this area is limited by R
DS(on)
(VGS = 10V)
PW = 100μs
PW = 1ms
PW = 10ms
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Transient Thermal Resistance : r（t）
Pulse width : Pw (s)
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
T
a=25
°
C
Single Pulse
Mounted on a ceramic board.
(30mm
× 30mm × 0.8mm)
Rth
(ch-a)=100°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
5/6 2011.04 - Rev.A
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Data Sheet
RT1E060XN
Measurement circuits
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
VGS
RG
VD
S
D.U.T.
ID
RL
VDD
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
V
GS
I
G(Const.)
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
6/6 2011.04 - Rev.A
R1120A
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Notice
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Notes
