72514HK TC-00003129/52 114HK/42814TKIM/90507TIIM PE No.A0925-1/5
Semiconductor Components Industries, LLC, 2014
July, 2014
http://onsemi.com
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1HN04CH
Features
4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Symbol Conditions Value Unit
Drain to Source Voltage VDSS 100 V
Gate to Source Voltage VGSS 20 V
Drain Current (DC) ID 270 mA
Drain Current (Pulse) IDP PW10s, duty cycle1% 1080 mA
Power Dissipation PD When mounted on ceramic substrate (900mm2
0.8mm) 0.6 W
Junction Temperature Tj 150 C
Storage Temperature Tstg 55 to +150 C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter Symbol Value Unit
Junction to Ambient RJA 208 C/W
When mounted on ceram i c substrate (900m m
2
0.8mm)
Electrical Characteristics at Ta 25C
Parameter Symbol Conditions Value Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS I
D=1mA, VGS=0V 100 V
Zero-Gate Voltage Drain Current IDSS V
DS=100V, VGS=0V 1 A
Gate to Source Leakage Current IGSS V
GS=±16V, VDS=0V
10 A
Gate Threshold Voltage VGS(th) VDS=10V, ID=100A 1.2 2.6 V
Forward Transconductance gFS V
DS=10V, ID=140mA 260 mS
Static Drain to Source On-State Resistance
RDS(on)1 ID=140mA, VGS=10V 6 8
RDS(on)2 ID=70mA, VGS=4V 6.8 9.8
Input Capacitance Ciss
VDS=20V, f=1MHz
15 pF
Output Capacitance
Coss 3.1 pF
Reverse Transfer Capacitance
Crss 0.9 pF
Continued on next page.
Orderin
g
numbe
r
: ENA0925C
Power MOSFET
100V, 8Ω, 270mA, Single N-Channel
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
1HN04CH
No.A0925-2/5
Continued from preceding page.
Parameter Symbol Conditions Value Unit
min typ max
Turn-ON Delay Time td(on)
See specified Test Circuit
10 ns
Rise Time tr 7.4 ns
Turn-OFF Delay Time td(off) 58 ns
Fall Time tf 39 ns
Total Gate Charge Qg
VDS=50V, VGS=10V, ID=270mA
0.9 nC
Gate to Source Charge Qgs 0.19 nC
Gate to Drain “Miller” Charge Qgd 0.26 nC
Forward Diode Voltage VSD I
S=270mA, VGS=0V 0.88 1.2 V
Ordering & Package Information Packing Type:TL Marking
Device Package
Shipping note
1HN04CH-TL-W
CPH3, SC-59
SOT-23, TO-236 3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection Switching Time Test Circuit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
1HN04CH
No.A0925-3/5
1HN04CH
No.A0925-4/5
1HN04CH
PS No.A0925-5/5
Package Dimensions
1HN04CH-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1: Gate
2: Source
3: Drain
Recommended Soldering
Footprint
Note on usage : Since the 1HN04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
0.6
2.4
0.95 0.95
1.4
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