DCR820SG DCR820SG Phase Control Thyristor Supersedes October 2000 version, DS4214-5.1 DS4214-6.0 July 2001 FEATURES KEY PARAMETERS Double Side Cooling VDRM 6500V High Surge Capability IT(AV) 387A ITSM 6000A dVdt* 1000V/s dI/dt 100A/s APPLICATIONS High Power Drives High Voltage Power Supplies DC Motor Control Welding Battery Chargers *Higher dV/dt selections available VOLTAGE RATINGS Type Number DCR820SG65 DCR820SG64 DCR820SG63 DCR820SG62 DCR820SG61 DCR820SG60 Repetitive Peak Voltages VDRM VRRM V Conditions 6500 6400 6300 6200 6100 6000 Tvj = 0 to 125C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Lower voltage grades available. Outline type code: G. See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR820SG62 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/10 www.dynexsemi.com DCR820SG CURRENT RATINGS Tcase = 60C unless stated otherwise Symbol Parameter Conditions Max. Units 387 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 608 A Continuous (direct) on-state current - 567 A 260 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 408 A Continuous (direct) on-state current - 357 A Conditions Max. Units 310 A IT Half wave resistive load CURRENT RATINGS Tcase = 80C unless stated otherwise Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 485 A Continuous (direct) on-state current - 447 A 204 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 321 A Continuous (direct) on-state current - 279 A IT Half wave resistive load 2/10 www.dynexsemi.com DCR820SG SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 4.8 kA VR = 50% VRRM - 1/4 sine 115 x 103 A2s 10ms half sine; Tcase = 125oC 6.0 kA VR = 0 180 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.032 o Anode dc - 0.064 o Cathode dc - 0.064 o Double side - 0.008 o Single side - 0.016 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -55 150 o Clamping force 10.8 13.2 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 12.0kN with mounting compound C/W C/W C/W C Virtual junction temperature C C kN 3/10 www.dynexsemi.com DCR820SG DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 50 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/s - 50 A/s Rate of rise of on-state current From 67% VDRM to 1000A, Gate source 10V, 5 tr 0.5s. Tj = 125oC. Repetitive 50Hz dI/dt Non-repetitive - 100 A/s IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.6 V rT On-state slope resistance At Tvj = 125oC - 3.5 m tgd Delay time VD = 67% VDRM, Gate source 20V, 10 Rise time 0.5s, Tj = 25oC - 3.3 s IL Latching current Tj = 25oC, VD = 20V. - 1 A IH Holding current Tj = 25oC, VD = 5V, IT = 5A, ITM = 500A 30 120 mA tq Turn-off time IT = 500A, tp = 1ms, Tj = 125C, VRM = 100V, dIRR/dt = 10A/s, dVDR/dt = 25V/s to 3000V 500 1200 s QS Stored charge - triangular approximation through IRR and 25% IRR IT = 320A, -dIT/dt = 6A/s 600 1500 C Typ. Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC - 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC - 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC - 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode - 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode - 0.25 V VRGM Peak reverse gate voltage - 5 V IFGM Peak forward gate current Anode positive with respect to cathode - 10 A PGM Peak gate power See Fig.8/9 Gate characteristics curves and table - 100 W PG(AV) Mean gate power - 5 W 4/10 www.dynexsemi.com DCR820SG CURVES 600 1500 Tj = 125C Tj = 125C 500 Instantaneous on-state current, IT - (A) Instantaneous on-state current, IT - (A) 1250 1000 750 500 400 300 200 100 250 0 0 1.0 2.0 3.0 4.0 5.0 6.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT 7.0 1 1.5 2.5 3 3.5 2.0 Instantaneous on-state voltage, VT - (V) 4 Fig.3 Maximum (limit) on-state characteristics Where A = -0.759775 B = 0.639225 C = 0.004376 D = -0.092153 these values are valid for Tj = 125C for IT 100A to 1500A 5/10 www.dynexsemi.com DCR820SG 800 2000 1800 700 1600 600 Power loss - (W) Power loss - (W) 1400 1200 1000 800 500 400 300 Conduction angle Conduction angle 600 180 400 200 180 120 200 120 90 60 30 90 60 100 30 15 15 0 0 0 50 100 150 200 250 300 350 0 400 50 Mean on-state current, IT(AV) - (A) Fig.4 Sine wave power dissipation curves 100 150 200 Mean on-state current, IT(AV) - (A) 250 Fig.5 Sine wave power dissipation curves 800 2000 1800 700 1600 600 1200 Power loss (W) Power loss - (W) 1400 1000 800 500 400 300 Conduction angle D.C. 600 Conduction angle D.C. 200 180 120 90 180 400 120 90 200 100 60 60 30 30 0 0 0 100 400 200 300 500 Mean on-state current, IT(AV) - (A) Fig.6 Square wave power dissipation curves 600 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 300 350 Fig.7 Square wave power dissipation curves 6/10 www.dynexsemi.com DCR820SG 10 Upper limit Lower limit 9 Gate trigger voltage, VGT - (V) 8 7 6 Table gives pulse power PGM in Watts 5 Preferred gate drive area Tj = -40C 4 Tj = 25C 3 Tj = 125C 2 Pulse Width s 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 7 8 9 1.0 Fig.8 Gate characteristics 25 Upper Limit Lower Limit 5W 10W 20W 50W 100W Gate trigger voltage, VGT - (V) 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) 10 Fig.9 Gate characteristics 7/10 www.dynexsemi.com DCR820SG 1000 10000 Peak reverse recovery current, IRR - (A) Total stored charge, QRA3 - (C) Conditions: Tj = 125C IT = 320A VR = 100V Max 1000 Min IT QRA3 dI/dt 100 0.1 1.0 Conditions: Tj = 125C IT = 320A VR = 100V Max 25% IRR IRR 10 Min 100 10 0.1 100 1.0 10 100 Rate of decay of on-state current, dI/dt - (A/s) Rate of decay of on-state current, dI/dt - (A/s) Fig.11 Reverse recovery current Fig.10 Stored charge 0.1 12.5 7.5 5 0.1 I2t 0.05 2.5 0 1 10 ms 5 1 10 0 50 Cycles at 50Hz Duration Fig.12 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125C) Thermal impedance - junction to case, Zth(j-c) - (C/W) 10 I2t value for fusing - (A2s x 106) Peak half sinewave on-state current - (kA) Anode side cooled Double side cooled 0.01 0.001 0.001 Conduction Effective thermal resistance Junction to case C/W d.c. Halfwave 3 phase 120 6 phase 60 0.01 Double side 0.032 0.034 0.044 0.057 0.1 Time - (s) Single side 0.064 0.066 0.076 0.089 1.0 10 Fig.13 Maximum (limit) transient thermal impedance - junction to case 8/10 www.dynexsemi.com DCR820SG PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6x2.0 deep (in both electrodes) Cathode tab Cathode O58.5 max O34 nom 27.0 25.4 O1.5 Gate O34 nom Anode Nominal weight: 250g Clamping force: 12kN 10% Lead lenght: 420mm Lead terminal connector: M4 ring Package outline type code: G 9/10 www.dynexsemi.com DCR820SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4224-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com