01/99 B-61
J308, J309
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ308, SMPJ309
At 25°C free air temperature: J308 J309 Process NJ72
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 1 – 1 nA VGS = – 15V, VDS = ØV
– 1 – 1 µA VGS = – 15V, VDS = ØV TA= +125°C
Gate Source Cutoff Voltage VGS(OFF) – 1 – 6.5 – 1 – 4 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 11VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 12 60 12 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 8000 17000 10000 17000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Output Conductance gos 250 250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Forward Transconductance gfg 13000 13000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Transconductance gog 150 100 µS VDS = 10V, ID= 10 mA f = 1 kHz
Gate Drain Capacitance Cdg 1.8 2.5 1.8 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz
Gate Source Capacitance Cgs 45 45pFV
DS = ØV, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 kHz
Input Noise Voltage
Common Source Forward Re(Yfs) 12 12 µS VDS = 10V, ID= 10 mA f = 105 MHz
Transconductance
Common Gate Input Conductance Re(Yig) 14 14 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Source Input Conductance Re(Yis) 0.4 0.4 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Source Output Conductance Re(Gos) 0.15 0.15 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Gate Power Gain Gpg 16 16 dB VDS = 10V, ID= 10 mA f = 105 MHz
at Noise Match 11 11 dB VDS = 10V, ID= 10 mA f = 450 MHz
Noise Figure NF 1.5 1.5 dB VDS = 15V, ID= 10 mA f = 105 MHz
2.7 2.7 dB VDS = 15V, ID= 10 mA f = 450 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-61
