MITSUBISHI RF POWER TRANSISTOR 2S8C2133 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band 24 to 28 volts operation applications. FEATURES @ High power gain: Gpe 2 8.2dB @Vc = 28V, Po = 30W, f = 220MHz Emitter ballasted construction and gold metallization for high reliability and good performances. Low thermal resistance ceramic package with flange. @ Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 28V, Po = 30W, f = 220MHz, To = 25C. @ Equivalent input series impedance: Z;, = 1.2 + j3.3Q @Vcc = 28V, Py = 30W, f = 220MHz APPLICATION 10 to 15 watts output linear power amplifiers such as TV trans- poser amplifiers in VHF band. OUTLINE DRAWING Dimensions in mm erie 10.2+0.5 1140.3 12.9MAX 18.5 40.3 25+0.6 PIN: T COLLECTOR EMITTER (FLANGE) @ Base @ EMITTER (FLANGE} FIN (EMITTER) 3.2+0.3 T-40E ABSOLUTE MAXIMUM RATINGS (To = 25C unless otherwise specified) Symbol Parameter Conditions Ratings Unit Veso Collector to base voltage 5S VegO Emitter ta base voltage 4 Vv VcEO Collector to emitter vol tage Ree =o 35 V So Collector current 5 A a Ta=25C 3.75 w Po Collector dissipation To=28 75 Ww T} Junct-on temperature 175 C Tstg Storage temperature 55 to 175 C Rth-a Junction to ambient 40 c/w Thermal resistance Rth-c Junction to case 2 "c/w Note. Above parameters are guaranteed independently. EL ECTR ICAL CHARACTER ISTICS (Tc =25C unless otherwise specified) . Limits : Symbo! Parameter Test conditions Mn To Mon Unit VipryeBo, Emitter to base breakdown voltage le =10mMA, lo =0 4 Vier)cBo; Collector to base breakdown voltage to=10mMA, le=0 55 Vier)ceo} Collector to emitter breakdown voltage Io =50mA, Rag = 35 v logo Collector cutoff current Vogp =35V, le =0 2 mA leao Emitter cutoff current Veg=3V. lco=0 1 mA re DC forward current gain * Voce =25V.1=0.2A 20 50 110 _ Po Output power - Voc =28V, Pin=4.5W, f=220MHz 30 3 76 Collector efficiency 55 60 % Note. *Pulse test, Pw=150ys, duty=5%. Above parameters, ratings, limits and conditions are subject to change NOV. 97 MITSUBISHI ELECTRIC MITSUBISHI RF POWER TRANSISTOR ~28C2133 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT f=220MHz TR 1S5pF = 4--* to 30pF - 30 L, 10 to 30pF sf Lz = 15pF Tr Ly,L3: Thickness 0.2mm copper plate L2: 100, 7T, 2P, $1.0 silver plated copper wire L,: 12D, 3T, 3P, 61.6 silver plated copper wire Ls: 10D, 15T, 61.0 enameled wire T,: 4:1 transformer Tz: 1:4 transformer F: Ferrite Sealed Bead 330pF, 1000pF, 4700pF, 0.01uF, 0.1uF, 4.7uF in parallel 330pF, 1000pF, 4700pF, O.01uF, O.1uF, 47pF in parallel TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE La Fo ls F +Voo a OL FE to 110p 2) T2 o Zout=509 SN 4 f, to 30pF Br @ 7 WT Note: D: Inner diameter of coi! T: Turn number of coil P . Pitch of coil Dimension in milli-meter COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE 75 2.5 N\ 50mA To =25'C = \ _ 2 80 < 2.0 4omA > 2 8 \ : a ING a a 4 a \ wo 45 a 7. X a ra a Cy > B a Ke D z 30 BS = 10 o of E - Ny y\ O oO + Sy, us a Sry Ss at = a 15 Zn 2 08 tg=10mA : \ : 0 0 Q 40 80 120. 160 200 0 10 20 30 40 50 AMBIENT TEMPERATURE Ta (C) COLLECTOR TO EMITTER VOLTAGE Vee (V) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. DC CURRENT GAIN VS. BASE TO EMITTER RESISTANCE COLLECTOR CURRENT 80 70 g To=28C To = 25C a 1o=50mA Vor =15V a i 70 = 60 a z =~ q a> # = 60 50 =u Gi ae o a e = 50 3 40 58 8 a 3 =5 40 30 88 ' 30 20 19 203050 100200 500 Ik 2k3k5k 10k 01 020.3 05071 #2 3 #5 710 BASE TO EMITTER RESISTANCE Ree (2) COLLECTOR CURRENT I (A) NOV. 97 MITSUBISHI ELECTRIC MITSUBISHI RF POWER TRANSISTOR 2S8C2133 NPN EPITAXIAL PLANAR TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR OUTPUT POWER, COLLECTOR TO BASE VOLTAGE EFFICIENCY VS. INPUT POWER 1000 0 100 ~ Fooh Te = 25C To =25C : 8 soot f=IMHz Voo=28Vv Po g u 40 f=220MH 80 o 2 300 = & b E 200 a z Oo x 30 60 < 8 S 100 5 it 5 70 - 20 wu & 50 > 40 2 3 z 30 5 4 Oo 10 20 2 9 20 8 a z 10 0 0 8 1 2 3 710 230 5070100 0 2 4 6 8 10 COLLECTOR TO BASE VOLTAGE Veg (V) INPUT POWER Pin (W) IN CASE AB OPERATING OUTPUT POWER VS. OUTPUT POWER COLLECTOR COLLECTOR SUPPLY VOLTAGE CURRENT VS. INPUT POWER 50 100 10 Te = 25C Jop le =25C 7 f=220MHz 50 Voo=28V 5 40 Voc=28V > lg=80mA < = ADJUSTMENT = aolf=220MH 3. 0 LY a a kr a 30 ra 20 2 Z Ww 2 c 5 S 10 1 5 5 20 5? O7 = = 5 05 5 O 3 2 g 10 3 0.3 a 2 02 9 a 1 0.1 20 22 24 26 28 30 20 24 2B 32 36 40 COLLECTOR SUPPLY VOLTAGE Vec (V} INPUT POWER Pin (dBm) INPUT IMPEDANCE VS. OUTPUT IMPEDANCE VS. FREQUENCY FREQUENCY 5 T 5 6 r 0 To =25C To =25C | | Voc = 28V Zin = Fin + jXin a Voc= 28V Zout=Rout+jXout 3 G 4h Po=30w 4 6 sf Po=30W Boor 1% Id =80 iXin ve 3 Id:=80mA Ou 3 d mA < c d m x Ww 3 w 9 4 a. _ oO 2 3 $ 2 iXout 2 2 < E < Bo E n Oo Pr q uo | < wy 2 2 w 3 5 Rin 5 z " z 2 1 A et, 5 2 ~4 5 4 = 6 3 0 0 1 5 50 100 150 200 250 50 100 150 200 250 FREQUENCY f (MHz) FREQUENCY (MHz) NOV. ' 97 MITSUBISHI ELECTRIC