fa SOD STATE INC. J 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN WITH BASE-EMITTER SPEEDUP DIODE The MJ10015 and MJ10016 darlington transistors are designed MJ10015 for high-voltage, high-speed, power switching in inductive circuits MJ10016 where fall time is critical. They are particularly suited for line oper -ated switch-mode applications such as: FEATURES: Continuous Collector Current -!, = 50A Switching Regulators 50 AMPERE *Inverters ~ + POWER DARLINGTON *Solenoid and Relay Drivers TRANSISTORS *Motor Controls 400-500 VOLTS ~ eo nag 250 WATTS MAXIMUM RATINGS Characteristic Symbol | MJ10016 MJ10016 Unit Collector-Emitter Voltage Voev 600 700 Vv Coliector-Emitter Voltage Vegoisu s) 400 500 Vv Emitter-Base Voltage Veno 8.0 Vv Collector Current-Continuous le 50 A -Peak loan 7 Base current lp 10 A 8 Total Power Dissipation @T,=25C 250 WwW o! @T,= 100C | Py 143 Ww bt atc Derate above 25C 1.43 wrc >, F Operating and Storage Junction Ty .Ts1 C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit A Thermal Resistance Junction to Case Rejc 0.7 cw PW 1.BASE 2.EMITTER COLLECTOR(CASE) FIGURE - 950 E -1 POWER DERATING on MILLIMETERS 2 225 MIN MAX < 200 A 33.75 | 30.96 z 175 B 192 | 222 Q c 796 9.28 < tos bp | 11.18 | 1219 % E | %.20 | 2667 2 100 F | 1.45 | 1.60 x 75 G 1.38 1.62 3 50 H | 2990 | 30.40 5 I 16.64 | 17.30 2 0 J 3.88 436 0 2 50 75 100 125 150 175 200 K | 1067 | 11:18 To , TEMPERATURE(? C) MJ10015, MJ10016 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (Ig = 100 MA, Ig 0, Vetamp=Rate Vegg ) MJ10015 Vegoisus) 400 Vv MJ10016 500 Collector Cutoff Current ( Vogy* Rated Value, Vagiopp)=1-5 V ) logy 0.25 mA Emitter Cutoff Current leno mA (Veg =2.0V,1,=0) 350 ON CHARACTERISTICS (1) DC Current Gain hFE (lg 220A, Vog = 5.0 V) 25 (lg = 40A, Vog = 5.0 V) 10 Collector - Emitter Saturation Voltage Vezrsat) Vv (lg =20A, Ig =1.0A) 2.2 (lg 250A, Ip = 10A) 5.0 Base - Emitter Saturation Voltage Veejeat) Vv (l,= 20A, I,=1.0A) 2.75 Diode Forward Voltage Ve Vv (lp = 20A) 5.0 DYNAMIC CHARACTERISTICS Output Capacitance Cop pF (Veg=10 V, 1,=0, f =100 kHz ) 750 SWITCHING CHARACTERISTICS Delay Time Veg = 250 V, Ip =20A ty 0.3 us Rise Time lg = 1.08, Vigeiom5.0V t, 1.0 us Storage Time tp = 25us,Duty Cycle < 2% t. 2.5 us Fall Time ty 1.0 us (1) Pulse Test: Pulse width = 300 us , Duty Cycle S 2.0% hee , DC CURRENT GAIN Ceb, OUTPUT CAPACITANCE(pF) MJ10015, MJ10016 NPN FIG-2 DC CURRENT GAIN FiG-3 COLLECTOR EMITTER SATURATION VOLTAGE V VOLTAGE (VOLTS) Tyt50C 08 1 2 5 10 20 50 Os 4.0 20 50 10 20 60 lc , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) FIG-4 OUTPUT CAPACITANCES FIG-S BASE- EMITTER SATURATION VOLTAGE E ] a 3 > T1806 on 86140 20 50 10 2 s0 100 200 400 0s 1.0 20 50 10 20 50 Vp, REVERSE VOLTAGE(VOLTS) IC , COLLECTOR CURRENT (AMP) FIG-6 COLLECTOR CUT-OFF REGION Vop=250V Tya125C 100C 73C ke, COLLECTOR CURRENT (uA) 02 0 +02 +04 +06 +08 Voe , BASE EMITTER VOLTAGE (VOLTS) . COLLECTOR CURRENT (Amp) i ie, COLLECTOR CURRENT(AMP) FIG-7 FORWARD BIAS SAFE OPERATING AREA 50 20 10 5.0 2.0 1.0 0s 02 Of T.=25C (Single Pulse) 0.05 -- Bonding Wire Limit ~~ Thermally Limited 0.02 ~ Second Breakdown Limited oot Curves Apply Below Rated Vero 1 2 5 0 20 50 100-200 500 Vee , COLLECTOR EANTTER VOLTAGE (VOLTS) FIG-8 REVERSE BIAS SAFE OPERATING AREA ial en | | TURN OFF LOAD LINE BOUNDARY FOR MJ10016 \ 40| THE LOCUS FOR MJ10015 \ 1S 100 V LESS 30 2o}-- ae 10 Vee (om = Te = 25 OL . 0 50 100 150 200 250 300 350 400 450 500 Vee ,COLLECTOR-EMITTER VOLTAGE(VOLTS) MJ10015 , MJ10016 NPN FORWARD BIAS __ There are. two limitation on the power handling ability of a (ransistor:average junction temperature and second breakdown safe operating area curves indicate 'e-Voe limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-7 is base on T.=25 C;T sey isvariable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% must be derate when Te 225C, Second breakdown limitations do not derate the same as thermal limitations. REVERSE BIAS _| For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased Under these conditions the collector voltage must be held to a safe level at or below a specfic value of collector current. This can be accomplished by several mean such as active clamping, RC snubbing, load line shaping, etc. the safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the vokage-current condition allowable during reverse biased tum-off. This tating is verified under clamped conditions so that the device is never subjected to an avalanche mode. FIG-8 gives the RBSOA haracteristics.