ee FAIRCHILD ee SEMICONDUCTOR 2N5484 2N5485 2N5486 Discrete POWER & Signal Technologies MMBF5484 MMBF5485 MMBF5486 SOT-23 s Mark: 6B / 6M /6H N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absol ute Maxi mu m Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units Voe Drain-Gate Voltage 25 Vv Ves Gate-Source Voltage - 25 Vv lor Forward Gate Current 10 mA Ty ,Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N5484 *MMBF5484 Pp Total Device Dissipation 350 225 mW Derate above 25C 2.8 1.8 mWw/eC Reuc Thermal Resistance, Junction to Case 125 C/W Rega Thermal Resistance, Junction to Ambient 357 556 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 41997 Fairchild Semiconductor Corporation 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2Electrical Characteristics N-Channel RF Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Typ | Max |Units OFF CHARACTERISTICS Vieryass Gate-Source Breakdown Voltage Ig=- 1.0 pA, Vos = 0 - 25 Vv less Gate Reverse Current Ves =- 20 V, Vos = 0 - 1.0 nA Veg = - 20 V, Vps = 0, Ta = 100C - 0.2 uA Vascot) Gate-Source Cutoff Voltage Vos = 15 V, Ip =10nA 2N5484 | -0.3 -3.0 Vv 2N5485 | -0.5 -40 Vv 2N5486 | - 2.0 - 6.0 Vv ON CHARACTERISTICS loss Zero-Gate Voltage Drain Current* Vos = 15 V, Veg = 0 2N5484 1.0 5.0 mA 2N5485 4.0 10 mA 2N5486 8.0 20 mA SMALL SIGNAL CHARACTERISTICS Gis Forward Transfer Conductance Vos = 15, Veg = 0, f = 1.0 kHz 2N5484 | 3000 6000 | umhos 2N5485 | 3500 7000 | umhos 2N5486 | 4000 8000 | umhos Revis) Input Conductance Vos = 15, Veg = 0, f = 100 MHz 2N5484 100 | umhos Vos = 15, Ves =0, f = 400 MHz 2N5485 / 2N5486 1000 | umhos Jos Output Conductance Vos = 15, Veg = 0, f = 1.0 kHz 2N5484 50 | umhos 2N5485 60 | umhos 2N5486 75 | umhos Re,Yos) Output Conductance Vos = 15, Veg = 0, f = 100 MHz 2N5484 75 | umhos Vos = 15, Ves =0, f = 400 MHz 2N5485 / 2N5486 100 | umhos Revs) Forward Transconductance Vos = 15, Veg = 0, f = 100 MHz 2N5484 | 2500 umhos Vos = 15, Ves =0, f = 400 MHz 2N5485 | 3000 umhos 2N5486 | 3500 umhos Ciss Input Capacitance Vos = 15, Veg = 0, f = 1.0 MHz 5.0 pF Ciss Reverse Transfer Capacitance Vos = 15, Veg = 0, f = 1.0 MHz 1.0 pF Coss Output Capacitance Vos = 15, Veg = 0, f = 1.0 MHz 2.0 pF NF Noise Figure Vos= 15 V, Re= 1.0 kQ, f = 100 MHz 2N5484 3.0 dB Vos= 15 V, Re= 1.0 kQ, f = 400 MHz 2N5484 4.0 dB Vos= 15 V , Re= 1.0 kQ, f = 100 MHz 2N5485 / 2N5486 2.0 dB Vos= 15 V, Re= 1.0 kQ, f = 400 MHz 2N5485 / 2N5486 4.0 dB * Pulse Test: Pulse Width 300 ms, Duty Cycle 2% 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics Vv = 15V hm T,=+25C T, =4+125C Ip- DRAIN CURRENT (mA) oo BK 2.5V 0 1 2 3 4 5 V,- GATE-SOURCE VOLTAGE(V) Transconductance Characteristics 7, J se[ Ta =-55 C | Vos, = 15V 6a SSrT, = 425C @ 3 <= E O5 =-T, = +125C Z a A < . : T, =55C 7 Bap 3 ~ h he - T,= 425C 3g 3 Cue ET, = +125C | 9 N 2 [| D9 vi a < \ V qs(orF) =-4.5V N F 1 25V mnt) 4 2 3 -4 5 Vag GATE-SOURCE VOLTAGE(V) Output Conductance vs Drain Current T,=425 C f = 1.0 kHz Vv =-5.5V nN oO V_= oa oO Vv a = Vv =-1.5V gos -- OUTPUT CONDUCTANCE (u mhos) 0.1 0.01 0.02 0.05 01 0.2 05 1 2 5 10 I, -- DRAIN CURRENT (mA) Channel Resistance vs Temperature 1000 e ~ 500 lu Z 300 a 200 on Wu oe 100 z = 50 < = 30 2 20 Vog = 100mV ~ Vv =0V 10 -50 0 50 100 150 T, * AMBIENT TEMPERATURE (C) Common Drain-Source Characteristics 5 T 7 _ fT, =+25 Ses). z aa nN E APTYP. V ggorr) =-5:0V AS | RY 3 2 oO = Z2 a a iy a 0 0 0.2 0.4 0.6 0.8 1 Vag - DRAIN-SOURCE VOLTAGE(V) Transconductance Parameter Interactions =~ _~ a c a3 a GF gfs, loss @V os =15V, V cs =0 PULSE 108 < 9 lps @ Vp= 100mV, V .,= 0 50 E = | = 3062 a 2w a = [|] aq Foe Fra o5 . = 10 20 & = Sz 5 8a z = Bo 2 8 3) Q 20 2 R : Vasiorr) @ Vag= 15V, | p= nA r B wo 210 | | | | | | | 1 o 41 -2 -3 -5 -7 -10 D> Vie GATE-SOURCE VOLTAGE(V) 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2N-Channel RF Amplifier (continued) Typical Characteristics (continued) Transconductance vs Noise vs F Drain Current Voc. =.15V @ 49 > Few=6.0Hz@f=10Hz, 100Hz < Vago) =~ 1.5V f@f>1.0 E 5 T, =-55C = W T,=+25C = < T, =4125C W 9 = a 1 a 3 > |, = 0.5 mA 0.5 w 10 ao 4 25 = 2 I= 3mA F o bor 0.02 0.05 0.1 02 O85 1 2 5 10 1 | - DRAIN CURRENT (mA) 0.01 0.03 Of 0.3 1 3 10 30 100 D f -- FREQUENCY (kHz) Capacitance vs Voltage Noise Figure Frequency 5 f = 0.1 -1.0MHz s ~ m4 WW oS 3 Wy z C .AVGY = 15% V) ra e 23 5 S < L a c.(V. =0V) W S g 2 ~ 2 2 1 2 | 2 Oo 0 0 5 10 5 -20 10 20 30 50 100 200300 500 1000 Vag-- GATE-SOURCE VOLTAGE(V) f -- FREQUENCY (MHz) Power Dissipation vs Ambient Temperature 350 Ww) > 4=2 MY w oa 8 a 8 So 6 6 6 6 oa oO Po - POWER DISSIPATION (m' Oo 0 25 50 75 100 125 150 TEMPERATURE (C) 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2N-Channel RF Amplifier (continued) Common Source Characteristics Input Admittance = oO V ng = 15V Vos =0 (cS) on Yis-~ INPUT ADMITTANCE (mmhos) 100 200 300 500 700 f -- FREQUENCY (MHz) 1000 Forward Transadmittance o oO o Yiss-- FORWARD TRANSFER (mmhos) 100 200 300 500 700 f -- FREQUENCY (MHz) 1000 al E Ww o a Fe oO 2 a 2 9 o | & 5 V Ds Ves tg |_(cs) >? 100 oO ao -- REVERSE TRANSFER (mmbhos) rss Y 100 Output Admittance = 15V | 200 300 500 700 f - FREQUENCY (MHz) 1000 Reverse Transadmittance 200 300 500 700 f -- FREQUENCY (MHz) 1000 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2N-Channel RF Amplifier (continued) Common Gate Characteristics Admittance -- INPUT ADMITTANCE (mmhos) Ygs 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Forward Transadmittance FORWARD TRANSFER (mmbhos) Yigs = 100 200 300 500 700 1000 f -- FREQUENCY (MHz) Yogs- OUTPUT CONDUCTANCE (mmhos) -- REVERSE TRANSFER (mmhos) igs Y Output Admittance 200 300 500 700 1000 f -- FREQUENCY (MHz) Reverse Transadmittance 200 300 500 700 1000 f -- FREQUENCY (MHz) 98PSAEWNW / S8VSAGWIW / P8vSAdIWNWN / 980SNc / S8USN / P8VSN2TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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